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181.发明申请公开(公告)号：US20160225941A1
公开(公告)日：2016-08-04
申请号：US15096802
申请日：2016-04-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/007 , H01L33/02 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2933/0033 , H01S5/021 , H01S5/0213 , H01S5/32341 , H01S2301/173
Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Abstract translation: 提供了包括部分松弛的半导体层的发光异质结构。 可以包括部分松弛的半导体层作为发光异质结构的接触半导体层的子层。 也可以在部分松弛的半导体层附近包含位错阻挡结构。
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公开(公告)号：US09324560B2
公开(公告)日：2016-04-26
申请号：US14660125
申请日：2015-03-17
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/22 , G06F17/5068 , G06F2217/12 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02617 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32 , H01L2224/16225
Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.
Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。 基本平坦的顶表面中的一个或多个可以基于目标辐射进行图案化。
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公开(公告)号：US20160111618A1
公开(公告)日：2016-04-21
申请号：US14706141
申请日：2015-05-07
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska
CPC classification number: H01L33/641 , H01L33/005 , H01L33/02
Abstract: A heterostructure for use in fabricating an optoelectronic device with improved thermal management is provided. The heterostructure can include a plurality of epitaxially grown layers including an n-type contact layer, an active layer, and a p-type contact layer. N-type and p-type electrodes for the n-type contact layer and p-type contact layer, respectively, can be embedded within an electrically insulating, thermally conductive semiconductor layer that is adjacent to the epitaxially grown layers. The electrically insulating, thermally conductive semiconductor layer can provide a larger lateral area for extracting heat generated by the active layer, so that there is improved thermal management within the device.
Abstract translation: 提供了用于制造具有改进的热管理的光电子器件的异质结构。 异质结构可以包括包括n型接触层，有源层和p型接触层的多个外延生长层。 分别用于n型接触层和p型接触层的N型和p型电极可以嵌入在与外延生长层相邻的电绝缘的导热半导体层中。 电绝缘导热半导体层可以提供更大的横向面积来提取由有源层产生的热量，从而改善了器件内的热管理。
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184.发明申请High-Voltage Normally-Off Field Effect Transistor With Channel Having Multiple Adjacent Sections 有权具有多个相邻截面的通道的高电压常关场效应晶体管公开(公告)号：US20160111497A1
公开(公告)日：2016-04-21
申请号：US14984408
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Remigijus Gaska
CPC classification number: H01L29/66681 , H01L29/0619 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/4175 , H01L29/41758 , H01L29/42316 , H01L29/4236 , H01L29/42364 , H01L29/7786
Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
Abstract translation: 提供具有多个电压阈值的通道的装置。 通道可以包括位于与作为常开通道的源电极相邻的第一部分和位于第一部分和作为常开通道的漏电极之间的第二部分。 该装置可以包括连接到源电极的电荷控制电极，其从源电极延伸到通道的第二部分的至少一部分上。 在器件工作期间，充电控制电极和通道之间的电位差可以控制通道的常开部分的开/关状态。
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公开(公告)号：US20160104784A1
公开(公告)日：2016-04-14
申请号：US14973563
申请日：2015-12-17
Applicant: Sensor Electronic Technology, Inc.
Inventor： Remigijus Gaska , Michael Shur , Jinwei Yang , Alexander Dobrinsky , Maxim S. Shatalov
IPC: H01L29/45 , H01L29/15 , H01L29/20 , H01L33/40 , H01L29/737 , H01L33/06 , H01L33/14 , H01L33/32 , H01L21/285 , H01L29/205
CPC classification number: H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/401 , H01L29/66431 , H01L29/66462 , H01L29/737 , H01L29/778 , H01L29/7786 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/405 , H01L2933/0016
Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
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Patent Agency Ranking
186.发明授权公开(公告)号：US09312428B2
公开(公告)日：2016-04-12
申请号：US14150930
申请日：2014-01-09
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/007 , H01L33/02 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2933/0033 , H01S5/021 , H01S5/0213 , H01S5/32341 , H01S2301/173
Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Abstract translation: 提供了包括部分松弛的半导体层的发光异质结构。 可以包括部分松弛的半导体层作为发光异质结构的接触半导体层的子层。 也可以在部分松弛的半导体层附近包含位错阻挡结构。
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公开(公告)号：US20160071938A1
公开(公告)日：2016-03-10
申请号：US14942004
申请日：2015-11-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Remigijus Gaska
IPC: H01L29/40 , H01L29/78 , H01L29/778 , G06F17/50
CPC classification number: H01L29/408 , G06F17/5068 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/778 , H01L29/7786 , H01L29/78 , H01L29/872
Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.
Abstract translation: 提供具有防分解层的半导体器件。 防破坏层可以位于器件的高压表面区域中。 防破坏层可以包括其中嵌入有导电元件的绝缘膜。 导电元件可以沿着绝缘膜的横向长度布置。 导电元件可以被配置为在设备操作期间将高电场尖峰分裂成另外存在于高电压表面区域中的多个更小的尖峰。
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公开(公告)号：US20160000953A1
公开(公告)日：2016-01-07
申请号：US14853105
申请日：2015-09-14
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： Timothy James Bettles , Yuri Bilenko , Saulius Smetona , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.
Abstract translation: 提供了一种消毒电子设备的解决方案。 紫外线辐射源嵌入紫外线吸收剂盒内。 当电子设备在紫外线吸收剂盒内时，超低辐射被引导到电子设备。 监视和控制系统监视电子设备的多个属性，其可以包括：设备的使用频率，设备表面的生物活动以及设备的消毒调度历史。 此外，监控系统可以检测设备是否被使用。 基于监控，监控系统控制指向电子设备的紫外线辐射。
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公开(公告)号：US20150364443A1
公开(公告)日：2015-12-17
申请号：US14834606
申请日：2015-08-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Yuri Bilenko , Michael Shur , Remigijus Gaska , Alexander Dobrinsky
CPC classification number: H01L23/49541 , H01L21/78 , H01L23/49562 , H01L23/49575 , H01L24/81 , H01L24/94 , H01L25/072 , H01L25/075 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/1403 , H01L2224/16245 , H01L2224/48091 , H01L2224/81191 , H01L2224/94 , H01L2924/01322 , H01L2924/12 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/13 , H01L2933/0066 , H01L2924/00 , H01L2224/81
Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
Abstract translation: 提供了用于封装诸如发光二极管的两个终端设备的解决方案。 在一个实施例中，一种封装双端子器件的方法包括：图案化金属片以包括多个开口; 将至少一个两个端子装置接合到所述金属板，其中第一开口对应于所述至少一个两个端子装置的第一触点和第二触点之间的距离; 以及围绕所述至少一个两端子装置中的每一个切割所述金属片，其中所述金属片形成到所述第一接触件的第一电极和到所述第二接触件的第二电极。
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公开(公告)号：US20150344329A1
公开(公告)日：2015-12-03
申请号：US14729236
申请日：2015-06-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Saulius Smetona , Timothy James Bettles , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: C02F1/32
CPC classification number: C02F1/325 , C02F2201/3221 , C02F2201/3222 , C02F2201/328 , C02F2303/04
Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.
Abstract translation: 提供了一种使用紫外线辐射消毒液体，胶体，混合物等的溶液。 紫外线透明外壳可包括用于要消毒的介质流的入口和出口。 紫外线透明外壳包括被配置为防止紫外线透明外壳内的生物污损的材料。 一组紫外线辐射源位于紫外线透明外壳附近，并被配置为产生朝向紫外线透明外壳的紫外线辐射。
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