Abstract:
The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.
Abstract:
A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.
Abstract:
A compact, electrically and optically pumped multi-wavelength nanocavity laser, modulator and detector array uses lithography to define the precise spectral response of each element. High fields are applied within optical nanocavities to take advantage of photonic crystals filled with nonlinear materials. These nonlinearities and high fields are used to define tunable nanocavity lasers, detectors, routers, gates and spectrometers for wavelength and time division multiplexing applications. Similarly, nanofabricated optical waveguides can be used for efficient coupling of light between devices. The lithographic control over the wavelength and polarization supported within photonic crystal cavities is used to construct compact nanophotonic laser and detector arrays, and all-optical gates and routers. The photonic crystal couples light emitted by one cavity, and uses it to optically pump another with negligible diffraction losses. The emission wavelength of light from these photonic crystal lasers can be varied by simple adjustments of the lithographic pattern during their fabrication.
Abstract:
A broad class of devices, both active and passive, such as waveguides, microcavities, filters, resonators, lasers, switches, modulators, etc. can be fabricated using the disclosed method. The method is one in which nanocavities in semiconductor membranes can be fabricated, which method is an advantage regardless of the type of device which is ultimately being fabricated therefrom. The method of the invention is illustrated in the case of a photonic crystals waveguide as being made in a silicon-on-insulator (SOI) material. However, the method is not limited to this type of material and can be used in other equivalent material structures such as AlGaAs, InGaAsP, or the like. The semiconductor membranes which are fabricated incorporate two dimensional photonic crystals for confinement of light in the lateral or in-plane direction and total internal reflection for the confinement in vertical direction.
Abstract:
A lens is formed out of semiconductor material. The semiconductor produces light which is coupled to the lens. The lens focuses the light and also minimizes refractive reflection. The lens is formed by a graded aluminum alloy, which is oxidized in a lateral direction. The oxidation changes the effective shape of the device according to the grading.
Abstract:
A semiconductor light-emitting device having an optical cavity with a fiber grating. A vertical-cavity-surface-emitting laser can be constructed to produce single-mode tunable laser oscillation and signal wavelength conversion.
Abstract:
The present invention discloses nanomechanical fabrication methods of hybrid aligned nematic (HAN) cells of liquid crystals for creating analog spatial light modulators and smart pixel arrays on conventionally fabricated VLSI integrated circuits. The liquid crystal material is encapsulated between a top substrate and a bottom substrate. The locally averaged direction of the long axis of the molecules of liquid crystals of the HAN cells varies smoothly from homogeneous alignment on a top substrate to homeotropic alignment on a bottom substrate. The bottom substrate causes a homeotropic alignment of the liquid crystal because of its porous microstructure.
Abstract:
A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam itching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.
Abstract:
A magnetic apparatus having at least one magnetic shim situated between faces of two permanent magnets. The magnetic shim helps to make the magnetic field that is accessible between the two permanent magnets a more uniform field. The magnetic shim is constructed on a thinned semiconductor wafer, such as silicon, by photolithographically defining locations on the wafer where magnetic material, such as iron or iron-nickel materials, are deposited. The shim can additional have photolihographically defined coil regions, in which conductive material such as copper can be deposited. Current contacts are provided to allow currents to be passed through the coil regions. Protective layers can be deposited to protect the deposited metals from mechanical or environmental damage.
Abstract:
Apparatus and methods for mechanical cell lysis with single cell resolution which requires very low applied pressure. The device can be handheld, simple to operate, requires no external power except for hand-applied pressure via a syringe, and is applicable to all cell types including yeast and bacterial cells. The device is also capable of mechanically lysing a single cell. A single cell is selected from a biological sample of interest. The single cell is lysed by application of mechanical stress in a single cell lysing apparatus having a trap structure for deterministically capturing the cell and a stress raiser that cooperates with a source of mechanical stress so as to apply sufficient force to rupture a cell. The stress raiser can be a properly designed edge of the trap or it can be a lithographically produced structure such as a nanoblade or a nanopillar.