公开(公告)号：JPH01143323A

公开(公告)日：1989-06-05

申请号：JP30168487

申请日：1987-11-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAHATA HIDEAKI ,  IMAI TAKAHIRO ,  FUJIMORI NAOHARU

IPC: H01L29/78 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/16 ,  H01L29/786 ,  H01L29/812

Abstract: PURPOSE:To enable a semiconductor element with superb electrical characteristics to be formed by using an abraded surface with an angle which does not exceed 10 deg. for the (100) surface of diamond single crystal on epitaxial growth. CONSTITUTION:A diamond single crystal with at least one abraded surface having an angle which does not exceed 10 deg. for the (100) surface of diamond single crystal is selected as a substrate 11. A diamond epitaxial layer 12 and at least one metal electrode 15 are provided by the gaseous phase growth method on the substrate 11. The diamond single crystal which becomes the substrate 11 is a natural or synthesized diamond single crystal. The diamond single crystal which becomes the substrate 11 is a diamond single crystal film where SiC layer is subject to hetero epitaxial growth as the buffer layer on the substrate 11. It allows a semiconductor element with improved electrical characteristics to be formed.

公开(公告)号：JPH01123423A

公开(公告)日：1989-05-16

申请号：JP28135987

申请日：1987-11-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAHATA HIDEAKI ,  IMAI TAKAHIRO ,  FUJIMORI NAOHARU

IPC: H01L21/205 ,  C30B29/04 ,  H01L21/306 ,  H01L23/36 ,  H01L23/373 ,  H01L29/78 ,  H01L29/786 ,  H05K7/20

Abstract: PURPOSE:To form a pattern of a diamond film simply, by selectively growing a diamond film on a part, which is not masked with a negative pattern film, and removing the negative pattern film. CONSTITUTION:A negative pattern film 12 comprising a mask material is formed on a substrate 11. A diamond film 13 is selectively grown on the exposed surface of the substrate 11, which is not covered with the mask material, in an intended pattern. The negative pattern film 12 is removed. Thus, an element, in which the intended pattern of the diamond film 13 is formed on the substrate 11, is obtained. The substrate 11 comprises metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. The mask material comprises transition metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. Thus, the pattern of the diamond film 13 is simply formed.

公开(公告)号：JPH0198278A

公开(公告)日：1989-04-17

申请号：JP15402288

申请日：1988-06-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： IMAI TAKAHIRO ,  HARADA KEIZO ,  YATSU SHUJI ,  JODAI TETSUJI

IPC: H01B12/02 ,  C01G1/00 ,  C04B41/80 ,  C23C14/48 ,  H01B13/00 ,  H01L39/24

Abstract: PURPOSE:To manufacture a circuit having a high superconducting critical temperature by selectively implanting predetermined ions to the face of a thin superconductor film made of composite oxide material formed on a substrate to so transit it as not to exhibit superconducting characteristic, and allowing a section to which the ions are not implanted to remain as a superconducting circuit. CONSTITUTION:A chamber 1 is connected through a discharge hole 7 to a vacuum pump, and ions generated in an ion source are accelerated by an ion acceleration power source 5. An atmospheric gas inlet hole 6 is attached to the chamber 1, and an inlet hole 6 for introducing gas to become ions to be implanted to the ion source, and an outlet hole 7 are attached thereto. The chamber 1 in which an oxide superconductor thin film 2 masked at a section to become a circuit is attached in advance with a resist or the like and the ion source are evacuated in vacuum, desired gas is introduced to the ion source, a high frequency power is applied to the high frequency coil 3 of the ion source, and an ion accelerating voltage is applied to an ion leading electrode 9. The ions are irradiated from the ion source to the film 2 by this operation, thereby forming a superconducting circuit.

公开(公告)号：JPS644592B2

公开(公告)日：1989-01-26

申请号：JP15581186

申请日：1986-07-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HARADA KEIZO ,  DOI AKIRA ,  FUJIMORI NAOHARU ,  IMAI TAKAHIRO

IPC: C23C16/26 ,  C01B31/06 ,  C23C16/27 ,  C23C16/50 ,  G03G5/08 ,  G03G5/14 ,  G03G5/147 ,  H01L21/205

公开(公告)号：JPS63288991A

公开(公告)日：1988-11-25

申请号：JP12298887

申请日：1987-05-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： KAWAI NANAO ,  KITAHAMA KATSUHIRO ,  NAKAMATSU HIROHIDE ,  FUJIMORI NAOHARU ,  IMAI TAKAHIRO

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/48 ,  C30B29/04

Abstract: PURPOSE:To easily and stably synthesize a superior-quality thin diamond film in a gaseous phase at low temp. on a substrate consisting of general material such as metal and a semiconductor by projecting ultraviolet laser light to a gaseous mixture of hydrocarbon and H2 at the specified energy density. CONSTITUTION:A gaseous mixture wherein both hydrocarbon (e.g. C2H2) such as CH4, C2H6, C2H4, C2H2 and H2 are mixed so that these are regulated to a ratio less than 1/9 is introduced into a device for an optical CVD method. For example, ultraviolet laser light having 193nm wavelength and 200Hz pulse period is oscillated in a rectangle of 10X20mm from an excimer laser of ArF and this laser light is converged with a convex lens and projected to that it is regulated to >=50mj/cm energy density per one pulse of ultraviolet laser light in a focus and a thin diamond film is formed on a substrate (e.g. Si substrate) at

公开(公告)号：JPS63274026A

公开(公告)日：1988-11-11

申请号：JP10811587

申请日：1987-05-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HARADA KEIZO ,  IMAI TAKAHIRO ,  YATSU SHUJI ,  JODAI TETSUJI

IPC: B28B1/00 ,  C23C14/08 ,  C23C14/24 ,  H01B12/06 ,  H01B13/00

Abstract: PURPOSE:To make it possible to manufacture a superconductive wire material of a high critical temperature Tc and an even composition by vacuum evaporating an oxide including Ba, Y, and Cu at a metallic inner wall, and forming a membrane of a perovskite structure oxide over the inner wall. CONSTITUTION:By carrying out a vacuum evaporation by using a mixture or an alloy including Ba, Y, and Cu as the vacuum evaporation source, a superconductive membrane of a perovskite structure oxide or a quasiperovskite structure oxide is formed on the inner wall of a metal pipe. The mixture or the alloy for the vacuum evaporation source is a sintered material made by sintering Ba, Y, and Cu powders, or an alloy made by melting such powders, and the sintered material has a better evaporation efficiency and gives a higher membrane producing speed. As the vacuum evaporation source 1, a wire material made by mixing and melting powders of Ba, Y, and Cu making the atomic ratio, Ba/(Ba+Y)=0.3, for example, is used. As the metal pipe 2, an Au pipe with the inside diameter 5.0 mm, and with the length a little shorter than the wire material of the vacuum evaporation source is used. Consequently, a superconductive wire material with the Tc much higher than that of the conventional superconductor can be manufactured easily and securely.

公开(公告)号：JPS63224226A

公开(公告)日：1988-09-19

申请号：JP5838287

申请日：1987-03-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJIMORI NAOHARU ,  IMAI TAKAHIRO

IPC: H01L21/205

Abstract: PURPOSE:To enable a single crystal diamond to be epitaxially grown on a gallium arsenic substrate by laying a single crystal silicon carbide as an intermediate layer between the diamond and the gallium arsenic substrate. CONSTITUTION:A single crystal SiC intermediate layer in film thickness of 2000 Angstrom is formed on a single crystal GaAs substrate in diameter of 2'' by plasma CVD process of SiH4 at substrate temperature of 1000 deg.C and vacuum degree of 2 torr. Next, H2 containing 0.5% CH4 is decomposed by microwave plasma CVD process at substrate temperature of 900 deg.C and vacuum degree of 30 torr to form a diamond layer in film thickness of 3000 Angstrom . The single crystal diamond layer thus formed is provided with spotty diffraction points. Through these procedures, the diamond can be epitaxially grown on a gallium arsenic substrate to form a thin film single crystal diamond substrate in large space at low cost.

公开(公告)号：JPS63224225A

公开(公告)日：1988-09-19

申请号：JP5838187

申请日：1987-03-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJIMORI NAOHARU ,  IMAI TAKAHIRO

IPC: H01L21/205

Abstract: PURPOSE:To enable a single crystal diamond to be epitaxially grown on a silicon substrate by laying a single crystal silicon carbide as an intermediate layer between the diamond and the silicon substrate layer. CONSTITUTION:The crystal face (111) of single crystal Si substrate in diameter of 2'' is carbonized in CH4 at 5 torr and 1350 deg.C for 20 minutes and then a single crystal SiC intermediate layer in film thickness of 2000 Angstrom is formed by plasma CVD process of SiH4 and CH4 at substrate temperature of 1300 deg.C and vacuum degree of 2 torr. Next, H2 containing 0.5% CH4 is decomposed by microwave plasma CVD process at substrate temperature of 900 deg.C and vacuum degree of 30 torr to form a diamond layer in film thickness of 3000 Angstrom . The diamond layer thus formed in single crystal face (111) is provided with spotty diffraction points. Through these procedures, the diamond can be epitaxially grown on a silicon substrate to form a thin film single crystal diamond substrate in large space at low cost.

公开(公告)号：JPS63220525A

公开(公告)日：1988-09-13

申请号：JP5443387

申请日：1987-03-09

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOHARU

IPC: H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To increase an etching rate, and to reduce damage to the surface after etching by etching a semiconductor consisting of diamond by using the plasma of oxygen or a reaction gas containing oxygen. CONSTITUTION:A semiconductor composed of diamond is etched by employing the plasma of oxygen or a reaction gas containing oxygen. The plasma of oxygen or the reaction gas including oxygen may be used as the etching method, and the etching method can be executed even by ion beam type etching, in which voltage is applied to the plasma and accelerated, besides plasma etching by parallel plate type electrode discharge employing DCs or high frequency. Accordingly, the diamond semiconductor can be etched under the state in which the damage to the surface is reduced by etching at a large etching rate.

公开(公告)号：JPS63153275A

公开(公告)日：1988-06-25

申请号：JP19919787

申请日：1987-08-11

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJIMORI NAOJI ,  IMAI TAKAHIRO

IPC: C23C16/26 ,  B23B27/14 ,  C23C16/27 ,  C23C16/32 ,  C23C16/50 ,  C23C16/511

Abstract: PURPOSE:To obtain diamond-coated alumina nearly preventing the stripping of the diamond film and having extremely superior wear resistance by forming a diamond film on the surface of alumina with a silicon carbide film in-between. CONSTITUTION:The surface of alumina is coated with an SiC film and a diamond film is synthesized on the SiC film by a vapor growth method. Since the alumina surface is coated beforehand, even when diamond is synthesized by CVD in a reducing atmosphere, the alumina surface is not affected by the reducing atmosphere during the formation of a diamond film, so alumina coated with a diamond film having improved stripping resistance can be obtd. The pref. thickness of the SiC film is about 0.1-30mum and that of the diamond film is 0.5-30mum and/or the SiC is preferably amorphous. The diamond-coated alumina is applicable to a cutting tool, the diaphragm of a speaker, wear resistant parts, an IC board, etc.