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    LARGE-AREA GRAPHENE TRANSFER METHOD
    182.
    发明申请
    LARGE-AREA GRAPHENE TRANSFER METHOD 审中-公开
    大面积石墨转移方法

    公开(公告)号：US20160137507A1

    公开(公告)日：2016-05-19

    申请号：US14547551

    申请日：2014-11-19

    Applicant: INSTITUTE FOR BASIC SCIENCE ,  UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION

    Inventor： Xuequi YOU ,  Da Luo ,  Rodney S. Ruoff

    IPC: C01B31/04 ,  B32B37/00 ,  B32B9/00

    CPC classification number: B32B9/007 ,  B32B37/025 ,  B32B2309/02 ,  B32B2313/04 ,  B32B2457/00 ,  B32B2457/20 ,  C01B32/194 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262

    Abstract: A graphene transfer method using water vapor-assisted determination of CVD-grown graphene film on the Cu foil. By using the polymer film as a supporting layer, we found that graphene can be directly detached from the Cu foil as a consequence of water intercalated at the graphene-Cu interface(s), by a ‘dry transfer’ method. The delaminated graphene films are continuous over large area. This nondestructive method also worked for the transfer of graphene grown on a Cu single crystal without sacrificing the expensive crystal, thus affording the possibility of producing high-quality graphene and reusing the substrate. The Cu foil and single crystal can both be repeatedly used for many times, which may reduce the cost of graphene synthesis and is environmentally more benign. Our method affords the advantages of high efficiency, likely industrial scalability, minimal use of chemicals, and the reusability of the Cu foil in multiple growth and delamination cycles.

    Abstract translation: 在Cu箔上使用水蒸汽辅助测定CVD生长的石墨烯膜的石墨烯转移方法。 通过使用聚合物膜作为支撑层，我们发现石墨烯可以通过“干转移”方法由于在石墨烯 - Cu界面插入的水而与Cu箔直接分离。 分层的石墨烯薄膜在大面积上是连续的。 这种非破坏性方法也用于转移在Cu单晶上生长的石墨烯，而不牺牲昂贵的晶体，从而提供生产高质量石墨烯和重新使用基底的可能性。 Cu箔和单晶可以重复使用多次，这可能降低石墨烯合成的成本，并且环境更好。 我们的方法提供了高效率，可能的工业可扩展性，化学品的最小使用以及Cu箔在多个生长和分层循环中的可重用性的优点。

    METHOD AND APPARATUS FOR GENERATING CARDIAC LEFT VENTRICULAR THREE-DIMENSIONAL IMAGE
    183.
    发明申请
    METHOD AND APPARATUS FOR GENERATING CARDIAC LEFT VENTRICULAR THREE-DIMENSIONAL IMAGE 审中-公开
    用于产生心脏左心室三维图像的方法和装置

    公开(公告)号：US20150366533A1

    公开(公告)日：2015-12-24

    申请号：US14741155

    申请日：2015-06-16

    Applicant: Institute for Basic Science

    Inventor： Chi Young Ahn ,  Ki Wan Jeon ,  Sang Woon Yun

    IPC: A61B8/08 ,  A61B8/14 ,  A61B8/00

    CPC classification number: A61B8/0883 ,  A61B8/466 ,  A61B8/5223 ,  G06T7/0012 ,  G06T2207/30048

    Abstract: Disclosed is a method for generating a 3D image of a left ventricle of the heart. The method includes: acquiring, by an image processor, a 2D left ventricle image; extracting, by the image processor, left ventricle boundary coordinates from the 2D image; calculating, by a controller, a position of the left ventricle in 3D space through transformation of the extracted left ventricle boundary coordinates; and generating, by the controller, a 3D left ventricle image based on the calculated position of the left ventricle in 3D space.

    Abstract translation: 公开了一种用于产生心脏左心室的3D图像的方法。 该方法包括：由图像处理器获取2D左心室图像; 由图像处理器从2D图像提取左心室边界坐标; 通过转换所提取的左心室边界坐标，由控制器计算3D空间中左心室的位置; 以及由所述控制器基于所计算的3D空间中左心室的位置生成3D左心室图像。

    APPARATUS FOR FIXING SAMPLE AND MANUFACTURING METHOD THEREFOR
    185.
    发明申请
    APPARATUS FOR FIXING SAMPLE AND MANUFACTURING METHOD THEREFOR 有权

    公开(公告)号：US20250164361A1

    公开(公告)日：2025-05-22

    申请号：US18294111

    申请日：2022-06-13

    Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION ,  INSTITUTE FOR BASIC SCIENCE

    Inventor： Jungwon PARK ,  Min-Ho KANG

    IPC: G01N1/31

    Abstract: An apparatus for fixing sample and a manufacturing method therefor are provided. The apparatus for fixing sample according to the embodiments of the present invention comprises a substrate having a window hole, a first pattern disposed on the substrate and having a sample fixing hole, and a window layer disposed below the first pattern in the window hole. The sample fixing hole is disposed on the window layer. The method for manufacturing an apparatus for fixing sample comprises preparing a substrate having a first surface and a second surface, forming a first layer on the first surface and a second layer on the second surface, patterning the second layer to form a second pattern, etching the substrate using the second pattern as an etching mask to form a window hole exposing the first layer, patterning the first layer to form a first pattern having a sample fixing hole, and forming a window layer contacting the first pattern in the window hole. The sample fixing hole is formed at a position corresponding to the window hole.

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