公开(公告)号：KR1020130089350A

公开(公告)日：2013-08-12

申请号：KR1020120010638

申请日：2012-02-02

Applicant: 한국에너지기술연구원

Inventor： 어영주 ,  윤경훈 ,  윤재호 ,  신기식 ,  곽지혜 ,  안세진 ,  안승규 ,  조준식 ,  유진수 ,  조아라 ,  박상현 ,  박주형

IPC: H01L31/0749 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a CI(G)S-based thin film for a solar cell by using flux with a low melting point and the CI(G)S-based thin film manufactured by the same are provided to reduce manufacturing costs by selenization at low temperatures. CONSTITUTION: CI(G)S-based nanoparticles are manufactured. The CI(G)S-based nanoparticles and slurry including flux with a melting point between 30 and 400 degrees centigrade are manufactured. A CI(G)S-based precursor thin film is formed by coating the slurry on a substrate without a vibration. The CI(G)S-based precursor thin film is dried. The CI(G)S-based precursor thin film is selenized by using selenium steam. [Reference numerals] (AA) Start; (BB) Manufacture CI(G)S nanoparticles; (CC) Manufacture slurry; (DD) Non-vibration coating; (EE) Dry; (FF) Selenization and thermal process; (GG) Step a; (HH) Step b; (II) Step c; (JJ) Step d; (KK) Step e; (LL) End

Abstract translation: 目的：通过使用低熔点的助熔剂和其制造的CI（G）S系薄膜，制造用于太阳能电池的CI（G）S系薄膜的方法，以降低制造成本 低温硒化。 构成：制造CI（G）S基纳米粒子。 制造了CI（G）S型纳米粒子和包含熔点在30-400摄氏度之间的焊剂的浆料。 通过在没有振动的情况下将浆料涂布在基板上形成CI（G）S基前体薄膜。 将CI（G）S基前体薄膜干燥。 通过使用硒蒸汽对CI（G）S基前体薄膜进行硒化。 （附图标记）（AA）开始; （BB）制造CI（G）S纳米颗粒; （CC）制造浆料; （DD）无振动涂层; （EE）干燥; （FF）硒化和热处理; （GG）步骤a; （HH）步骤b; （二）步骤c; （JJ）步骤d; （KK）步骤e; （LL）结束

公开(公告)号：KR101178496B1

公开(公告)日：2012-09-07

申请号：KR1020110098571

申请日：2011-09-28

Applicant: 한국에너지기술연구원

Inventor： 조준식 ,  박상현 ,  윤재호 ,  박주형 ,  신기식 ,  유진수 ,  윤경훈

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02327 ,  H01L31/1888 ,  Y02E10/50

Abstract: PURPOSE: A transparent conductive film and a manufacturing method thereof are provided to improve electrical characteristics and light capture performance by forming surface texture on a light capture layer. CONSTITUTION: A light transmission layer(10) is formed on a substrate(100). A light capture layer(20) is formed on the light transmission layer. A surface texture structure is formed by etching the surface of the light capture layer. The light transmission layer is formed by evaporating a transparent conductive thin film of a ZnO system at the temperature greater than or equal to 300°C. The light capture layer is formed by evaporating the transparent conductive thin film of the ZnO system at the temperature less than 300°C.

Abstract translation: 目的：提供透明导电膜及其制造方法，以通过在光捕获层上形成表面纹理来改善电特性和光捕获性能。 构成：在基板（100）上形成有透光层（10）。 在光透射层上形成光捕获层（20）。 通过蚀刻光捕获层的表面形成表面纹理结构。 光传输层通过在300℃以上的温度下蒸发ZnO系的透明导电薄膜来形成。 光捕获层通过在低于300℃的温度下蒸发ZnO系的透明导电薄膜而形成。