Nitride semiconductor device and a process of manufacturing the same
    141.
    发明授权
    Nitride semiconductor device and a process of manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US06876009B2

    公开(公告)日:2005-04-05

    申请号:US10314444

    申请日:2002-12-09

    Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

    Abstract translation: 包含形成在不同基板上的氮化镓系半导体层的氮化物半导体器件的发光效率提高。 形成在基板上的缓冲层形成在其间的n型层包括沿纵向观察的凹凸部的一部分。 有源层形成在凸起的至少两个侧面上,凹部位于它们之间。 在凹部内形成p型层。 绝缘层形成在突起的顶面上,在凹部的底面上。 n型层设置有n电极,而p型层设置有p电极接触层。 从形成在氮化镓系半导体层的凹部内的p型层观察,有源层和n型层位于彼此相反的关系。 从凹部的侧面观察,在n型层上形成有源层和p型层。

    Strip loaded waveguide with low-index transition layer
    142.
    发明授权
    Strip loaded waveguide with low-index transition layer 有权
    带载波导与低折射率过渡层

    公开(公告)号:US06834152B2

    公开(公告)日:2004-12-21

    申请号:US10241284

    申请日:2002-09-09

    Abstract: A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

    Abstract translation: 条带加载波导包括板坯和条带,其中条带与板坯分离。 然而,提供了用于传播光学模式的引导区域,并且该引导区域在条带和板块内均延伸。 具有低于带材和板坯折射率的折射率的材料层可以设置在条带和板坯之间并分离。 在一个实施例中,板坯包括晶体硅,条带包括多晶硅或晶体硅,并且其间的材料层包括二氧化硅。 这样的波导可以在与晶体管相同的衬底上形成。 这些波导也可以被电偏置以改变波导的折射率和/或吸收。

    Compact electrically and optically pumped multi-wavelength nanocavity laser, modulator and detector arrays and method of making the same
    143.
    发明授权
    Compact electrically and optically pumped multi-wavelength nanocavity laser, modulator and detector arrays and method of making the same 有权
    紧凑的电和光泵浦多波长纳米腔激光器,调制器和检测器阵列及其制造方法

    公开(公告)号:US06804283B2

    公开(公告)日:2004-10-12

    申请号:US10044502

    申请日:2002-01-10

    Applicant: Axel Scherer

    Inventor: Axel Scherer

    Abstract: A compact, electrically and optically pumped multi-wavelength nanocavity laser, modulator and detector array uses lithography to define the precise spectral response of each element. High fields are applied within optical nanocavities to take advantage of photonic crystals filled with nonlinear materials. These nonlinearities and high fields are used to define tunable nanocavity lasers, detectors, routers, gates and spectrometers for wavelength and time division multiplexing applications. Similarly, nanofabricated optical waveguides can be used for efficient coupling of light between devices. The lithographic control over the wavelength and polarization supported within photonic crystal cavities is used to construct compact nanophotonic laser and detector arrays, and all-optical gates and routers. The photonic crystal couples light emitted by one cavity, and uses it to optically pump another with negligible diffraction losses. The emission wavelength of light from these photonic crystal lasers can be varied by simple adjustments of the lithographic pattern during their fabrication.

    Abstract translation: 紧凑,电和光泵浦多波长纳米腔激光器,调制器和检测器阵列使用光刻来定义每个元件的精确光谱响应。 在光学纳米结构中应用高场,以利用填充有非线性材料的光子晶体。 这些非线性和高场用于波长和时分复用应用的可调谐纳米腔激光器,检测器,路由器,门和光谱仪。 类似地,纳米制造的光波导可以用于器件之间的光的有效耦合。 在光子晶体腔内支持的波长和极化的光刻控制用于构建紧凑型纳米光子激光和检测器阵列,以及全光栅和路由器。 光子晶体耦合由一个空腔发出的光,并将其用于以可忽略的衍射损耗光学泵浦另一个。 来自这些光子晶体激光器的光的发射波长可以通过在其制造期间对光刻图案的简单调整而改变。

    Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby
    144.
    发明授权
    Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby 失效
    基于二维光子晶体结构的光学器件的制造和由此制造的器件

    公开(公告)号:US06468823B1

    公开(公告)日:2002-10-22

    申请号:US09675796

    申请日:2000-09-29

    CPC classification number: B82Y20/00 G02B6/1225 G02B2006/12078

    Abstract: A broad class of devices, both active and passive, such as waveguides, microcavities, filters, resonators, lasers, switches, modulators, etc. can be fabricated using the disclosed method. The method is one in which nanocavities in semiconductor membranes can be fabricated, which method is an advantage regardless of the type of device which is ultimately being fabricated therefrom. The method of the invention is illustrated in the case of a photonic crystals waveguide as being made in a silicon-on-insulator (SOI) material. However, the method is not limited to this type of material and can be used in other equivalent material structures such as AlGaAs, InGaAsP, or the like. The semiconductor membranes which are fabricated incorporate two dimensional photonic crystals for confinement of light in the lateral or in-plane direction and total internal reflection for the confinement in vertical direction.

    Abstract translation: 使用所公开的方法可以制造诸如波导,微腔,滤波器,谐振器,激光器,开关,调制器等的主要和被动的多种器件。 该方法是可以制造半导体膜中的纳米孔的方法,无论最终由其制造的器件的类型如何,该方法是有利的。 在绝缘体上硅(SOI)材料中制造光子晶体波导的情况下,示出了本发明的方法。 然而,该方法不限于这种类型的材料,并且可以用于其它等效材料结构,例如AlGaAs,InGaAsP等。 所制造的半导体膜包含二维光子晶体,用于在侧向或面内方向上限制光,并在垂直方向上包含全内反射。

    Semiconductor surface lenses and shaped structures
    145.
    发明授权
    Semiconductor surface lenses and shaped structures 失效
    半导体表面透镜和成形结构

    公开(公告)号:US06215134B1

    公开(公告)日:2001-04-10

    申请号:US09075744

    申请日:1998-05-08

    CPC classification number: H01L33/20

    Abstract: A lens is formed out of semiconductor material. The semiconductor produces light which is coupled to the lens. The lens focuses the light and also minimizes refractive reflection. The lens is formed by a graded aluminum alloy, which is oxidized in a lateral direction. The oxidation changes the effective shape of the device according to the grading.

    Abstract translation: 透镜由半导体材料形成。 半导体产生耦合到透镜的光。 镜头对光线进行聚焦,并且还可以减少折射反射。 透镜由横向氧化的渐变铝合金形成。 氧化根据分级改变装置的有效形状。

    Hybrid aligned liquid crystal display employing An anodized alignment
layer and method for fabrication
    147.
    发明授权
    Hybrid aligned liquid crystal display employing An anodized alignment layer and method for fabrication 失效
    使用阳极氧化取向层的混合取向液晶显示器及其制造方法

    公开(公告)号:US5880801A

    公开(公告)日:1999-03-09

    申请号:US612382

    申请日:1996-03-07

    Abstract: The present invention discloses nanomechanical fabrication methods of hybrid aligned nematic (HAN) cells of liquid crystals for creating analog spatial light modulators and smart pixel arrays on conventionally fabricated VLSI integrated circuits. The liquid crystal material is encapsulated between a top substrate and a bottom substrate. The locally averaged direction of the long axis of the molecules of liquid crystals of the HAN cells varies smoothly from homogeneous alignment on a top substrate to homeotropic alignment on a bottom substrate. The bottom substrate causes a homeotropic alignment of the liquid crystal because of its porous microstructure.

    Abstract translation: 本发明公开了用于在常规制造的VLSI集成电路上创建模拟空间光调制器和智能像素阵列的液晶的混合排列向列(HAN)单元的纳米机械制造方法。 液晶材料被封装在顶部基底和底部基底之间。 HAN单元的液晶分子的长轴的局部平均方向从顶部基板上的均匀取向到底部基板上的垂直取向平滑地变化。 由于其多孔微结构,底部底物引起液晶的垂直取向。

    Surface emitting semiconductor laser
    148.
    发明授权
    Surface emitting semiconductor laser 失效
    表面发射半导体激光器

    公开(公告)号:US4949350A

    公开(公告)日:1990-08-14

    申请号:US380996

    申请日:1989-07-17

    Abstract: A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam itching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

    Abstract translation: 垂直腔表面发射激光器及其制造方法,其中III-V异质结构外延生长以包括由量子阱区域的发射波长分隔的两个干涉镜之间的量子阱有源区。 通过化学辅助的氙离子束瘙痒蚀刻该异质结构的小柱。 在蚀刻之前,在外延半导体上沉积顶部金属接触。 光通过具有大于量子阱区的带隙的衬底发射。

    Integrated passive iron shims in silicon
    149.
    发明授权
    Integrated passive iron shims in silicon 有权
    硅中集成的被动铁垫片

    公开(公告)号:US09401240B2

    公开(公告)日:2016-07-26

    申请号:US13037365

    申请日:2011-03-01

    Abstract: A magnetic apparatus having at least one magnetic shim situated between faces of two permanent magnets. The magnetic shim helps to make the magnetic field that is accessible between the two permanent magnets a more uniform field. The magnetic shim is constructed on a thinned semiconductor wafer, such as silicon, by photolithographically defining locations on the wafer where magnetic material, such as iron or iron-nickel materials, are deposited. The shim can additional have photolihographically defined coil regions, in which conductive material such as copper can be deposited. Current contacts are provided to allow currents to be passed through the coil regions. Protective layers can be deposited to protect the deposited metals from mechanical or environmental damage.

    Abstract translation: 一种具有位于两个永磁体的表面之间的至少一个磁性垫片的磁性装置。 磁性垫片有助于使两个永磁体之间可访问的磁场具有更均匀的磁场。 通过光刻地限定晶片上存在诸如铁或铁镍材料的磁性材料的位置,在薄的半导体晶片(例如硅)上构造磁垫片。 垫片可以另外具有光学定义的线圈区域,其中可以沉积诸如铜的导电材料。 提供电流触点以允许电流通过线圈区域。 可以沉积保护层以保护沉积的金属免受机械或环境损害。

    Handheld low pressure mechanical cell lysis device with single cell resolution
    150.
    发明授权
    Handheld low pressure mechanical cell lysis device with single cell resolution 有权
    手持式低压机械细胞裂解装置,具有单细胞分辨率

    公开(公告)号:US09365816B2

    公开(公告)日:2016-06-14

    申请号:US13230933

    申请日:2011-09-13

    CPC classification number: C12M47/06 C12N1/066

    Abstract: Apparatus and methods for mechanical cell lysis with single cell resolution which requires very low applied pressure. The device can be handheld, simple to operate, requires no external power except for hand-applied pressure via a syringe, and is applicable to all cell types including yeast and bacterial cells. The device is also capable of mechanically lysing a single cell. A single cell is selected from a biological sample of interest. The single cell is lysed by application of mechanical stress in a single cell lysing apparatus having a trap structure for deterministically capturing the cell and a stress raiser that cooperates with a source of mechanical stress so as to apply sufficient force to rupture a cell. The stress raiser can be a properly designed edge of the trap or it can be a lithographically produced structure such as a nanoblade or a nanopillar.

    Abstract translation: 用于单细胞分辨率的机械细胞裂解的装置和方法,其需要非常低的施加压力。 该装置可以是手持式的,操作简单,除了通过注射器的手动施加的压力外,不需要外部功率,并且适用于包括酵母和细菌细胞在内的所有细胞类型。 该装置还能够机械裂解单个电池。 从感兴趣的生物样品中选择单个细胞。 单细胞通过在具有用于确定性捕获细胞的捕获结构的单细胞裂解装置中施加机械应力而裂解,并且应力提升器与机械应力源协作以施加足够的力使细胞破裂。 应力提升器可以是陷阱的适当设计的边缘,或者它可以是光刻产生的结构,例如纳米颗粒或纳米柱。

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