DIFFUSION BLOCKING LAYER FOR A COMPOUND SEMICONDUCTOR STRUCTURE

    公开(公告)号:US20210184435A1

    公开(公告)日:2021-06-17

    申请号:US17061305

    申请日:2020-10-01

    Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

    AXIAL ALIGNMENT OF A LENSED FIBER IN A GROOVED ASSEMBLY

    公开(公告)号:US20190170953A1

    公开(公告)日:2019-06-06

    申请号:US16140006

    申请日:2018-09-24

    Abstract: A v-groove assembly is used to edge couple a lensed fiber (e.g., an optical fiber made of silica) with a waveguide in a photonic chip. The v-groove assembly is made from fused silica. Fused silica is used to so that an adhesive (e.g., epoxy resin) used in bonding the lensed fiber to the v-groove assembly and/or bonding the v-groove assembly to the photonic chip can be cured, at least partially, by light.

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