Structure of cap having storage space
    171.
    发明授权
    Structure of cap having storage space 有权
    具有存储空间的盖的结构

    公开(公告)号:US08215505B2

    公开(公告)日:2012-07-10

    申请号:US10592028

    申请日:2005-03-08

    CPC classification number: B65D51/2878 B65D51/2864 Y10S215/08

    Abstract: A cap assembly that can be associated with a container storing a primary material includes a lid fixed on a top of the container and having an exhausting portion projected upward, a cap main body detachably coupled to the exhausting portion of the lid and having a storage tube extending downward to define a storage chamber for storing a secondary material, and an inner cap body detachably coupled to the storage tube.

    Abstract translation: 可以与容纳主要材料的容器相关联的盖组件包括固定在容器的顶部上并具有向上突出的排出部分的盖,可拆卸地联接到盖的排出部分的盖主体,并具有储存管 向下延伸以限定用于存储次级材料的储存室,以及可拆卸地联接到储存管的内盖主体。

    NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM EMPLOYING SAME
    172.
    发明申请
    NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM EMPLOYING SAME 有权
    非易失性存储器件和非易失性存储器系统

    公开(公告)号:US20120170370A1

    公开(公告)日:2012-07-05

    申请号:US13419732

    申请日:2012-03-14

    CPC classification number: G11C16/28 G11C16/0408

    Abstract: A nonvolatile memory device comprises a memory cell array, a row selection circuit and a voltage generator. The memory cell array comprises a first dummy memory cell, a second dummy memory cell, and a NAND string comprising a plurality of memory cells coupled in series between a string selection transistor and a ground selection transistor through the first dummy memory cell and the second dummy memory cell. During a read-out operation mode, a dummy read-out voltage is applied to a first dummy wordline coupled to the first dummy memory cell, and to a second dummy wordline coupled to the second dummy memory cell. The dummy read-out voltage has a lower magnitude than a read-out voltage applied to an unselected memory cell during the read-out operation mode.

    Abstract translation: 非易失性存储器件包括存储单元阵列,行选择电路和电压发生器。 存储单元阵列包括第一虚拟存储单元,第二虚拟存储单元和NAND串,其包括通过第一虚拟存储单元和第二虚拟存储单元串联耦合在串选择晶体管和接地选择晶体管之间的多个存储单元 记忆单元 在读出操作模式期间,将虚拟读出电压施加到耦合到第一虚拟存储器单元的第一伪字线以及耦合到第二虚拟存储单元的第二虚拟字线。 在读出操作模式期间,虚拟读出电压具有比在未选择存储单元上施加的读出电压更低的量值。

    Conserving bandwidth by restricting videos communicated in a wireless telecommunications network
    173.
    发明授权
    Conserving bandwidth by restricting videos communicated in a wireless telecommunications network 失效
    通过限制在无线电信网络中传送的视频来节省带宽

    公开(公告)号:US08214862B1

    公开(公告)日:2012-07-03

    申请号:US12501794

    申请日:2009-07-13

    Abstract: A system and method for managing bandwidth used by videos in a wireless telecommunications network is provided. In one embodiment, the videos originate at mobile devices generating videos of a single event such as a concert, sporting event, graduation, or other event attended by multiple users. The mobile devices may communicate the videos to social networking websites where the videos may be viewed by multiple users. Embodiments of the present invention conserve bandwidth by selecting one or more of the videos of the single event to send to each of the destinations specified by all of the videos capturing the event. An instruction is then sent to each of the mobile devices generating nonselected video streams to discontinue transmission of the video streams.

    Abstract translation: 提供了一种用于管理无线电信网络中的视频使用的带宽的系统和方法。 在一个实施例中,视频源自于生成诸如音乐会,体育赛事,毕业或由多个用户参与的其他事件的单个事件的视频的移动设备。 移动设备可以将视频传达到社交网站,其中可以由多个用户观看视频。 本发明的实施例通过选择要发送到捕获事件的所有视频指定的每个目的地的一个事件的一个或多个视频来节省带宽。 然后将指令发送到产生非选择视频流的每个移动设备以中止视频流的传输。

    AUTO-PRECHARGE SIGNAL GENERATOR
    174.
    发明申请
    AUTO-PRECHARGE SIGNAL GENERATOR 有权
    自动预调信号发生器

    公开(公告)号:US20120163100A1

    公开(公告)日:2012-06-28

    申请号:US13410859

    申请日:2012-03-02

    CPC classification number: G11C7/12 G11C7/22

    Abstract: An auto-precharge signal generation circuit comprises a signal generator, a set signal generator, and an auto-precharge signal generator. The signal generator is configured to generating a control signal and a precharge control signal in response to receiving a first column address strobe signal and an auto-precharge flag signal. The set signal generator is configured to generating a set signal in response to receiving the control signal and the precharge control signal. The auto-precharge signal generator is configured to generate an auto-precharge signal in response to receiving the set signal and a period set signal.

    Abstract translation: 自动预充电信号发生电路包括信号发生器,设定信号发生器和自动预充电信号发生器。 信号发生器被配置为响应于接收到第一列地址选通信号和自动预充电标志信号而产生控制信号和预充电控制信号。 设置信号发生器被配置为响应于接收到控制信号和预充电控制信号而产生设置信号。 自动预充电信号发生器被配置为响应于接收到设置信号和周期设置信号而产生自动预充电信号。

    SYSTEM AND METHOD FOR MANIPULATING MULTIMEDIA STREAMS OF IP TELECOMMUNICATIONS FOR MULTIPLE IP-ENABLED USER DEVICES
    175.
    发明申请
    SYSTEM AND METHOD FOR MANIPULATING MULTIMEDIA STREAMS OF IP TELECOMMUNICATIONS FOR MULTIPLE IP-ENABLED USER DEVICES 审中-公开
    用于多IP通信用户设备的IP电信多媒体流控制系统和方法

    公开(公告)号:US20120158937A1

    公开(公告)日:2012-06-21

    申请号:US13329216

    申请日:2011-12-16

    Applicant: Song Jae Lee

    Inventor: Song Jae Lee

    CPC classification number: H04L65/1069 H04L65/1073 H04L65/4084

    Abstract: A technique for manipulating multimedia streams of IP telecommunications for multiple IP-enabled user devices is disclosed. The disclosed technique allows at least a portion of an IP telecommunication is manipulated to selected IP-enabled user devices. Various methods using the multimedia stream manipulation technique are presented.

    Abstract translation: 公开了一种用于操作用于多个启用IP的用户设备的IP电信的多媒体流的技术。 所公开的技术允许IP电信的至少一部分被操纵到选定的启用IP的用户设备。 提出了使用多媒体流操作技术的各种方法。

    METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN
    176.
    发明申请
    METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN 有权
    用于制作大面积纳米图案的方法

    公开(公告)号:US20120156882A1

    公开(公告)日:2012-06-21

    申请号:US13242331

    申请日:2011-09-23

    CPC classification number: H01L21/0337 B82Y10/00 H01L21/0338 Y10S438/947

    Abstract: A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.

    Abstract translation: 一种制造大面积纳米级图案的方法包括:形成由钝化层隔离的多层主薄膜; 图案化第一主薄膜以形成第一主图案; 相对于所述第一主图形形成第一间隔图案; 以及通过将第一间隔图案转印到第二主薄膜上而形成第二主图案。 通过使用由不同钝化膜分离的多层主薄膜,可以重复地进行能够减小图案间距的间隔光刻,并且在形成微米尺度图案之后,图案间距重复减小而没有形状变形,从而形成纳米级精细图案 均匀地在广泛的地区。

    METHOD OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE
    177.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE 有权
    制造半导体存储器件的方法

    公开(公告)号:US20120156841A1

    公开(公告)日:2012-06-21

    申请号:US13325312

    申请日:2011-12-14

    CPC classification number: H01L27/11534 H01L27/11529

    Abstract: A method of fabricating a semiconductor device according to present invention includes forming a stack layers on a semiconductor substrate having a first area and a second area; forming first gates on the semiconductor substrate of the first area by patterning the stack layers, wherein the first gates are formed a first distance apart from each other; forming a first impurity injection area in the semiconductor substrate of the first area exposed at both sides of each of the first gates; filling a space between the first gates with an insulating layer; forming second gates on the semiconductor substrate of the second area by patterning the stack layers, wherein the second gates are formed a second distance apart from each other, and wherein the second distance is larger than the first distance; and forming a second impurity injection area in the semiconductor device of the second area exposed between the second gates.

    Abstract translation: 根据本发明的制造半导体器件的方法包括在具有第一区域和第二区域的半导体衬底上形成堆叠层; 通过图案化所述堆叠层,在所述第一区域的所述半导体衬底上形成第一栅极,其中所述第一栅极彼此分开形成第一距离; 在所述第一栅极的两侧露出的所述第一区域的半导体衬底中形成第一杂质注入区域; 用绝缘层填充第一栅极之间的空间; 通过对所述堆叠层进行构图来形成所述第二区域的所述半导体衬底上的第二栅极,其中所述第二栅极彼此分开形成第二距离,并且其中所述第二距离大于所述第一距离; 以及在所述第二栅极之间暴露的所述第二区域的所述半导体器件中形成第二杂质注入区域。

    Light emitting device having vertical structrue and method for manufacturing the same
    178.
    发明授权
    Light emitting device having vertical structrue and method for manufacturing the same 有权
    具有垂直结构的发光器件及其制造方法

    公开(公告)号:US08203162B2

    公开(公告)日:2012-06-19

    申请号:US12656612

    申请日:2010-02-04

    CPC classification number: H01L33/0079 H01L33/0095 H01L33/62 H01L2224/24

    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

    Abstract translation: 公开了具有垂直结构的发光器件及其制造方法,其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 发光器件包括具有多层结构的半导体层,布置在半导体层的一个表面的第一电极,布置在第一电极上的金属支撑体和布置在第一电极和金属支撑体之间的冲击阻尼层,以及 由具有高于用于金属支撑件的金属的延展性的延展性的金属制成。

    APPARATUS AND METHOD FOR FORENSIC MARKING OF DIGITAL CONTENT
    179.
    发明申请
    APPARATUS AND METHOD FOR FORENSIC MARKING OF DIGITAL CONTENT 有权
    数字内容的威信标记的装置和方法

    公开(公告)号:US20120151598A1

    公开(公告)日:2012-06-14

    申请号:US13310013

    申请日:2011-12-02

    CPC classification number: G06F21/10 G06F2221/0713 G06F2221/0733

    Abstract: Provided are an apparatus and method for forensic marking of digital content. The apparatus includes a forensic marker configured to generate first content by inserting a first binary forensic mark in original content and second content by inserting a second binary forensic mark in the original content, and when a content service request is generated, combine the first content and the second content on the basis of information about a user who has requested the content service and thereby generate third content in which a forensic mark corresponding to the user information is inserted, a content database configured to store the first and second content, and a transceiver configured to transmit the third content.

    Abstract translation: 提供了用于数字内容的法医标记的装置和方法。 该装置包括:取证标记,被配置为通过在原始内容中插入第二二进制取证标记并在原始内容中插入第二二进制取证标记来生成第一二进制取证标记,并且当生成内容服务请求时,将第一内容和 基于关于已经请求内容服务的用户的信息并由此生成其中插入与用户信息相对应的取证标记的第三内容的第二内容,被配置为存储第一和第二内容的内容数据库和收发器 被配置为发送第三内容。

    Non-volatile memory device and method for fabricating the same
    180.
    发明授权
    Non-volatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US08198156B2

    公开(公告)日:2012-06-12

    申请号:US13012259

    申请日:2011-01-24

    Applicant: Nam-Jae Lee

    Inventor: Nam-Jae Lee

    CPC classification number: H01L27/11529 H01L27/11521

    Abstract: A non-volatile memory device includes a peripheral circuit region and a cell region. A method for fabricating the non-volatile memory device includes forming gate patterns over a substrate, the gate pattern including a tunnel insulation layer, a floating gate electrode, a charge blocking layer and a control gate electrode, and removing the control gate electrode and the charge blocking layer of the gate pattern formed in the peripheral circuit region.

    Abstract translation: 非易失性存储器件包括外围电路区域和单元区域。 一种用于制造非易失性存储器件的方法包括在衬底上形成栅极图案,栅极图案包括隧道绝缘层,浮栅电极,电荷阻挡层和控制栅电极,以及去除控制栅极和 形成在外围电路区域中的栅极图案的电荷阻挡层。

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