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    Diamond interconnection substrate and a manufacturing method therefor
    1.
    发明授权
    Diamond interconnection substrate and a manufacturing method therefor 失效
    金刚石互连基板及其制造方法

    公开(公告)号：US6423982B2

    公开(公告)日：2002-07-23

    申请号：US76523801

    申请日：2001-01-16

    Applicant: JAPAN FINE CERAMICS CT ,  SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NISHIBAYASHI YOSHIKI ,  MATSUURA TAKASHI ,  IMAI TAKAHIRO

    IPC: H05K1/03 ,  H01L21/48 ,  H01L23/373 ,  H01L23/498 ,  H05K3/10 ,  H05K3/14 ,  H01L31/0312

    CPC classification number: H01L23/3732 ,  H01L21/4846 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K3/14 ,  H01L2924/00

    Abstract: An electrical connection board includes a diamond substrate and an implantation metal layer constituted by the presence of metal elements in the diamond substrate. The metal layer has a thickness of at least 10 nm and a concentration of at least 1020 cm-3 in the diamond substrate. The implantation metal layer is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 1016 cm-2. Thus, a technique is provided by which a multi-layer electrical interconnection is realized in the diamond substrate having the highest thermal conductivity of all known materials.

    Abstract translation: 电连接板包括金刚石基底和由金刚石基底中的金属元素的存在构成的注入金属层。 该金属层在金刚石基底中具有至少10nm的厚度和至少1020cm-3的浓度。 注入金属层通过离子注入具有至少1MeV的高能量水平和至少1016cm-2的高剂量的金属元素形成。 因此，提供了一种在具有所有已知材料的最高热导率的金刚石基底中实现多层电互连的技术。

    4.
    发明专利
    未知

    公开(公告)号：DE69936672T2

    公开(公告)日：2008-04-30

    申请号：DE69936672

    申请日：1999-01-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAMOTO YOSHIYUKI ,  SAITO HIROHISA ,  IMAI TAKAHIRO ,  MEGURO KIICHI

    IPC: H01L23/373 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495

    Abstract: A heatsink comprising: a substrate (26) of a sintered compact including Cu and W, and a thin diamond film layer (31) formed on a surface of said substrate (26), wherein the Cu content in said substrate is at least 5% by weight, and wherein the diffraction peak intensity of the (211) plane of W is at least 30 times the diffraction peak intensity of the (200) plane of Cu in an X-ray diffraction chart obtained by irradiating said thin diamond film (31) layer with an X-ray.

    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE,ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    5.
    发明专利
    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE,ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE 未知

    公开(公告)号：CA2608851A1

    公开(公告)日：2006-12-21

    申请号：CA2608851

    申请日：2006-06-19

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： UEDA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO ,  YAMAMOTO YOSHIYUKI

    IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

    Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2 × 10 15 cm -3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 µm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

    6.
    发明专利
    未知

    公开(公告)号：DE60123169D1

    公开(公告)日：2006-11-02

    申请号：DE60123169

    申请日：2001-06-07

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MEGURO KIICHI ,  MATSUURA TAKASHI ,  IMAI TAKAHIRO

    IPC: C23C16/27 ,  C30B29/04 ,  C23C16/511 ,  C23C16/52 ,  C30B25/02

    Abstract: A method and an apparatus for forming a large area of a high-quality diamond film from a microwave plasma by controlling the processing conditions based on the spectroscopic measurement of the plasma emission. In the method of forming a diamond film, a gas mixture of a hydrocarbon gas and hydrogen gas is introduced into a reactor (7), and the gas mixture is excited by microwaves, which are also introduced into the reactor (7), to generate plasma. The light emitted from the plasma is then measured by spectroscopic means. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range.

    DIAMOND ELECTRON EMITTER AND ELECTRON BEAM SOURCE USING SAME
    8.
    发明专利
    DIAMOND ELECTRON EMITTER AND ELECTRON BEAM SOURCE USING SAME 未知

    公开(公告)号：CA2522851A1

    公开(公告)日：2005-03-24

    申请号：CA2522851

    申请日：2004-09-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO ,  TATSUMI NATSUO

    IPC: H01J1/304 ,  H01J1/308

    Abstract: Disclosed is an electron emitter which is smaller in size, lower in operatin g voltage, and high in efficiency than the conventional ones. Also disclosed i s an electron beam source using such an electron emitter. The electron emitter comprises a light-emitting element for irradiating a cathode with light, and at least electron-emitting surface of the cathode is composed of diamond. By having such a structure, the voltage for extracting electrons can be greatly lowered in this electron emitter than the conventional ones. Namely, there i s obtained a small-sized electron emitter which can be operated at low voltage . The above-mentioned light-emitting element is preferably formed integrally with the cathode. The light-emitting element and the electrode are preferabl y composed of diamond. Further, it is desirable that the electron-emitting surface of the cathode is composed of an n-type or p-type diamond semiconductor.

    LOW-RESISTANCE N TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME
    9.
    发明专利
    LOW-RESISTANCE N TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME 未知

    公开(公告)号：CA2474909A1

    公开(公告)日：2004-07-22

    申请号：CA2474909

    申请日：2003-12-22

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： TAKEUCHI HISAO ,  IMAI TAKAHIRO ,  NAMBA AKIHIKO

    IPC: C30B29/04 ,  C23C16/27 ,  C23C16/448 ,  C23C16/48 ,  C30B25/10 ,  H01L21/205 ,  H01L21/22

    Abstract: A diamond doped with lithium, especially a low-resistance n type semiconductor diamond doped with lithium and nitrogen; and a process for producing the same. In particular, a low-resistance n type semiconductor diamond containing lithium atoms and nitrogen atoms both in an amount of 1017 cm-3 or more, which low-resistance n type semiconductor diamond has such a structure that carbon atom interstitial positions thereof are doped with lithium atoms while carbon atom substitution positions thereof are doped with nitrogen atoms, the lithium atoms and nitrogen atoms disposed adjacent to each other. The low-resistance n type semiconductor diamond can be obtained through a process comprising in a diamond vapor-phase synthetic process, photolyzing a raw material according to a photoexcitation technique using vacuum ultraviolet radiation while with respect to a lithium material, exposing the same to excimer laser so as to effect scattering and supply of lithium atoms.

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