公开(公告)号：JP2007127130A

公开(公告)日：2007-05-24

申请号：JP2007004790

申请日：2007-01-12

Applicant: Saes Pure Gas Inc ,  セイス ピュア ガス インコーポレイテッド

Inventor： LORIMER D ARCY H ,  KRUEGER GORDON P

IPC: F04B37/02 ,  C23C14/54 ,  C23C14/56 ,  F04B37/08 ,  F04B37/14 ,  F04B37/16 ,  H01L21/02 ,  H01L21/20

CPC classification number: C23C14/564 ,  C23C14/54 ,  C23C14/56 ,  F04B37/02 ,  F04B37/08

Abstract: PROBLEM TO BE SOLVED: To provide an in situ getter pump having a heating device to selectively discharge different non-noble gases at different temperatures.
SOLUTION: A wafer processing system includes: a processing chamber; a low pressure pump coupled to the processing chamber for pumping noble gas out of the processing chamber; a valve mechanism coupling a source of noble gas to the processing chamber; the in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber; and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有加热装置的原位吸气泵，以选择性地在不同温度下排放不同的非惰性气体。 晶片处理系统包括：处理室; 耦合到所述处理室的低压泵，用于将稀有气体从所述处理室中排出; 将惰性气体源连接到处理室的阀机构; 设置在处理室内的原位吸气泵在惰性气体流入室内时泵送某些非惰性气体; 以及处理设置在处理室内的晶片的处理机构。 优选地，原位吸气泵可以在多个不同温度下操作，以在这些温度下优先泵送不同种类的气体。 气体分析仪用于自动控制吸气泵的温度，以控制从腔室泵送的气体种类。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO9848168A3

公开(公告)日：2000-02-24

申请号：PCT/US9807459

申请日：1998-04-15

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  KRUEGER GORDON P

IPC: B01D53/04 ,  B01J3/00 ,  B01J3/02 ,  C23C14/54 ,  C23C14/56 ,  F04B37/02 ,  H01L21/00 ,  H01L21/203 ,  H01L21/677 ,  C23C16/00 ,  H01J9/39

CPC classification number: H01L21/67109 ,  B01D53/04 ,  B01D53/0446 ,  B01D2257/108 ,  B01D2257/80 ,  B01D2258/0216 ,  B01D2259/416 ,  B01J3/006 ,  C23C14/564 ,  F04B37/02 ,  H01L21/67017 ,  H01L21/6719

Abstract: A wafer processing system (12) including a processing chamber (18), a low pressure pump (22) coupled to the processing chamber (18) for pumping noble and non-noble gases, a valve mechanism (52) coupling a source of noble gas (54) to the processing chamber (18), an in situ getter pump (32) disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber (18), and a processing mechanism for processing a wafer (40) disposed within the processing chamber (18). Preferably, the in situ getter pump (32) can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer (36) is used to automatically control the temperature of the getter pump (32) to control the species of gasses that are pumped from the chamber. An alternate embodiment of the invention includes an in situ getter pump (178) additionally provided within the transfer chamber (42) of the semiconductor manufacturing equipment.

Abstract translation: 一种晶片处理系统（12），包括处理室（18），耦合到用于泵送贵重和非贵重气体的处理室（18）的低压泵（22），耦合高贵源的阀机构（52） 气体（54）到处理室（18），设置在处理室内的原位吸气泵（32），其在惰性气体流入室（18）期间泵送某些非惰性气体，以及处理机构 用于处理设置在处理室（18）内的晶片（40）。 优选地，原位吸气泵（32）可以在多个不同温度下操作，以在这些温度下优先泵送不同种类的气体。 气体分析器（36）用于自动控制吸气泵（32）的温度以控制从室泵送的气体种类。 本发明的替代实施例包括另外设置在半导体制造设备的传送室（42）内的原位吸气泵（178）。

公开(公告)号：WO9919049A3

公开(公告)日：1999-08-19

申请号：PCT/US9821071

申请日：1998-10-06

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  APPLEGARTH CHARLES H

IPC: B01D53/04 ,  B01D53/30 ,  B01D53/34 ,  C23C16/44 ,  H01L21/00

CPC classification number: C23C16/45561 ,  B01D53/0423 ,  B01D53/0438 ,  B01D53/0446 ,  B01D53/0454 ,  B01D53/30 ,  B01D53/346 ,  B01D2253/25 ,  B01D2256/18 ,  B01D2257/108 ,  B01D2258/0216 ,  C23C16/4402

Abstract: A semiconductor manufacturing system (10) includes a getter-based gas purifier (12) with a safety device coupled in flow communication with a gas distribution network (16) for a semiconductor fabrication facility. The gas distribution network (16) supplies purified gas to at least one wafer processing chamber (18a-e) in the semiconductor fabrication facility. The getter-based gas purifier (12) with a safety device includes a getter column (20) having a sacrificial getter bed (40) disposed therein. In one embodiment the getter column (20) includes a gas inlet blocking device (22) disposed therein, with the gas inlet blocking device (22) having a sacrificial getter bed (40) disposed therein. In other embodiments the getter column (20) inlcudes sacrificial getter bed (40) and a porous member (38 or 46) disposed above a primary getter bed (32) disposed within the getter column. The gas inlet blocking device preferably includes a housing (36), a sacrificial getter bed (40), and a porous metallic support (38) that supports the sacrificial getter bed (40) with the housing (36). A high melting point, nonmetallic liner (42) separates the sacrificial getter bed (40) from the housing (36). In an alternative embodiment, the gas inlet blocking device (22) includes a porours ceramic support (46) and a layer of a meltable material (48), e.g. stainless steel shot, is disposed between the sacrificial getter bed (40) and the porous ceramic support (46). A method of protecting a getter column and a method of making an integrated circuit device are also described.

Abstract translation: 半导体制造系统（10）包括基于吸气剂的气体净化器（12），其具有与用于半导体制造设备的气体分配网络（16）流动连通的安全装置。 气体分配网络（16）向半导体制造设备中的至少一个晶片处理室（18a-e）供应净化气体。 具有安全装置的基于吸气剂的气体净化器（12）包括具有设置在其中的牺牲吸气床（40）的吸气塔（20）。 在一个实施例中，吸气塔（20）包括设置在其中的气体入口阻挡装置（22），气体入口阻挡装置（22）具有设置在其中的牺牲吸气床（40）。 在其它实施例中，吸气塔（20）包括设置在吸气剂塔内的主吸气床（32）上方的牺牲吸气床（40）和多孔构件（38或46）。 气体入口阻挡装置优选地包括壳体（36），牺牲吸气剂床（40）和用壳体（36）支撑牺牲吸气床（40）的多孔金属支撑件（38）。 高熔点非金属衬套（42）将牺牲吸气剂床（40）与壳体（36）分离。 在替代实施例中，气体入口阻塞装置（22）包括多孔陶瓷支撑件（46）和一层可熔材料（48）。 不锈钢射击设置在牺牲吸气床（40）和多孔陶瓷支撑件（46）之间。 还描述了保护吸气剂柱的方法和制造集成电路器件的方法。

公开(公告)号：WO9617171A3

公开(公告)日：1996-10-24

申请号：PCT/US9515598

申请日：1995-11-30

Applicant: SAES PURE GAS INC

Inventor： KRUEGER GORDON P ,  LORIMER D ARCY H ,  CARELLA SERGIO ,  CONTE ANDREA

IPC: C23C14/54 ,  C23C14/56 ,  F04B37/02 ,  F04B37/08 ,  F04B37/14 ,  F04B37/16 ,  H01J9/38 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20

CPC classification number: C23C14/54 ,  C23C14/56 ,  C23C14/564 ,  F04B37/02 ,  F04B37/08

Abstract: A getter pump module includes a number of getter disks provided with axial holes, and a heating element which extends through the holes to support and heat the getter disks. The getter disks are preferably solid, porous, sintered getter disks that are provided with a titanium hub that engages the heating element. A thermally isolating shield is provided to shield the getter disks from heat sources and heat sinks within the chamber, and to aid in the rapid regeneration of the getter disks. In certain embodiments of the present invention, the heat shields are fixed, and in other embodiments the heat shield is movable. In one embodiment, a focus shield is provided to reflect thermal energy to the getter material from an external heater element and provide high pumping speeds. An embodiment of the present invention also provides for a rotating getter element to enhance getter material utilization.

Abstract translation: 吸气泵模块包括设置有轴向孔的多个吸气盘，以及延伸穿过孔以加热吸气盘的加热元件。 吸气盘优选是固体，多孔，烧结的吸气剂盘，其具有与加热元件接合的钛毂。 提供了一种隔热屏蔽件，用于屏蔽吸气剂盘从室内的热源和散热器，并帮助吸气剂盘的快速再生。 在本发明的某些实施例中，隔热罩是固定的，并且在其它实施例中，隔热罩是可移动的。 在一个实施例中，提供聚焦屏蔽以将来自外部加热器元件的吸热材料的热能反射并提供高的泵送速度。 本发明的一个实施方案还提供了一种旋转吸气剂元件以增强吸气剂材料的利用。

公开(公告)号：AT239107T

公开(公告)日：2003-05-15

申请号：AT95939686

申请日：1995-10-30

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  KRUEGER GORDON P

IPC: C23C14/54 ,  C23C14/56 ,  F04B37/02 ,  F04B37/08 ,  F04B37/16 ,  H01L21/02 ,  H01L21/20 ,  H01L21/00 ,  C01B23/00

Abstract: A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealing the chamber, flowing a noble gas into the chamber while simultaneously pumping the chamber with an external low pressure pump and with an in situ getter pump disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.

公开(公告)号：ES2171044T3

公开(公告)日：2002-08-16

申请号：ES98953367

申请日：1998-10-06

Applicant: SAES PURE GAS INC

Inventor： SUCCI MARCO ,  VERGANI GIORGIO ,  LORIMER D ARCY H

IPC: B01D53/04 ,  B01D53/30 ,  B01D53/34 ,  B01D53/81 ,  C23C16/44

Abstract: A gas purification system includes a gas purification unit and one or more safety devices. The gas purification unit includes an enclosure containing a purification material that exhibits an exothermic reaction when exposed to certain gas contaminants. The gas purification unit also has an inlet coupled to an unpurified gas inlet line and an outlet coupled to a purified gas outlet line. A safety device can be coupled either to the unpurified gas input line or the purified output line, or both, and develops an alarm signal when gas contaminants exceed a given concentration level for a period of time.

公开(公告)号：CA2250453A1

公开(公告)日：1997-10-02

申请号：CA2250453

申请日：1997-03-25

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H

IPC: B01D8/00 ,  F04B37/02 ,  F04B37/08 ,  F04B37/16

Abstract: A combination cryopump/getter pump (50) including a cryopump section (52) having a cryopump inlet (76), a getter pump section (54) having a getter pump inlet (86), and a mechanism (60) for coupling the cryopump section (52) and the getter pump section (54) to a single port (58) of a process chamber to be evacuated. Preferably, a cylindrical getter pump section (54) surrounds a cylindrical cryopump section (52). Preferably, the cryopump section (52) and the getter pump section (54) are coupled to the common port (58) of the process chamber by a gate valve mechanism (60). In one embodiment, the gate valve mechanism (60) isolates the cryopump inlet (76) and the getter pump inlet (86) when in a closed position. In another embodiment, the gate valve mechanism (60) does not isolate the cryopump inlet (76) and the getter pump inlet (86) when in a closed position. Preferably, thermal insulation (78) is provided between the getter pump section (54) and the cryopump section (52) to thermally isolate the two sections. The cryopump section preferably includes both a 15 ~K array (72) and an 80 ~K array (70a-d).

公开(公告)号：CA2203904A1

公开(公告)日：1996-05-09

申请号：CA2203904

申请日：1995-10-30

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  KRUEGER GORDON P

IPC: C23C14/54 ,  C23C14/56 ,  F04B37/02 ,  F04B37/08 ,  F04B37/16 ,  H01L21/02 ,  H01L21/20 ,  H01L21/00

Abstract: A wafer processing system including a processing chamber, a low pressure pum p coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certa in non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gases that are pump ed from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealin g the chamber, flowing a noble gas into the chamber while simultaneously pumpi ng the chamber with an external low pressure pump and with an in situ getter pu mp disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.

公开(公告)号：MY118196A

公开(公告)日：2004-09-30

申请号：MYPI9804638

申请日：1998-10-10

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  APPLEGARTH CHARLES H

IPC: B01D53/04 ,  B01D53/30 ,  B01D53/34 ,  C23C16/44 ,  C30B25/14 ,  H01L21/205

Abstract: A SEMICONDUCTOR MANUFACTURING SYSTEM (1) INCLUDES A GETTER-BASED GAS PURIFIER (2) COUPLED IN FLOW COMMUNICATION WITH A GAS DISTRIBUTION NETWORK (4) FOR A SEMICONDUCTOR FABRICATION FACILITY (3). THE GAS DISTRIBUTION NETWORK (4) SUPPLIES PURIFIED GAS TO AT LEAST ONE WAFER PROCESSING CHAMBER (5A,5B,5C,5D,5E) IN THE SEMICONDUCTOR FABRICATION FACILITY (3). THE GAS PURIFIER (2) INCLUDES A GETTER COLUMN (10) HAVING A METALLIC VESSEL (12) WITH AN INLET (14, AN OUTLET (16), AND A CONTAINMENT WALL (18) EXTENDING BETWEEN THE INLET AND THE OUTLET. GETTER MATERIAL (30) WHICH PURIFIES GAS FLOWING THERETHROUGH BY SORBING IMPURITIES THEREFROM IS DISPOSED IN THE VESSEL (12). A FIRST TEMPERATURE SENSOR (34) IS DISPOSED IN A TOP PORTION OF THE GETTER MATERIAL(30). THE FIRST TEMPERATURE SENSOR IS LOCATED IN A MELT ZONE TO DETECT RAPIDLY THE ONSET OF AN EXOTHERMIC REACTION WHICH INDICATES THE PRESENCE OF EXCESS IMPURITIES IN THE INCOMING GAS TO BE PURIFIED. A SECOND TEMPERATURE SENSOR (36) IS DISPOSED IN A BOTTOM PORTION OF THE GETTER MATERIAL (30). THE SECOND TEMPERATURE SENSOR IS LOCATED IN A MELT ZONE TO DETECT RAPIDLY THE ONSET OF AN EXOTHERMIC REACTION WHICH INDICATES THAT EXCESS IMPURITIES ARE BEING BACKFED INTO THE GETTER COLUMN (10). FIRST AND SECOND HIGH MELTING POINT, NONMETALLIC LINERS ARE DISPOSED IN THE VESSEL (12) SUCH THAT AT LEAST SOME OF THE TOP AND BOTTOM PORTIONS, RESPECTIVELY, OF THE GETTER MATERIAL (30) IS SEPARATED FROM THE CONTAINMENT WALL (18) OF THE VESSEL. A GETTER-BASED GAS PURIFIER (2), A METHOD OF MAKING AN INTEGRATED CIRCUIT DEVICE, AND A METHOD OF PROTECTING A GETTERCOLUMN (10) ARE ALSO DESCRIBED. (FIGURE 2)

公开(公告)号：ES2245046T3

公开(公告)日：2005-12-16

申请号：ES98952101

申请日：1998-10-02

Applicant: SAES PURE GAS INC

Inventor： LORIMER D ARCY H ,  APPLEGARTH CHARLES H

IPC: B01D53/04 ,  B01D53/30 ,  B01D53/34 ,  C23C16/44 ,  C30B25/14 ,  H01L21/205

Abstract: Purificador de gas (2) basado en getter, que comprende: - una columna getter (10) que tiene un recipiente metálico (12) con una entrada (14), una salida (16) y un tabique de retención (18) que se extiende entre dicha entrada (14) y dicha salida (16), poseyendo dicho recipiente (12) material getter (30) dispuesto en su interior; - una primera válvula de aislamiento (42) en comunicación de fluido con dicha entrada (14) de dicho recipiente (12); - una válvula de ventilación (48) en comunicación de flujo con dicha entrada (14) del recipiente (12); - una segunda válvula de aislamiento (44) en comunicación de fluido con dicha salida (16) del recipiente (12); - un primer sensor de temperatura (34) dispuesto en la parte superior de dicho material getter (30).