Abstract:
A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.
Abstract:
One embodiment relates to an apparatus, including a CRT-type gun (for example, 102, or 302, or 510, or 1002, or 1113) and deflectors to generate and scan the electron beam, which utilizes the electron beam for inspection or metrology of a substrate. The apparatus may comprise a portable scanning electron microscope. Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate, where an electron beam is focused using electrostatic lenses formed by metal plates (704) supported by and separated by fused glass beads (706) or other insulating material. Another embodiment relates to a method of obtaining an electron beam image of a surface of a bulk specimen where a portable SEM device is moved to the bulk specimen. Other embodiments and features are also disclosed.
Abstract:
Methods and systems for creating a recipe for a defect review process are provided. One method includes determining an identity of a specimen on which the defect review process will be performed. The method also includes identifying inspection results for the specimen based on the identity. In addition, the method includes creating the recipe for the defect review process based on the inspection results. One system includes a sensor configured to generate output responsive to an identity of a specimen on which the defect review process will be performed. The system also includes a processor configured to determine the identity of the specimen using the output, to identify inspection results for the specimen based on the identity, and to create the recipe for the defect review process based on the inspection results.
Abstract:
Systems and methods for providing illumination of a specimen for inspection are provided. One system includes one or more first optical elements configured to illuminate a diffuser with a predetermined pattern of coherent light. The system also includes one or more second optical elements configured to image light exiting the diffuser onto an illumination pupil of the system such that the predetermined pattern is reproduced in the illumination pupil. In addition, the system includes an objective lens configured to focus light from the predetermined pattern in the illumination pupil onto a specimen plane. In one embodiment, the light focused onto the specimen plane is not substantially coherent. In another embodiment, the predetermined pattern is selected based on an illumination mode selected for the inspection of the specimen.
Abstract:
Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a 1D grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.
Abstract:
A system and method for inspecting a multi-layer sample, such as a silicon wafer, is disclosed. The design reduces variations in total reflected energy due to thin film interference. The design includes illuminating the sample at two incident angle ranges, where the two incident angle ranges are such that variation in total reflected energy at a first incident angle range may be employed to balance variation in total reflected energy at a second incident angle range. Defects are detected using die-to-die subtraction of the sample illuminated at the two incident angle ranges.
Abstract:
All-reflective optical systems for broadband wafer inspection are provided. One system configured to inspect a wafer includes an optical subsystem. All light-directing components of the optical subsystem are reflective optical components except for one or more refractive optical components, which are located only in substantially collimated space. The refractive optical component(s) may include, for example, a refractive beamsplitter element that can be used to separate illumination and collection pupils. The optical subsystem may also include one or more reflective optical components located in substantially collimated space. The optical subsystem is configured for inspection of the wafer across a waveband of greater than 20 nm. In some embodiments, the optical subsystem is configured for inspection of the wafer at wavelengths less than and greater than 200 nm.
Abstract:
To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.
Abstract:
Pixel intensities indicative of scattered radiation from portions of the inspected surface surrounding a location of a potential anomaly are also stored so that such data is available for quick review of the pixel intensities within a patch on the surface containing the location of the potential anomaly. Where rotational motion is caused between the illumination beam and the inspected surface, signal-to-noise ratio may be improved by comparing the pixel intensities of pixels at corresponding positions on two different surfaces that are inspected, where corresponding pixels at the same relative locations on the two different surfaces are illuminated and scattered radiation therefrom collected and detected under the same optical conditions.
Abstract:
A laser illuminator for use in an inspection system, such as a semiconductor wafer inspection system or photomask inspection system is provided. The gain medium in the illuminator comprises optical fiber, and amplification, beam splitting, frequency and/or bandwidth conversion, peak power reduction, and q-switching or mode locking may be employed. Certain constructs including doped fiber, gratings, saturable absorbers, and laser diodes are disclosed to provide enhanced illumination.