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    Semi-conductor wafers longer than industry standard square
    11.
    发明授权
    Semi-conductor wafers longer than industry standard square 有权

    公开(公告)号：US11562920B2

    公开(公告)日：2023-01-24

    申请号：US16757497

    申请日：2018-10-23

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Robertus Antonius Steeman

    IPC: H01L21/67 ,  H01L21/673 ,  B65G47/90 ,  H01L21/677 ,  H01L31/0352 ,  H01L31/18

    Abstract: A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption. Modules may be composed of a plurality of such larger wafers. Such wafers can be processed in conventional processing equipment that has a wafer retaining portion of industry standard size A and a configuration that also accommodates a wafer with a perpendicular second edge longer than A by at least 1 and typically 3-20 mm. Wet bench carriers and transport and inspection stations can be so used.

    METHOD FOR MAINTAINING CONTAINED VOLUME OF MOLTEN MATERIAL FROM WHICH MATERIAL IS DEPLETED AND REPLENISHED
    13.
    发明申请
    METHOD FOR MAINTAINING CONTAINED VOLUME OF MOLTEN MATERIAL FROM WHICH MATERIAL IS DEPLETED AND REPLENISHED 审中-公开

    公开(公告)号：US20180119309A1

    公开(公告)日：2018-05-03

    申请号：US15566785

    申请日：2016-04-28

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： RALF JONCZYK ,  RICHARD L WALLACE ,  DAVID S HARVEY

    IPC: C30B35/00 ,  C30B29/06

    CPC classification number: C30B35/007 ,  C30B11/08 ,  C30B15/10 ,  C30B29/06 ,  C30B29/08 ,  C30B35/002

    Abstract: A main crucible of molten semiconductor is replenished from a supply crucible maintained such that there are always two phases of solid and liquid semiconductor within the supply crucible. Heat added to melt the solid material results in the solid material changing phase to liquid, but will not result in any significant elevation in temperature of the liquid within the supply crucible. The temperature excursions are advantageously small, being less than that which would cause problems with the formed product. The solid product material acts as a sort of temperature buffer, to maintain the supply liquid temperature automatically and passively at or very near to the phase transition temperature. For silicon, excursions are kept to less than 90° C., and even as small as 50° C. The methods also are useful with germanium. Prior art silicon methods that entirely melt the semiconductor experience excursions exceeding 100° C.

    Selected methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like
    14.
    发明授权
    Selected methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like 有权
    用于从太阳能电池等的熔融材料有效地制造薄的半导体本体的选择的方法

    公开(公告)号：US08696810B2

    公开(公告)日：2014-04-15

    申请号：US13654638

    申请日：2012-10-18

    Applicant: 1366 Technologies Inc.

    Inventor： Eerik T. Hantsoo ,  G. D. Stephen Hudelson ,  Ralf Jonczyk ,  Adam M. Lorenz ,  Emanuel M. Sachs ,  Richard L. Wallace

    IPC: C30B15/22

    CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

    Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

    Abstract translation: 在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

    SELECTED METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE
    15.
    发明申请
    SELECTED METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE 有权
    选择用于有效地从太阳能电池的材料制造半导体体的方法和类似物

    公开(公告)号：US20130036967A1

    公开(公告)日：2013-02-14

    申请号：US13654638

    申请日：2012-10-18

    Applicant: 1366 TECHNOLOGIES INC.

    Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G.D. Stephen Hudelson ,  Ralf Jonczyk

    IPC: C30B11/02

    CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

    Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

    Abstract translation: 在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

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