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    Process for making opaque quartz, for carrying out the process suitable SiO2 granulate, and component of opaque quartz glass
    181.
    发明授权
    Process for making opaque quartz, for carrying out the process suitable SiO2 granulate, and component of opaque quartz glass 有权
    制造不透明石英的方法，用于进行适合SiO 2颗粒的工艺，以及不透明石英玻璃的组分

    公开(公告)号：US06380110B1

    公开(公告)日：2002-04-30

    申请号：US09484113

    申请日：2000-01-14

    Applicant: Waltraud Werdecker ,  Heinz Fabian ,  Udo Gertig ,  Johann Leist ,  Rolf Göbel

    Inventor： Waltraud Werdecker ,  Heinz Fabian ,  Udo Gertig ,  Johann Leist ,  Rolf Göbel

    IPC: C03B2000

    CPC classification number: C03C1/026 ,  C03B19/1065 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/24 ,  C03C2201/26 ,  C03C2201/32 ,  C03C2201/80 ,  C03C2203/10 ,  C03C2203/54

    Abstract: In a known process for the production of opaque quartz glass a blank is formed from synthetic SiO2 granulate and is heated at a vitrification temperature to form a body of opaque quartz glass. In order to provide on this basis a process for the production of pure opaque quartz glass with a homogenous pore distribution, high density, high viscosity and a low tendency to devitrify, it is proposed according to the invention that the SiO2 granulate to be used is a SiO2 granulate (21; 31) composed of at least partially porous agglomerates of SiO2 primary particles, with a specific BET surface ranging from 1.5 m2/g to 40 m2/g and an apparent density of at least 0.8 g/cm3. A SiO2 granulate (21; 31) suitable for the implementation of the process is distinguished in that it is formed from at least partially porous agglomerates of SiO2 primary particles and in that it has a specific BET surface ranging from 1.5 m2/g to 40 m2/g and an apparent density of at least 0.6 g/cm3.

    Abstract translation: 在制造不透明石英玻璃的已知方法中，由合成SiO 2颗粒形成坯料，并在玻璃化温度下加热以形成不透明石英玻璃体。 为了在此基础上提供具有均匀孔分布，高密度，高粘度和低失透倾向的纯不透明石英玻璃的制备方法，根据本发明提出使用的SiO 2颗粒是 SiO 2颗粒（21; 31），其由SiO 2一次颗粒的至少部分多孔的附聚物组成，BET比表面积为1.5m 2 / g至40m 2 / g，表观密度为至少0.8g / cm 3。 适用于实施该方法的SiO 2颗粒（21; 31）的特征在于其由SiO 2一次颗粒的至少部分多孔的附聚物形成，并且其具有范围为1.5m 2 / g至40m 2的比BET表面积 / g，表观密度为0.6g / cm 3以上。

    Method of producing cristobalite containing silica glass
    185.
    发明授权
    Method of producing cristobalite containing silica glass 失效
    生产含方石英的石英玻璃的方法

    公开(公告)号：US5876473A

    公开(公告)日：1999-03-02

    申请号：US727552

    申请日：1996-10-25

    Applicant: Kyoichi Inaki ,  Tohru Segawa ,  Nobumasa Yoshida ,  Mamoru Endo

    Inventor： Kyoichi Inaki ,  Tohru Segawa ,  Nobumasa Yoshida ,  Mamoru Endo

    IPC: C03B20/00 ,  C03B32/02 ,  C03C3/06 ,  C03C14/00 ,  C03B5/00 ,  C03C10/14

    CPC classification number: C03C14/004 ,  C03B20/00 ,  C03B32/02 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/80 ,  C03C2214/20 ,  C03C2214/30

    Abstract: Cristobalite-containing silica glass is provided wherein .alpha.-cristobalite in the shape of a small sphere or a small, round-edged or sharp-edged, three-dimensional region is dispersed in the silica glass matrix. The diameter of each .alpha.-cristobalite sphere or region is, in the range of 0.1 um to 1000 um, and the content of the .alpha.-cristobalite is at least 10 wt. %. The cristobalite-containing silica glass is produced by heating a mixture of two kinds or more of crystalline silicon dioxide powder with melting points different from each other by 20.degree. C. or more. The mixture contains silicon dioxide having the highest melting point in the range of 10 wt. % to 80 Wt. % and is heated at temperatures ranging from the lowest melting point to a temperature lower than the highest melting point.

    Abstract translation: PCT No.PCT / EP96 / 00794 Sec。 371日期1996年10月25日第 102（e）日期1996年10月25日PCT 1996年2月27日PCT公布。 公开号WO96 / 26908 日本1996年9月6日提供了含方石英的二氧化硅玻璃，其中将小球形或小圆形边缘或锐边三维区域形成的α-方英石分散在石英玻璃基质中。 每个α-方解石球体或区域的直径在0.1μm至1000μm的范围内，并且α-方英石的含量为至少10wt。 ％。 通过将两种以上的结晶二氧化硅粉末的熔点彼此不同的混合物加热20℃以上来制造含方石英的石英玻璃。 该混合物含有熔点最高在10wt。％范围内的二氧化硅。 至80 Wt。 并且在从最低熔点到低于最高熔点的温度的温度下加热。

    Process for producing opaque silica glass
    186.
    发明授权
    Process for producing opaque silica glass 失效
    生产不透明石英玻璃的方法

    公开(公告)号：US5772714A

    公开(公告)日：1998-06-30

    申请号：US682962

    申请日：1996-07-18

    Applicant: Tatsuhiro Sato ,  Akira Fujinoki ,  Kyoichi Inaki ,  Nobumasa Yoshida ,  Tohru Yokota

    Inventor： Tatsuhiro Sato ,  Akira Fujinoki ,  Kyoichi Inaki ,  Nobumasa Yoshida ,  Tohru Yokota

    IPC: C03B5/02 ,  C03B5/08 ,  C03B19/09 ,  C03B20/00 ,  C03C3/06

    CPC classification number: C03B5/08 ,  C03B19/09 ,  C03B20/00 ,  C03B5/021 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/80 ,  Y10S501/904 ,  Y10S501/905 ,  Y10T428/249969

    Abstract: A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature. Especially, in the case of producing a large scale opaque silica glass block, a quartz raw material grain filled into a heat-resistant mold is heated by a belt-like heating source located perpendicularly to a trunk of a filling layer of the quartz raw material grain so as to form a moving heating zone in the filling layer and the heating zone is successively moved either upwardly starting at the lower end portion of the filling layer or downwardly starting at the upper end portion thereof in a non-oxidizing atomosphere.

    Abstract translation: 将具有10〜350μm粒径的石英原料颗粒填充到耐热性模具中的不透明石英玻璃的制造方法，将石英原料颗粒从室温下在非氧化性气氛中加热 比上述原料颗粒以不超过50℃/分钟的升温速度熔化的温度低于50℃至150℃的温度，然后缓慢加热至高于10℃的温度 相对于石英原料粒子以10℃/分钟以下的速度熔融的温度为80℃以下，加热的石英原料粒子进一步保持在10〜80℃ 比石英原料晶粒熔化的温度高，然后冷却至室温。 特别是，在生产大型不透明石英玻璃块的情况下，填充在耐热性模具中的石英原料颗粒通过垂直于石英原料填充层的树干的带状加热源加热 从而在填充层中形成移动的加热区域，并且加热区域从填充层的下端部开始向上移动，或者从非氧化性空气的上端向下移动。

    Sol-gel process for providing a tailored gel microstructure
    187.
    发明授权
    Sol-gel process for providing a tailored gel microstructure 失效
    溶胶 - 凝胶法用于提供定制的凝胶微观结构

    公开(公告)号：US5264197A

    公开(公告)日：1993-11-23

    申请号：US811326

    申请日：1991-12-20

    Applicant: Shiho Wang ,  Satyabrata Raychaudhuri ,  Arnab Sarkar

    Inventor： Shiho Wang ,  Satyabrata Raychaudhuri ,  Arnab Sarkar

    IPC: C01B33/152 ,  C01B33/158 ,  C03B8/02 ,  C03B19/12 ,  C03C1/00 ,  C03C3/06 ,  B01J13/00

    CPC classification number: C03B19/12 ,  C01B33/1585 ,  C03C1/006 ,  C03C3/06 ,  C03C2201/02 ,  C03C2203/26

    Abstract: An improved sol-gel process for fabricating large, crack-free gel monoliths (e.g., of silica) is described in which a specially-tailored gel microstructure is provided by adjusting the relative concentrations of an alcohol diluent (e.g., ethanol) and/or one or more catalysts (e.g., HCl and HF). Controlled variations in the gel's average pore radius, bulk density, rupture modulus, and elastic modulus over a wide range can be tailored in this fashion. This enables the process to be optimized for the particular application involved.

    Abstract translation: 描述了用于制造大的无裂纹凝胶整料（例如，二氧化硅）的改进的溶胶 - 凝胶方法，其中通过调节醇稀释剂（例如乙醇）和/或 一种或多种催化剂（例如HCl和HF）。 可以以这种方式调整凝胶的平均孔半径，体积密度，断裂模量和宽范围内的弹性模量的控制变化。 这使得针对所涉及的特定应用来优化该过程。

    Process for making non-porous micron-sized high purity silica
    188.
    发明授权
    Process for making non-porous micron-sized high purity silica 失效
    制造非多孔微米级高纯度二氧化硅的方法

    公开(公告)号：US5063179A

    公开(公告)日：1991-11-05

    申请号：US490005

    申请日：1990-03-02

    Applicant: Jameel Menashi ,  Kenneth C. Koehlert

    Inventor： Jameel Menashi ,  Kenneth C. Koehlert

    IPC: C01B33/12 ,  C03C1/00 ,  C03C3/06 ,  C04B35/14

    CPC classification number: C01B33/12 ,  C03C1/006 ,  C03C3/06 ,  C04B35/14 ,  C03C2201/02

    Abstract: A process for making non-porous, dense, silica partices having a diameter of about 3 to 1000 microns, a nitrogen B.E.T. surface area less than about 1 m.sup.2 /g, a total impurity content of less than about 50 ppm and a metal impurity content content of less than about 15 ppm from an aqueous dispersion of fumed silica. The particles are converted into porous particles and sintered in an atmosphere having a water partial pressure of from about 0.2 to about 0.8 atmosphere for temperatures below about 1200.degree. C.

    Abstract translation: 一种制造直径为约3至1000微米的无孔密实二氧化硅颗粒的方法，一种氮B.E.T. 表面积小于约1m 2 / g，总杂质含量小于约50ppm，金属杂质含量小于约15ppm。 将颗粒转化成多孔颗粒并在具有约0.2至约0.8气氛的水分压的气氛中在低于约1200℃的温度下烧结。

    Devices involving silicon glasses
    190.
    发明授权
    Devices involving silicon glasses 失效
    涉及硅玻璃的设备

    公开(公告)号：US4826709A

    公开(公告)日：1989-05-02

    申请号：US161876

    申请日：1988-02-29

    Applicant: Vivian W. Ryan ,  Gerald Smolinsky

    Inventor： Vivian W. Ryan ,  Gerald Smolinsky

    IPC: C03C3/06 ,  H01L21/316 ,  B05D3/12

    CPC classification number: C03C3/06 ,  H01L21/316 ,  C03C2201/02 ,  C03C2201/10 ,  C03C2201/28 ,  C03C2203/20

    Abstract: A sol-gel process is utilized for producing silicon oxide glasses useful in the manufacture of devices such as semiconductor devices. These glasses are easily deposited by techniques such as spinning. Not only is the glass easily applied, but also has advantageous electrical, etching, and mechanical properties. Thus, these glasses are useful in applications such as passivating layers for integrated circuit devices and as intermediary layers in trilevel lithography for the production of such devices.

    Abstract translation: 溶胶 - 凝胶法用于生产用于制造诸如半导体器件的器件的氧化硅玻璃。 这些玻璃容易通过旋转技术沉积。 不仅玻璃容易应用，而且具有有利的电，蚀刻和机械性能。 因此，这些玻璃在诸如用于集成电路器件的钝化层和用于制造这种器件的三层光刻中的中间层的应用中是有用的。

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