Abstract:
A cap assembly that can be associated with a container storing a primary material includes a lid fixed on a top of the container and having an exhausting portion projected upward, a cap main body detachably coupled to the exhausting portion of the lid and having a storage tube extending downward to define a storage chamber for storing a secondary material, and an inner cap body detachably coupled to the storage tube.
Abstract:
A nonvolatile memory device comprises a memory cell array, a row selection circuit and a voltage generator. The memory cell array comprises a first dummy memory cell, a second dummy memory cell, and a NAND string comprising a plurality of memory cells coupled in series between a string selection transistor and a ground selection transistor through the first dummy memory cell and the second dummy memory cell. During a read-out operation mode, a dummy read-out voltage is applied to a first dummy wordline coupled to the first dummy memory cell, and to a second dummy wordline coupled to the second dummy memory cell. The dummy read-out voltage has a lower magnitude than a read-out voltage applied to an unselected memory cell during the read-out operation mode.
Abstract:
A system and method for managing bandwidth used by videos in a wireless telecommunications network is provided. In one embodiment, the videos originate at mobile devices generating videos of a single event such as a concert, sporting event, graduation, or other event attended by multiple users. The mobile devices may communicate the videos to social networking websites where the videos may be viewed by multiple users. Embodiments of the present invention conserve bandwidth by selecting one or more of the videos of the single event to send to each of the destinations specified by all of the videos capturing the event. An instruction is then sent to each of the mobile devices generating nonselected video streams to discontinue transmission of the video streams.
Abstract:
An auto-precharge signal generation circuit comprises a signal generator, a set signal generator, and an auto-precharge signal generator. The signal generator is configured to generating a control signal and a precharge control signal in response to receiving a first column address strobe signal and an auto-precharge flag signal. The set signal generator is configured to generating a set signal in response to receiving the control signal and the precharge control signal. The auto-precharge signal generator is configured to generate an auto-precharge signal in response to receiving the set signal and a period set signal.
Abstract:
A technique for manipulating multimedia streams of IP telecommunications for multiple IP-enabled user devices is disclosed. The disclosed technique allows at least a portion of an IP telecommunication is manipulated to selected IP-enabled user devices. Various methods using the multimedia stream manipulation technique are presented.
Abstract:
A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.
Abstract:
A method of fabricating a semiconductor device according to present invention includes forming a stack layers on a semiconductor substrate having a first area and a second area; forming first gates on the semiconductor substrate of the first area by patterning the stack layers, wherein the first gates are formed a first distance apart from each other; forming a first impurity injection area in the semiconductor substrate of the first area exposed at both sides of each of the first gates; filling a space between the first gates with an insulating layer; forming second gates on the semiconductor substrate of the second area by patterning the stack layers, wherein the second gates are formed a second distance apart from each other, and wherein the second distance is larger than the first distance; and forming a second impurity injection area in the semiconductor device of the second area exposed between the second gates.
Abstract:
A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
Abstract:
Provided are an apparatus and method for forensic marking of digital content. The apparatus includes a forensic marker configured to generate first content by inserting a first binary forensic mark in original content and second content by inserting a second binary forensic mark in the original content, and when a content service request is generated, combine the first content and the second content on the basis of information about a user who has requested the content service and thereby generate third content in which a forensic mark corresponding to the user information is inserted, a content database configured to store the first and second content, and a transceiver configured to transmit the third content.
Abstract:
A non-volatile memory device includes a peripheral circuit region and a cell region. A method for fabricating the non-volatile memory device includes forming gate patterns over a substrate, the gate pattern including a tunnel insulation layer, a floating gate electrode, a charge blocking layer and a control gate electrode, and removing the control gate electrode and the charge blocking layer of the gate pattern formed in the peripheral circuit region.