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公开(公告)号：JP2013135436A
公开(公告)日：2013-07-08
申请号：JP2011286545
申请日：2011-12-27
Applicant: Funai Electric Co Ltd , 船井電機株式会社 , Funai Electric Advanced Applied Technology Research Institute Inc , 株式会社船井電機新応用技術研究所
Inventor： SHIMIZU NORIYUKI , TANAKA FUMINORI , UEHIGASHI NAOYA , ONO MASATOSHI
CPC classification number: H04R1/38 , H04R3/005 , H04R19/016 , H04R2201/003 , H04R2499/11
Abstract: PROBLEM TO BE SOLVED: To provide a microphone device which can detect voice output from a sound source located on the main surface side of an electronic apparatus accurately while removing noise.SOLUTION: An MEMS microphone 110 (microphone device) includes a differential vibration part 14 which detects a sound wave based on the difference of sound pressure arriving through a first sound hole 201 and a second sound hole 202, respectively. The first sound hole 201 and second sound hole 202 are provided to extend toward the side face 22 intersecting the main surface 21 of a cellular phone 100 internally mounting the differential vibration part 14. One end 201a of the first sound hole 201 and one end 202a of the second sound hole 202 are arranged so that the vertical distances from the main surface 21 of a cellular phone 100 are different from each other.
Abstract translation: 要解决的问题：提供一种麦克风装置，其能够在消除噪声的同时精确地检测位于电子设备的主表面侧的声源的声音输出。解决方案：MEMS麦克风110（麦克风装置）包括差动振动部分14 其基于分别通过第一声孔201和第二声孔202到达的声压的差异来检测声波。 第一声孔201和第二声孔202设置成朝向内部安装差动振动部分14的蜂窝电话机100的主表面21相交的侧面22延伸。第一声孔201的一端201a和一端202a 第二声孔202的布置使得与蜂窝电话100的主表面21的垂直距离彼此不同。
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14.发明专利Driving method of memory element, and storage device having memory element 有权存储器元件的驱动方法和具有存储器元件的存储器件
公开(公告)号：JP2012048780A
公开(公告)日：2012-03-08
申请号：JP2010189133
申请日：2010-08-26
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
Inventor： TAKAHASHI TAKESHI , MASUDA YUICHIRO , FURUTA SHIGEO , SUMIYA TORU , ONO MASATOSHI , HAYASHI YUTAKA , FUKUOKA TOSHIMI , SHIMIZU TETSUO , SOMU KUMARAGURUBARAN , SUGA HIROSHI , NAITO YASUHISA
IPC: G11C13/00 , H01L27/10 , H01L27/105 , H01L45/00 , H01L49/00
CPC classification number: G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
Abstract: PROBLEM TO BE SOLVED: To provide a driving method of a memory element, enabling more stable switching operations.SOLUTION: A memory element 10 comprises: an insulating substrate 1; a first electrode 2 and a second electrode 3 arranged on the insulating substrate; and an electrode gap portion 4 with a nanometer-order gap to cause a change in resistance value between the first electrode and the second electrode. In a driving method of the memory element 10 which can shift from a predetermined low resistance state to a predetermined high resistance state and can shift from the high resistance state to the low resistance state, a current pulse is applied to the memory element from a constant current circuit for shifting from the high resistance state to the low resistance state.
Abstract translation: 要解决的问题：提供一种存储元件的驱动方法，能够实现更稳定的开关操作。 存储元件10包括：绝缘基板1; 布置在所述绝缘基板上的第一电极2和第二电极3; 以及具有纳米级间隙的电极间隙部分4，以引起第一电极和第二电极之间的电阻值的变化。 在存储元件10的驱动方法中，可以从预定的低电阻状态转移到预定的高电阻状态并且可以从高电阻状态转变到低电阻状态，从存储元件的常数施加电流脉冲 用于从高电阻状态转换到低电阻状态的电流电路。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JPWO2010013532A1
公开(公告)日：2012-01-12
申请号：JP2010522651
申请日：2009-05-27
Applicant: 株式会社船井電機新応用技術研究所 , 船井電機株式会社
IPC: G02F1/15
CPC classification number: G02F1/1533 , C09K9/02 , C09K2211/187 , G02F2001/151
Abstract: 開示されるのは、第1基板10と、第1基板10の上面に設けられた第1電極20…と、第1基板10の上方に当該第1基板10に対向して設けられ、透明な材料により形成された第2基板30と、第2基板30の下面に設けられ、少なくとも一部が透明な電極材料により形成された第2電極40…と、第1基板10と第2基板30との間に設けられたエレクトロクロミック組成物層50と、を備えるエレクトロクロミック表示デバイス100において、エレクトロクロミック組成物層50は、支持電解質と、極性溶剤と、ロイコ染料と、ハイドロキノン誘導体及び/又はカテコール誘導体と、フェロセン誘導体と、カルボニル基を有する化合物と、を含むエレクトロクロミック組成物52を備えることを特徴とするエレクトロクロミック表示デバイス100である。
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Patent Agency Ranking
公开(公告)号：JP2011176211A
公开(公告)日：2011-09-08
申请号：JP2010040306
申请日：2010-02-25
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial Science & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
Inventor： MASUDA YUICHIRO , FURUTA SHIGEO , TAKAHASHI TAKESHI , ONO MASATOSHI , SHIMIZU TETSUO , NAITO YASUHISA , SUGA HIROSHI , HORIKAWA MASAYO
Abstract: PROBLEM TO BE SOLVED: To provide a three-terminal switching element composed of a simpler structure and capable of stably performing switching operation. SOLUTION: The switching element 100 includes an insulating substrate 10, a first electrode 20 and a second electrode 30 set on the insulating substrate, an inter-electrode clearance 40 formed between the first electrode and second electrode and having a nanometer order clearance making a switching phenomenon of resistance occur by applying a predetermined voltage between the first electrode and the second electrode, and a sealing member 50 sealing at least the inter-electrode clearance with gaseous oxygen filled in the inter-electrode clearance. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种由更简单的结构构成并能够稳定地执行开关操作的三端开关元件。 解决方案：开关元件100包括绝缘基板10，设置在绝缘基板上的第一电极20和第二电极30，形成在第一电极和第二电极之间并具有纳米级间隙的电极间隙40 通过在第一电极和第二电极之间施加预定的电压而产生电阻的切换现象，以及密封构件50，至少用填充在电极间隙中的气态氧密封电极间间隙。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2010261983A
公开(公告)日：2010-11-18
申请号：JP2009110286
申请日：2009-04-30
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , Tokai Univ , 学校法人東海大学 , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
Inventor： FUKUOKA TOSHIMI , OKINA TAKESHI , HIGUCHI TETSUYA , SUZUKI MASAO , TAKANO RIKUO , MENTANI MAKOTO
CPC classification number: G09G3/38 , G09G2300/06 , G09G2310/0256 , G09G2320/0209
Abstract: PROBLEM TO BE SOLVED: To achieve high speed display and high speed erasing of high quality images without having a partition wall in an electrochromic display device of a passive matrix drive. SOLUTION: In the electrochromic display device 100 of the passive matrix drive, a first electrode 20 is a plurality of electrodes extending in parallel. A second electrode 40 is a plurality of transparent display electrodes extending in parallel to a direction orthogonal to the first electrode 20. Pixels 60 are formed on a region in which the first electrode 20 and the second electrode 40 are three-dimensionally intersected. When executing display, the first electrode 20 forming selected pixels 60 is a negative electrode, the second electrode 40 forming the selected pixels 60 is a positive electrode, and a voltage of a first potential difference is applied across the electrodes. Just after it, the first electrode 20 is a positive electrode, the second electrode 40 is a negative electrode, and a voltage of a second potential difference of equal or above to the first potential difference is applied between the electrodes. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：在无源矩阵驱动器的电致变色显示装置中没有分隔壁的情况下，实现高质量图像的高速显示和高速擦除。 解决方案：在无源矩阵驱动器的电致变色显示装置100中，第一电极20是平行延伸的多个电极。 第二电极40是平行于与第一电极20正交的方向延伸的多个透明显示电极。像素60形成在第一电极20和第二电极40三维相交的区域上。 当执行显示时，形成所选择的像素60的第一电极20是负电极，形成所选择的像素60的第二电极40是正极，并且在电极之间施加第一电位差的电压。 紧接其后，第一电极20是正电极，第二电极40是负电极，并且在电极之间施加等于或高于第一电位差的第二电位差的电压。 版权所有（C）2011，JPO＆INPIT
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18.发明专利Carrier, reactant complex having the carrier and method for producing carrier 有权承运人，承运人的反应复合物和生产载体的方法
公开(公告)号：JP2010154785A
公开(公告)日：2010-07-15
申请号：JP2008334041
申请日：2008-12-26
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial Science & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
Inventor： SHIMOMURA TAKESHI , SUMIYA TORU , ONO MASATOSHI , ITO TETSUJI , MIZUKAMI FUJIO
IPC: C12N11/14 , G01N27/327 , G01N27/404 , G01N27/416
Abstract: PROBLEM TO BE SOLVED: To provide a carrier which can achieve a higher rate reaction with a reactant supported on the carrier, to provide a reactant complex having the carrier, and to provide a method for producing the carrier. SOLUTION: This carrier 10 for supporting the reactant 20 selectively reacting with a specific substance comprises a substrate 11 having a plurality of mutually parallel through-holes 11a, and hollow fiber silica structures 12 formed along the inner walls 11a1 of the through-holes 11a in the through-holes 11a, wherein each silica structure 12 has a plurality of nanometer order size fine pores 12a in the wall surface, and the reactant 20 is immobilized to the insides of the fine pores 12a. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供可以与负载在载体上的反应物实现更高速率反应的载体，以提供具有载体的反应物络合物，并提供制备载体的方法。 解决方案：用于支撑选择性地与特定物质反应的反应物20的载体10包括具有多个相互平行的通孔11a的基底11和沿通孔的内壁11a1形成的中空纤维二氧化硅结构12。 通孔11a中的孔11a，其中每个二氧化硅结构12在壁表面中具有多个纳米级的细孔12a，并且反应物20固定在细孔12a的内部。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2010136132A
公开(公告)日：2010-06-17
申请号：JP2008310505
申请日：2008-12-05
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
Inventor： TANAKA FUMINORI , HORIBE RYUSUKE , INOTA TAKESHI , ONO MASATOSHI , TAKANO RIKUO , FUKUOKA TOSHIMI
CPC classification number: H04R1/38 , H04R1/04 , H04R1/28 , H04R19/005 , H04R2201/003 , H04R2499/11
Abstract: PROBLEM TO BE SOLVED: To provide a voice input apparatus which is made compact and has high performance.
SOLUTION: The voice input apparatus 2 includes a first housing 51 and a microphone unit 1 arranged in the first housing 51. The microphone unit 1 further includes: a second housing 11 in which a first sound hole 111 and a second sound hole 112 are arranged; a diaphragm 122 arranged in the second housing 11; and an electric circuit part 13 for processing an electric signal generated based on the vibration of the diaphragm 122. The voice input apparatus 2 includes a first sound guide space 513 for guiding sound outside the first housing 51 from a first opening 511 to a first surface 122a of the diaphragm 122 and a second sound guide space 514 for guiding the sound from a second opening 512 to a second surface 122b of the diaphragm 122. The electric circuit part 13 is arranged in the first sound guide space 513, and the voice input apparatus 2 includes an acoustic resistance part 52 for adjusting the frequency characteristics of the first sound guide space 513.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种紧凑且性能高的语音输入装置。 解决方案：语音输入装置2包括布置在第一壳体51中的第一壳体51和麦克风单元1.麦克风单元1还包括：第二壳体11，其中第一声孔111和第二声孔 112排列; 布置在第二壳体11中的隔膜122; 以及用于处理基于振膜122的振动产生的电信号的电路部分13.语音输入装置2包括：第一声音引导空间513，用于将第一壳体51的外部的声音从第一开口511引导到第一表面 122a，以及用于将声音从第二开口512引导到隔膜122的第二表面122b的第二声音引导空间514.电路部13布置在第一声音引导空间513中，并且声音输入 装置2包括用于调节第一声音引导空间513的频率特性的声阻部分52.权利要求：（C）2010，JPO＆INPIT
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公开(公告)号：JP2010057052A
公开(公告)日：2010-03-11
申请号：JP2008221669
申请日：2008-08-29
Applicant: Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
Inventor： TANAKA FUMINORI , HORIBE RYUSUKE , INOTA TAKESHI , TAKANO RIKUO , SUGIYAMA KIYOSHI , FUKUOKA TOSHIMI , ONO MASATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a microphone unit wherein an vibrating film is disposed at a position shifted from an opening part of a housing and no acoustic characteristic deteriorates even if a sidewall part and the housing come close or come into contact with each other. SOLUTION: A microphone unit 110A has a housing 611 including a first space in an inside. A housing 113 includes a housing opening part 611A communicating with the first space and the outside. The microphone unit 110A is further provided with a vibrating film 113 disposed inside the first space, an electrical circuit part 240 which outputs an electrical signal based on the vibration of the vibrating film 113 and a sidewall part 112A which is disposed inside the first space and is thicker than the vibrating film 113. The sidewall part 112A is disposed shifting the vibrating film 113 from below the housing opening part 611A by supporting a periphery of the vibrating film 113. The sidewall part 112A includes a sidewall opening part 112B communicating with a second space above the vibrating film 113 and an outside. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：为了提供一种麦克风单元，其中振动膜设置在从壳体的开口部分偏移的位置处，即使侧壁部分和壳体接近或接触也不会导致声学特性劣化 彼此。 麦克风单元110A具有包括内部的第一空间的壳体611。 壳体113包括与第一空间和外部连通的壳体开口部611A。 麦克风单元110A还设置有设置在第一空间内的振动膜113，电路部240，其输出基于振动膜113的振动的电信号和设置在第一空间内的侧壁部112A， 比振动膜113厚。侧壁部112A通过支撑振动膜113的周围来将振动膜113从壳体开口部611A的下方移位。侧壁部112A包括与第二侧面连通的侧壁开口部112B 振动膜113上方的空间和外部。 版权所有（C）2010，JPO＆INPIT
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