公开(公告)号：US20240014007A1

公开(公告)日：2024-01-11

申请号：US17435509

申请日：2020-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Norihiko Ikeda ,  Kazuya Yamada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32293 ,  H01J37/32128 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

公开(公告)号：US11823870B2

公开(公告)日：2023-11-21

申请号：US16990306

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Arkaprava Dan ,  Joseph AuBuchon ,  Kyoung Ha Kim ,  Philip A. Kraus

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/34 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20230253186A1

公开(公告)日：2023-08-10

申请号：US18133216

申请日：2023-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Arkaprava DAN ,  Joseph AUBUCHON ,  Kyoung Ha KIM ,  Philip A. KRAUS

IPC: H01J37/32 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20230207271A1

公开(公告)日：2023-06-29

申请号：US18055917

申请日：2022-11-16

Applicant: SEMES CO., LTD. ,  PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION

Inventor： Yoon Seok CHOI ,  Sun Wook JUNG ,  Jong Won PARK ,  Ho-Jun LEE ,  Min Sang PARK

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/3244 ,  H01J37/32229 ,  H01J2237/327

Abstract: The apparatus includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, a gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma. The microwave application unit may include first power supply for applying a first microwave, a support plate having a groove formed on an upper surface thereof and combined with the process chamber above the support unit to define the treating space, a first transmission plate inserted into the groove to radiate the first microwave to the treating space, and a first waveguide disposed to overlap with an upper portion of the first transmission plate and coupled to the first power supply, wherein a plurality of grooves may be formed along a circumferential direction in an edge region of the support plate.

公开(公告)号：US20230178339A1

公开(公告)日：2023-06-08

申请号：US17994711

申请日：2022-11-28

Applicant: Tokyo Electron Limited

Inventor： Kenta KATO ,  Taro IKEDA ,  Isao GUNJI

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32238 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a processing container including an opening provided in a ceiling wall of the processing container, and a microwave radiation source. The microwave radiation source includes a slot antenna including a slot and configured to radiate microwaves from the slot, and a transmission window configured to close the opening and to radiate the microwaves from the slot into the processing container. The transmission window includes a first surface including a skirt which suspends to cover a side wall of the opening, and a second surface which is an opposite surface to the first surface and faces the slot antenna with a gap between the slot antenna and the second surface.

公开(公告)号：US11660361B2

公开(公告)日：2023-05-30

申请号：US16062018

申请日：2016-11-24

Applicant: KHS GMBH

Inventor： Juergen Franz Vorwerk ,  Igor Singur ,  Sebastian Kytzia

IPC: A61L2/14 ,  A61L2/20 ,  C23C16/04 ,  C23C16/54 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32

CPC classification number: A61L2/14 ,  A61L2/202 ,  A61L2/208 ,  C23C16/045 ,  C23C16/4409 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32201 ,  A61L2202/23

Abstract: The invention relates to a method and an apparatus for the plasma treatment of containers. The essential aspect according to the method according to the invention is that, after the plasma treatment at the plasma station and before the container is filled, at least the container interior of the container is at least partially ventilated with a sterilization medium, i.e. is loaded with a sterilization medium.

公开(公告)号：US09922823B1

公开(公告)日：2018-03-20

申请号：US15258624

申请日：2016-09-07

Applicant: Euclid TechLabs, LLC

Inventor： James E Butler

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01L21/02527 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32724 ,  H01J2237/3321 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02376 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02656 ,  H01L22/12 ,  H01L22/26

Abstract: An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm−2 sheet carrier concentration.

公开(公告)号：US20180019103A1

公开(公告)日：2018-01-18

申请号：US15646290

申请日：2017-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Naoki MATSUMOTO ,  Kazushi KANEKO

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32266 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32256 ,  H01J37/32311 ,  H01J37/32935

Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

公开(公告)号：US09767993B2

公开(公告)日：2017-09-19

申请号：US14349807

申请日：2012-10-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kiyotaka Ishibashi ,  Osamu Morita

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/455 ,  C23C16/511 ,  H05H1/46

CPC classification number: H01J37/32201 ,  C23C16/45563 ,  C23C16/511 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32495 ,  H05H2001/463

Abstract: This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (10), electrical discharge prevention members (96(1) to 96(8)), each of which is provided to a plurality of dielectric window gas passages (94(1) to (94(8)) through which a dielectric window (54) passes. Each electrical discharge prevention member (96(n)), a portion (114) of which protrudes only a height h, which is greater than or equal to a predetermined distance H, upward from the rear surface of a dielectric window (52) on the inlet side, passes through an opening (54a) of a slot plate (54), and inserts into a branched gas supply path (92(n)) of a gas branch part (90). The gas branch part (90), spring coils (116) and the slot plate (54), which surround the protruding portion (114) of each electrical discharge prevention member (96(n)), constitute an enclosing conductor (118).

公开(公告)号：US09691591B2

公开(公告)日：2017-06-27

申请号：US14127286

申请日：2012-06-29

Applicant: Masahide Iwasaki

Inventor： Masahide Iwasaki

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

Abstract: The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.