Abstract:
In order to prevent voltage drops across the wiring resistances in a multi-electron source having a plurality of electron emitters wired in the form of a matrix through a plurality of data wiring layers and a plurality of scanning wiring layers, a constant current signal is output to each data wiring layer. At this time, each non-selected data wiring layer tends to be set at a high impedance and vary in potential, resulting in an abnormal turn-on operation or an electron orbit shift. A driving circuit for solving this problem is provided. A switch for switching a constant current output unit for outputting a constant current regardless of the impedance of a signal output destination, and a constant voltage output unit for outputting a constant voltage regardless of the impedance of a signal output destination is connected to each data wiring layer. For example, a constant-current circuit (17) as a current output unit always outputs the same current (I1 to In) to a switch (30). A pulse width signal (PW1 to PWn) from a pulse-width modulation circuit (7) serves to switch the mode of outputting a current (I1 to In) to a data wiring layer (Dy1 to Dyn) and the mode of fixing a data wiring layer to voltage GND.
Abstract:
A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.
Abstract:
A Field Emitter Device (FED) having a substantially reducing atmosphere is described. The atmosphere in a FED can be maintained substantially free of oxidizing gases and includes a partial pressure of hydrogen between about 1.times.10.sup.-7 millibar (mbar) and 1.times.10.sup.-3 mbar. In one embodiment, a non-evaporable getter material previously charged with hydrogen gas is placed inside the FED before the FED is sealed. The non-evaporable getter material can be charged by exposure to hydrogen gas at a pressure between about 1.times.10.sup.-4 and about 2 bar. Subsequently, the components forming the FED are sealed, and the FED is evacuated and hermetically sealed to the outside atmosphere.
Abstract:
A process for producing a field emitter flat display includes providing a supported porous layer of a non-evaporable getter material by depositing the non-evaporable getter material on a substrate followed by sintering the deposited material. The substrate having the porous layer of non-evaporable getter material thereon is then housed in an inner space defined by opposing plates. The inner space is then evacuated and hermetically sealed. The non-evaporable getter material is preferably deposited by preparing a suspension of non-evaporable getter material particles in a suspending medium, coating a surface of a substrate with the suspension by, e.g., spraying, and sintering the coating.
Abstract:
In order to cause a multi-electron source having electron emitters wired in the form of a matrix to emit electrons without any variations, there is provided an electron generating device including a multi-electron source (601) having a plurality of electron emitters (1002) wired in the form of a matrix through a plurality of data wiring layers (1004) and a plurality of scanning wiring layers (1003), and a driving circuit for driving the multi-electron source (601), the driving circuit including a first driving means (603) for applying a first voltage (Vs) to a scanning wiring layer to which an electron emitter which is to emit electrons is connected, and applying a second voltage (Vns) to a scanning wiring layer to which an electron emitter which is not to emit electrons is connected, and a second driving means (602) for applying a third voltage (Ve) to a data wiring layer to which an electron emitter which is to emit electrons is connected, and applying a fourth voltage (Vg) to a data wiring layer to which an electron emitter which is not to emit electrons is connected, wherein the second voltage (Vns) is substantially equal to the third voltage (Ve).
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
Abstract:
A device comprising a conductor and an emitter electrode for emitting electrons formed on the conductor, the emitter electrode including a mass of a plurality of columnar crystals each containing .beta.-tungsten and having a sharpened tip end portion for emitting electrons, the plurality of columnar crystals being put in contact with one another.
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
Abstract:
A field emitter including an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.
Abstract:
A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.