Abstract:
This invention consists of a radiation sensor with a thermal cycling and synchronous readout scheme. It is intended for use with pyro-optical materials which exhibit a phase transition that is hysteric. A preferred material is vanadium oxide which has a semiconductor-metal phase transition typically at 68 deg C. and a hysteresis of a few degrees C. depending on material processing. The temperature of the pyro-optical film is cycled in synchronization with readout electronics to achieve a reset reference for the readout once each repetitive cycle. When the thermal cycle is divided into two regions, a reference and a biased frame are obtained. The readout electronics compare the reference frame the biased frame to obtain a desired difference which is an unbiased frame.
Abstract:
An on-engine radiation thermometer that simultaneously measures, through a common optical waveguide probe, long wavelength infrared radiation and short wavelength radiation, enables accurate temperature measurement and condition monitoring of ceramic thermal barrier coatings used on metal blades of gas turbine engines. This in turn enables operation at higher combustion temperatures, thereby optimizing coating use, and provides warning signals that are indicative of potential blade failure due to barrier coating spall and other conditions.
Abstract:
A passive infrared sensor uses two detectors having elements of different configurations such that each element outputs a respective frequency when an object moves in front of it. Based on the presence of two frequencies with similar peak and/or slope characteristics, a motion signal is output to, e.g., activate an alarm. In another embodiment the detectors have plural elements with the elements of one detector being wired in a dimension that is orthogonal to the dimension in which the elements of the other detector are wired. The signals from the detectors are combined to determine motion and size of object. The detector elements can also be configured differently from each other as in the first embodiment, and the polarities of signals can be used to determine direction of motion. In yet another embodiment the detectors can be of the same size but have optics of different focal lengths.
Abstract:
Optical methods and devices for measuring temperature and a secong physical parameter, using a single photoluminescent probe material comprised of a single luminophor, and methods and devices for determining temperature-corrected values of said second physical parameter, which can be an oxygen or air pressure or a parameter chosen from the group comprising an electrical current, a magnetic field and an electrical field or voltage. The luminophor is excited sequentially by a first excitation light of chosen first wavelengths and intensity P1 which generates a first luminescence light of intensity I1, and a second excitation light of chosen second wavelengths and intensity P2 which generates a second luminescence light of intensity I2. The ratio (I2.P1/I1.P2) varies substantially in a known manner with varying temperature, substantially independent of the magnitude of said second physical parameter, thus providing a temperature correction factor to the measurement of said second physical parameter.
Abstract:
The invention concerns an infrared sensor (2) comprising a plurality of pixels (12) having a structured layer (20) for infrared light absorption located at the sensor upper surface. The invention is characterised in that the absorption layer (20) is formed of colloidal particles, in particular graphite or metal oxide wafers embedded or sealed in a binder. The method for making such a sensor consists in forming the structured layer by deposit of the colloidal particles in accordance with a standard technique and then in eliminating partly the thus formed absorption layer to obtain a plurality of elementary absorption zones respectively associated with the plurality of pixels.
Abstract:
A radiation sensor (20) has a substrate (34); an antenna (24) coupled to the substrate (34), a thermal detector unit TDU (22) spaced from the antenna (24) and the substrate (34); and a multi-layered conductive lead (30). The conductive lead (30) physically contacts the antenna (24) and the TDU (22). The conductive lead (30) defines a support layer (44) adjacent to the substrate (34) for structurally supporting the TDU (22) over a cavity defined by the substrate (34), a buffer layer (46) disposed on the support layer (44), and a superconductive layer (48) disposed on the buffer layer (46). The buffer layer has a crystalline structure to facilitate bonding with other layers. A method for making the sensor (20) is disclosed wherein the superconductive layer (48) and the buffer layer (46) are deposited using laser deposit, the buffer layer (46) with ion beam assist for alignment.
Abstract:
A temperature determining device is composed of a temperature detecting unit that detects a temperature of a determination object member based on an intensity of infrared rays from the object member, a unit for determining a temperature for correction that determines a temperature of an opposing member opposed to the object member or a temperature of a member whose temperature changes in correlation to a change in the temperature of the opposing member, and a calculating unit that corrects the detected temperature obtained by the temperature detecting unit using the temperature as the temperature for correction obtained by the unit for determining a temperature for correction. Thus, stable temperature determination can be performed accurately without being influenced by infrared rays from around a determination object member.
Abstract:
A test wafer for use in wafer temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and light absorption film formed over the second semiconductor layer. Next, the test wafer is loaded into a lamp heating system and then irradiating the test wafer with a light emitted from the lamp, thereby heating the second semiconductor layer through the light absorption film. Thereafter, a recovery rate, at which a part of the second semiconductor layer recovers from the amorphous state to the crystalline state at the interface with the first semiconductor layer, is calculated. Then, a temperature of the test wafer that has been irradiated with the light is measured according to a relationship between the recovery rate and a temperature corresponding to the recovery rate.
Abstract:
In an area of a diaphragm 5 as an infrared photosensitive portion of a thermal infrared detector, a fourth dielectric protective film 8c is etched and reduced in thickness to form a fifth dielectric protective film 8d so that the thickness of the diaphragm 5 as a whole is reduced. With this structure, the thermal capacity of the diaphragm 5 is decreased and the thermal time constant is reduced. This enables the thermal infrared detector to be operated at a high frame rate. A bolometer thin film 7 is formed throughout an entire surface of the diaphragm 5.
Abstract:
A sensor includes a detector for detecting physical quantity, a membrane, and a stress relaxation area. A stress is expected to concentrate in the stress relaxation area in a case of manufacturing process of the sensor or a case of operating the sensor. The detector is disposed on the membrane except for the stress relaxation area.