公开(公告)号：US20130183496A1

公开(公告)日：2013-07-18

申请号：US13730354

申请日：2012-12-28

Applicant: Isamu NIKI ,  Motokazu YAMADA ,  Masahiko SANO ,  Shuji SHIOJI

Inventor： Isamu NIKI ,  Motokazu YAMADA ,  Masahiko SANO ,  Shuji SHIOJI

IPC: H01L33/26

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

公开(公告)号：US08344403B2

公开(公告)日：2013-01-01

申请号：US12827677

申请日：2010-06-30

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L32/00

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：US08299486B2

公开(公告)日：2012-10-30

申请号：US12827486

申请日：2010-06-30

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/02

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：US20100267181A1

公开(公告)日：2010-10-21

申请号：US12827634

申请日：2010-06-30

Applicant: Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/02

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：US20100264446A1

公开(公告)日：2010-10-21

申请号：US12827646

申请日：2010-06-30

Applicant: Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/44 ,  H01L29/06

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：US08344402B2

公开(公告)日：2013-01-01

申请号：US12827646

申请日：2010-06-30

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/00

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

公开(公告)号：US08227280B2

公开(公告)日：2012-07-24

申请号：US12827634

申请日：2010-06-30

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/02

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

公开(公告)号：US08148744B2

公开(公告)日：2012-04-03

申请号：US12827665

申请日：2010-06-30

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/42

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：US20100264445A1

公开(公告)日：2010-10-21

申请号：US12827486

申请日：2010-06-30

Applicant: Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/02 ,  B32B5/00

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

公开(公告)号：US20050001227A1

公开(公告)日：2005-01-06

申请号：US10897163

申请日：2004-07-23

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract translation: 在半导体发光器件中稳定地确保高的外部量子效率。 在基板的表面部分上形成至少一个凹部和/或突出部分，用于散射或衍射在发光区域中产生的光。 凹部和/或突出部分具有防止在半导体层中发生晶体缺陷的形状。