Abstract:
A wafer processing system (12) including a processing chamber (18), a low pressure pump (22) coupled to the processing chamber (18) for pumping noble and non-noble gases, a valve mechanism (52) coupling a source of noble gas (54) to the processing chamber (18), an in situ getter pump (32) disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber (18), and a processing mechanism for processing a wafer (40) disposed within the processing chamber (18). Preferably, the in situ getter pump (32) can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer (36) is used to automatically control the temperature of the getter pump (32) to control the species of gasses that are pumped from the chamber. An alternate embodiment of the invention includes an in situ getter pump (178) additionally provided within the transfer chamber (42) of the semiconductor manufacturing equipment.
Abstract:
A horizontal vacuum extrusion line includes a fixed bulkhead (23), a die (24) inside the bulkhead, a telescoping vacuum chamber section (27) and a fixed chamber section (28, 29). A dam (33) in the fixed section forms a pond (72) for immersion cooling of the extrudate. A truss (35) extends from the dam to the bulkhead supporting, shaping and calibration equipment and extends through the telescoping section. Fluid pressurizable seals at each end of the telescoping section are operable after the telescoping section is closed against the bulkhead and the telescoping and fixed sections are locked together. The telescoping section provides a more compact line and easier access to the complex equipment downstream of the die. The extrudate from the die passes down into the pond (72) and then through an orifice (74) in a hood (75) projecting from the chamber into a lower level portion of the pond (78) exposed to atmosphere. The hood also includes a tractor drive (88) to push the extrudate through the underwater orifice. The hood and its contents are accessible through the atmospheric pond. A tractor haul-off and the tractor drive in the hood are the only extrudate drives between the calibration equipment and atmosphere. The higher level of the pond (72) within the chamber downstream of the dam is controlled by a valve in turn controlling the output of a pump. The valve control senses the pond level and operates independently of the vacuum controls.
Abstract:
A pressure-tight vacuum chamber in an electron beam engraving machine for receiving the printing rolls which are to be engraved, comprising a machine bed lower portion, a pressure-tight vacuum hood placed over the lower part, which is shaped in the form of a barrel-like arch and is placed on a sealing lip which surrounds the lower part on its upper rim, a loading aperture for the printing roll arranged in the upper central region of the hood, extending in the longitudinal direction of the hood, a cover which can be lowered into the loading aperture and forming a seal with the latter, and lifting and transport equipment arranged at the front ends and loading aperture, with which the cover can be lifted from its closed position and can be moved on the outer periphery of the hood in the direction of the periphery, clearing the opening, and can be moved back from the open position across the aperture and lowered into the closed position.
Abstract:
An exemplary apparatus facilitates the formation of carbon nanotubes with desired tip structures. The apparatus includes a reaction chamber including a gas outlet, and an evacuation device. The reaction chamber is configured for receiving a catalyst from which the carbon nanotubes grow and providing an environment for growing the carbon nanotubes. The evacuation device includes an intake connected with the gas outlet. The evacuation device is configured for reducing an inner pressure in the reaction chamber and inducing the formation of carbon nanotubes with desired tip structures. Methods for synthesizing carbon nanotubes with desired tip structures are also provided.
Abstract:
PROBLEM TO BE SOLVED: To provide a process chamber capable of withstanding high temperature, low pressure processes, and having improved wafer temperature uniformity and gas flow characteristics. SOLUTION: The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between biconvex upper and lower walls 12, 14. A central horizontal support plate 40 is provided between two lateral side rails 16, 18 of the chamber. The support plate segregates the process chamber into an upper region and a lower region 66, 68, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring surrounds the susceptor and is constructed of a material absorbing heat at an efficiency higher than the case of the chamber walls. A gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer. COPYRIGHT: (C)2008,JPO&INPIT