Radiation sensor with synchronous reset
    171.
    发明申请
    Radiation sensor with synchronous reset 审中-公开
    带同步复位的辐射传感器

    公开(公告)号:US20040195510A1

    公开(公告)日:2004-10-07

    申请号:US10359312

    申请日:2003-02-07

    Abstract: This invention consists of a radiation sensor with a thermal cycling and synchronous readout scheme. It is intended for use with pyro-optical materials which exhibit a phase transition that is hysteric. A preferred material is vanadium oxide which has a semiconductor-metal phase transition typically at 68 deg C. and a hysteresis of a few degrees C. depending on material processing. The temperature of the pyro-optical film is cycled in synchronization with readout electronics to achieve a reset reference for the readout once each repetitive cycle. When the thermal cycle is divided into two regions, a reference and a biased frame are obtained. The readout electronics compare the reference frame the biased frame to obtain a desired difference which is an unbiased frame.

    Abstract translation: 本发明由具有热循环和同步读出方案的辐射传感器组成。 它适用于表现出歇斯底里相变的热光材料。 优选的材料是氧化钒,其通常在68℃下具有半导体 - 金属相变,并且根据材料加工具有几度的滞后。 热释光膜的温度与读出电子装置同步循环,以实现每次重复循环一次读数的复位参考。 当热循环被分成两个区域时,获得参考和偏置帧。 读出电路将参考帧与偏置帧进行比较以获得期望的差值,该差值是无偏差的帧。

    Instrument for temperature and condition monitoring of advanced turbine blades
    172.
    发明申请
    Instrument for temperature and condition monitoring of advanced turbine blades 审中-公开
    先进的涡轮叶片的温度和状态监测仪器

    公开(公告)号:US20040179575A1

    公开(公告)日:2004-09-16

    申请号:US10755424

    申请日:2004-01-12

    Inventor: James R. Markham

    Abstract: An on-engine radiation thermometer that simultaneously measures, through a common optical waveguide probe, long wavelength infrared radiation and short wavelength radiation, enables accurate temperature measurement and condition monitoring of ceramic thermal barrier coatings used on metal blades of gas turbine engines. This in turn enables operation at higher combustion temperatures, thereby optimizing coating use, and provides warning signals that are indicative of potential blade failure due to barrier coating spall and other conditions.

    Abstract translation: 通过普通光波导探头同时测量长波长红外辐射和短波长辐射的发动机内辐射温度计能够对燃气轮机发动机金属叶片上使用的陶瓷热障涂层进行精确的温度测量和状态监测。 这又能够在更高的燃烧温度下操作,从而优化涂层使用,并且提供警告信号,其指示由于阻隔涂层剥落和其它条件引起的潜在的叶片故障。

    PIR motion sensor
    173.
    发明申请
    PIR motion sensor 有权
    PIR运动传感器

    公开(公告)号:US20040169145A1

    公开(公告)日:2004-09-02

    申请号:US10600314

    申请日:2003-06-20

    Inventor: Eric Scott Micko

    CPC classification number: G08B29/183 G08B13/19

    Abstract: A passive infrared sensor uses two detectors having elements of different configurations such that each element outputs a respective frequency when an object moves in front of it. Based on the presence of two frequencies with similar peak and/or slope characteristics, a motion signal is output to, e.g., activate an alarm. In another embodiment the detectors have plural elements with the elements of one detector being wired in a dimension that is orthogonal to the dimension in which the elements of the other detector are wired. The signals from the detectors are combined to determine motion and size of object. The detector elements can also be configured differently from each other as in the first embodiment, and the polarities of signals can be used to determine direction of motion. In yet another embodiment the detectors can be of the same size but have optics of different focal lengths.

    Abstract translation: 被动红外传感器使用具有不同构造元件的两个检测器,使得当物体在其前方移动时,每个元件输出相应的频率。 基于具有类似峰值和/或斜率特性的两个频率的存在,输出运动信号以例如激活报警。 在另一个实施例中,检测器具有多个元件,其中一个检测器的元件以与另一检测器的元件布线的尺寸正交的尺寸布线。 来自检测器的信号被组合以确定物体的运动和尺寸。 检测器元件也可以如第一实施例中那样彼此不同地配置,并且可以使用信号的极性来确定运动方向。 在另一个实施例中,检测器可以具有相同的尺寸,但是具有不同焦距的光学器件。

    Methods and devices for sensing temperature and another physical parameter with a single optical probe
    174.
    发明申请
    Methods and devices for sensing temperature and another physical parameter with a single optical probe 有权
    用于用单个光学探针感测温度和另一物理参数的方法和装置

    公开(公告)号:US20040156419A1

    公开(公告)日:2004-08-12

    申请号:US10643700

    申请日:2003-08-18

    Abstract: Optical methods and devices for measuring temperature and a secong physical parameter, using a single photoluminescent probe material comprised of a single luminophor, and methods and devices for determining temperature-corrected values of said second physical parameter, which can be an oxygen or air pressure or a parameter chosen from the group comprising an electrical current, a magnetic field and an electrical field or voltage. The luminophor is excited sequentially by a first excitation light of chosen first wavelengths and intensity P1 which generates a first luminescence light of intensity I1, and a second excitation light of chosen second wavelengths and intensity P2 which generates a second luminescence light of intensity I2. The ratio (I2.P1/I1.P2) varies substantially in a known manner with varying temperature, substantially independent of the magnitude of said second physical parameter, thus providing a temperature correction factor to the measurement of said second physical parameter.

    Abstract translation: 使用由单个发光体构成的单个光致发光探针材料以及用于确定所述第二物理参数的温度校正值的方法和装置的用于测量温度和稳定物理参数的光学方法和装置,其可以是氧气或空气压力或 从包括电流,磁场和电场或电压的组中选择的参数。 发光体通过所选择的第一波长的第一激发光和强度为P1的强度P1依次激发,该强度P1产生强度为I1的第一发光以及产生强度为I2的第二发光的所选择的第二波长和强度P2的第二激发光。 比例(I2.P1 / I1.P2)以已知的方式基本上以变化的温度变化,基本上与所述第二物理参数的幅度无关,从而为测量所述第二物理参数提供温度校正因子。

    Infrared sensor and method for making same
    175.
    发明申请
    Infrared sensor and method for making same 审中-公开
    红外线传感器及其制作方法

    公开(公告)号:US20040155188A1

    公开(公告)日:2004-08-12

    申请号:US10479850

    申请日:2003-12-08

    CPC classification number: H01L27/16

    Abstract: The invention concerns an infrared sensor (2) comprising a plurality of pixels (12) having a structured layer (20) for infrared light absorption located at the sensor upper surface. The invention is characterised in that the absorption layer (20) is formed of colloidal particles, in particular graphite or metal oxide wafers embedded or sealed in a binder. The method for making such a sensor consists in forming the structured layer by deposit of the colloidal particles in accordance with a standard technique and then in eliminating partly the thus formed absorption layer to obtain a plurality of elementary absorption zones respectively associated with the plurality of pixels.

    Abstract translation: 本发明涉及一种包括多个像素(12)的红外传感器(2),其具有位于传感器上表面的用于红外光吸收的结构化层(20)。 本发明的特征在于,吸收层(20)由胶体颗粒形成,特别是嵌入或密封在粘合剂中的石墨或金属氧化物晶片。 制造这种传感器的方法在于通过根据标准技术沉积胶体颗粒来形成结构化层,然后部分地消除如此形成的吸收层,以获得分别与多个像素相关联的多个基本吸收区域 。

    Passive millimeter wave sensor using high temperature superconducting leads
    176.
    发明申请
    Passive millimeter wave sensor using high temperature superconducting leads 有权
    无源毫米波传感器采用高温超导导线

    公开(公告)号:US20040140429A1

    公开(公告)日:2004-07-22

    申请号:US10727187

    申请日:2003-12-02

    Abstract: A radiation sensor (20) has a substrate (34); an antenna (24) coupled to the substrate (34), a thermal detector unit TDU (22) spaced from the antenna (24) and the substrate (34); and a multi-layered conductive lead (30). The conductive lead (30) physically contacts the antenna (24) and the TDU (22). The conductive lead (30) defines a support layer (44) adjacent to the substrate (34) for structurally supporting the TDU (22) over a cavity defined by the substrate (34), a buffer layer (46) disposed on the support layer (44), and a superconductive layer (48) disposed on the buffer layer (46). The buffer layer has a crystalline structure to facilitate bonding with other layers. A method for making the sensor (20) is disclosed wherein the superconductive layer (48) and the buffer layer (46) are deposited using laser deposit, the buffer layer (46) with ion beam assist for alignment.

    Abstract translation: 辐射传感器(20)具有基板(34); 耦合到所述衬底(34)的天线(24),与所述天线(24)和所述衬底(34)间隔开的热检测器单元TDU(22); 和多层导电引线(30)。 导电引线(30)物理地接触天线(24)和TDU(22)。 导电引线(30)限定与衬底(34)相邻的支撑层(44),用于在由衬底(34)限定的空腔上结构地支撑TDU(22);缓冲层(46),设置在支撑层 (44)和设置在缓冲层(46)上的超导层(48)。 缓冲层具有便于与其它层结合的晶体结构。 公开了一种用于制造传感器(20)的方法,其中使用激光沉积沉积超导层(48)和缓冲层(46),缓冲层(46)具有用于对准的离子束辅助。

    Temperature determining device, temperature correcting method, and image forming apparatus
    177.
    发明申请
    Temperature determining device, temperature correcting method, and image forming apparatus 有权
    温度测定装置,温度校正方法和图像形成装置

    公开(公告)号:US20040109490A1

    公开(公告)日:2004-06-10

    申请号:US10726965

    申请日:2003-12-02

    CPC classification number: G01J5/16

    Abstract: A temperature determining device is composed of a temperature detecting unit that detects a temperature of a determination object member based on an intensity of infrared rays from the object member, a unit for determining a temperature for correction that determines a temperature of an opposing member opposed to the object member or a temperature of a member whose temperature changes in correlation to a change in the temperature of the opposing member, and a calculating unit that corrects the detected temperature obtained by the temperature detecting unit using the temperature as the temperature for correction obtained by the unit for determining a temperature for correction. Thus, stable temperature determination can be performed accurately without being influenced by infrared rays from around a determination object member.

    Abstract translation: 温度测定装置由温度检测单元构成,该温度检测单元基于来自对象构件的红外线的强度来检测判定对象构件的温度,确定用于校正的温度的单元,其确定与该对象构件相对的对置构件的温度 对象构件或其温度随着相对构件的温度变化而变化的构件的温度,以及计算单元,其使用温度作为校正温度来校正由温度检测单元获得的检测温度作为校正温度, 用于确定校正温度的单位。 因此,可以在不受确定对象构件周围的红外线影响的情况下准确地进行稳定的温度测定。

    Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system

    公开(公告)号:US20040109489A1

    公开(公告)日:2004-06-10

    申请号:US10600596

    申请日:2003-06-23

    CPC classification number: G01K11/00

    Abstract: A test wafer for use in wafer temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and light absorption film formed over the second semiconductor layer. Next, the test wafer is loaded into a lamp heating system and then irradiating the test wafer with a light emitted from the lamp, thereby heating the second semiconductor layer through the light absorption film. Thereafter, a recovery rate, at which a part of the second semiconductor layer recovers from the amorphous state to the crystalline state at the interface with the first semiconductor layer, is calculated. Then, a temperature of the test wafer that has been irradiated with the light is measured according to a relationship between the recovery rate and a temperature corresponding to the recovery rate.

    Thermal infrared detector having a small thermal time constant and method of producing the same
    179.
    发明申请
    Thermal infrared detector having a small thermal time constant and method of producing the same 失效
    具有小的热时间常数的热红外探测器及其制造方法

    公开(公告)号:US20040089807A1

    公开(公告)日:2004-05-13

    申请号:US10697155

    申请日:2003-10-31

    CPC classification number: G01J5/20 G01J2005/202

    Abstract: In an area of a diaphragm 5 as an infrared photosensitive portion of a thermal infrared detector, a fourth dielectric protective film 8c is etched and reduced in thickness to form a fifth dielectric protective film 8d so that the thickness of the diaphragm 5 as a whole is reduced. With this structure, the thermal capacity of the diaphragm 5 is decreased and the thermal time constant is reduced. This enables the thermal infrared detector to be operated at a high frame rate. A bolometer thin film 7 is formed throughout an entire surface of the diaphragm 5.

    Abstract translation: 在作为热红外线检测器的红外感光部分的隔膜5的区域中,蚀刻第四介电保护膜8c并减小厚度,以形成第五绝缘保护膜8d,使得隔膜5的整体厚度为 减少 利用这种结构,膜片5的热容量减小,并且热时间常数降低。 这使得热红外检测器能够以高帧速率运行。 在隔膜5的整个表面上形成测辐射热计薄膜7。

    Sensor having membrane
    180.
    发明申请
    Sensor having membrane 失效
    传感器有膜

    公开(公告)号:US20040079885A1

    公开(公告)日:2004-04-29

    申请号:US10653067

    申请日:2003-09-03

    CPC classification number: G01J5/12

    Abstract: A sensor includes a detector for detecting physical quantity, a membrane, and a stress relaxation area. A stress is expected to concentrate in the stress relaxation area in a case of manufacturing process of the sensor or a case of operating the sensor. The detector is disposed on the membrane except for the stress relaxation area.

    Abstract translation: 传感器包括用于检测物理量的检测器,膜和应力松弛区域。 在传感器的制造过程或操作传感器的情况下,应力应力集中在应力松弛区域中。 除了应力松弛区域之外,检测器设置在膜上。

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