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    METHOD FOR MAINTAINING CONTAINED VOLUME OF MOLTEN MATERIAL FROM WHICH MATERIAL IS DEPLETED AND REPLENISHED
    3.
    发明申请
    METHOD FOR MAINTAINING CONTAINED VOLUME OF MOLTEN MATERIAL FROM WHICH MATERIAL IS DEPLETED AND REPLENISHED 审中-公开
    用于维持材料被收集和补充的含量的材料的方法

    公开(公告)号：WO2016176418A1

    公开(公告)日：2016-11-03

    申请号：PCT/US2016/029720

    申请日：2016-04-28

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： JONCZYK, Ralf ,  WALLACE, Richard, L. ,  HARVEY, David, S.

    IPC: C30B15/10 ,  C30B15/12 ,  C30B15/20 ,  C30B28/10 ,  C30B28/06 ,  C30B29/08

    CPC classification number: C30B35/007 ,  C30B11/08 ,  C30B15/10 ,  C30B28/06 ,  C30B29/06 ,  C30B29/08 ,  C30B35/002

    Abstract: A main crucible of molten semiconductor is replenished from a supply crucible maintained such that there are always two phases of solid and liquid semiconductor within the supply crucible. Heat added to melt the solid material results in the solid material changing phase to liquid, but will not result in any significant elevation in temperature of the liquid within the supply crucible. The temperature excursions are advantageously small, being less than that which would cause problems with the formed product. The solid product material acts as a sort of temperature buffer, to maintain the supply liquid temperature automatically and passively at or very near to the phase transition temperature. For silicon, excursions are kept to less than 90°C, and even as small as 50°C. The methods also are useful with germanium. Prior art silicon methods that entirely melt the semiconductor experience excursions exceeding 100°C.

    Abstract translation: 熔融半导体的主坩埚从供应坩埚中补充，供应坩埚保持在供应坩埚内始终存在两相的固体和液体半导体。 加入固体材料熔化的热量导致固体物质相变为液体，但不会导致供应坩埚内的液体的温度升高。 温度偏移有利地是小的，小于会导致形成的产品的问题的偏移。 固体产品材料作为一种温度缓冲液，以自动和被动地维持供应液体温度或非常接近相变温度。 对于硅，偏移保持在小于90℃，甚至低至50℃。 这些方法也适用于锗。 完全熔化半导体的现有技术的硅方法体验超过100℃的偏移。

    TECHNIQUES FOR IMPROVED IMPRINTING OF SOFT MATERIAL ON SUBSTRATE USING STAMP INCLUDING UNDERFILLING TO LEAVE A GAP AND PULSING STAMP
    4.
    发明申请
    TECHNIQUES FOR IMPROVED IMPRINTING OF SOFT MATERIAL ON SUBSTRATE USING STAMP INCLUDING UNDERFILLING TO LEAVE A GAP AND PULSING STAMP 审中-公开
    用于改善对基材上的软质材料进行加固的技术，其中包括打破缺口和冲压印花

    公开(公告)号：WO2013044180A1

    公开(公告)日：2013-03-28

    申请号：PCT/US2012/056769

    申请日：2012-09-22

    Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M.

    Inventor： SACHS, Emanuel, M.

    IPC: H01L31/18

    CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

    Abstract translation: 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 差距在其间。 在抗蚀剂和印模的延伸表面之间留有间隙。 如果沉积的抗蚀剂层比目标量稍厚一些，则将简单地导致抗蚀剂和工具之间的较小的间隙。 连续间隙的存在确保印章下没有压力。 因此，突起上的力i仅由压力上方的压力确定并且被良好地控制，导致良好控制的孔尺寸。 间隙防止抗蚀剂完全从任何一个区域泵出，从而防止任何区域不被抗蚀剂覆盖。 印模可以与基板接触地脉动，使压痕突起重复变形。 几个脉冲比单次压机更好地清除任何浮渣层，如通过蚀刻测试比较正常蚀刻对正常时间蚀刻掉的衬底材料的程度所测量的。 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 在它们之间的差距。 在抗蚀剂和印模的延伸表面之间留有间隙。

    HIGH TEMPERATURE ACID ETCH FOR SILICON
    5.
    发明申请
    HIGH TEMPERATURE ACID ETCH FOR SILICON 有权

    公开(公告)号：US20210288207A1

    公开(公告)日：2021-09-16

    申请号：US17202023

    申请日：2021-03-15

    Applicant: 1366 TECHNOLOGIES INC.

    Inventor： Ralf JONCZYK ,  Patrick MCMAHON

    IPC: H01L31/18

    Abstract: A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon. The etching may be conducted at an elevated temperature, such as a temperature of at least 70 degrees Celsius.

    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK
    6.
    发明申请
    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK 审中-公开
    使用自注册掩模选择表面处理方法的方法

    公开(公告)号：US20150037923A1

    公开(公告)日：2015-02-05

    申请号：US14370321

    申请日：2013-01-06

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Vladimir S. Tarasov ,  Ali Ersen ,  ERIC Stern ,  Jason M. Criscione ,  Emanuel M. Sachs

    IPC: H01L31/0236 ,  H01L31/0248

    CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

    Abstract: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.

    Abstract translation: 通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。 光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。 修改也可以通过在腔体特征的底部选择性地添加材料。 不同类型的相同晶片中的特征可以被不同地对待。 有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。 有些可能会加深，有些粗糙，有的两个。 不需要对准以选择性地实现。 掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。

    Apparatus and Process for Depositing a Thin Layer of Resist on a Substrate
    7.
    发明申请
    Apparatus and Process for Depositing a Thin Layer of Resist on a Substrate 有权
    用于在基板上沉积薄层的薄膜的装置和方法

    公开(公告)号：US20140255615A1

    公开(公告)日：2014-09-11

    申请号：US14349087

    申请日：2012-10-12

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Guy M. Danner ,  Vladimir S. Tarasov ,  Peter E. Kane ,  Peter G. Madden ,  Holly G. Gates ,  Emanuel M. Sachs

    IPC: B05B5/00 ,  B05D1/06

    CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B12/16 ,  B05B13/02 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

    Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

    Abstract translation: 本发明涉及在基材上形成薄聚合物膜。 描述了用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了将固体抗蚀剂转化为小颗粒气溶胶的装置，通过加热抗蚀剂以形成与雾化相容的低粘度液体，并应用喷射或冲击雾化和气溶胶颗粒尺寸的技术以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒的方法，并且使用充电装置的进展建立了将带电粒子流引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。

    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS
    9.
    发明申请
    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS 审中-公开
    具有多组分条纹的晶体织物制造

    公开(公告)号：WO2012094169A3

    公开(公告)日：2012-08-23

    申请号：PCT/US2011066842

    申请日：2011-12-22

    Applicant: 1366 TECHNOLOGIES INC ,  SACHS EMANUEL M ,  SERDY JAMES G

    Inventor： SACHS EMANUEL M ,  SERDY JAMES G

    IPC: B32B9/00

    CPC classification number: C30B15/007 ,  C30B29/06

    Abstract: A string for growing ribbon crystal has a core and an outer cover, the cover composed of at least two different materials, chosen with the material of the core in amount and kind such that the CTE of the covered core matches in net, that of the silicon ribbon. The cover material is also chosen so that silicon readily wets significantly around the string, subtending an angle of at least about 55 degrees, up to a fully wetted string, resulting in a relatively thick strong ribbon adjacent the string, closer in thickness to the diameter of the sting. This prevents a thin, fragile ribbon near the string. For silicon ribbon, a cover may be an interspersed composition that is predominantly of silica, with some SiC. The core may also be composed of silica and SiC, in different proportions, and different geometry, or may be a single material, such as Carbon.

    Abstract translation: 用于生长的带状晶体的线条具有芯部和外部覆盖物，所述覆盖物由至少两种不同的材料组成，所述材料以所述芯部的材料的数量和种类选择，使得覆盖芯部的CTE在网中匹配， 硅带。 覆盖材料也被选择成使得硅容易在弦周围显着地凸起，对角至少约55度的角度，直到完全润湿的绳子，导致相邻的弦的相对厚的强带，其厚度更接近于直径 的刺痛。 这样可以防止弦线附近的薄而脆弱的丝带。 对于硅带，覆盖物可以是主要由二氧化硅和一些SiC的散置组合物。 芯也可以由不同比例和不同几何形状的二氧化硅和SiC组成，或者可以是单一材料，例如碳。

    DISPENSING LIQUID CONTAINING MATERIAL TO PATTERNED SURFACES USING A DISPENSING TUBE
    10.
    发明申请
    DISPENSING LIQUID CONTAINING MATERIAL TO PATTERNED SURFACES USING A DISPENSING TUBE 审中-公开
    使用分配管将含液体的材料分配到图案表面

    公开(公告)号：WO2010080822A1

    公开(公告)日：2010-07-15

    申请号：PCT/US2010/020245

    申请日：2010-01-06

    Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  BREDT, James, F. ,  POLITO, Benjamin, F. ,  ERSEN, Ali

    Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  BREDT, James, F. ,  POLITO, Benjamin, F. ,  ERSEN, Ali

    IPC: H01L31/00

    CPC classification number: H01L31/022425 ,  H01L21/6715 ,  Y02E10/50

    Abstract: Materials that contain liquid are deposited into grooves upon a surface of a work piece, such as a silicon wafer to form a solar cell. Liquid can be dispensed into work piece paths, such as grooves under pressure through a dispensing tube. The tube mechanically tracks in the groove. The tube may be small and rest at the groove bottom, with the sidewalls providing restraint. Or it may be larger and ride on the top edges of the groove. A tracking feature, such as a protrusion, Non-circular cross-sections, molded-on protrusions and lobes also enhance tracking. The tube may be forced against the groove by spring or magnetic loading. Alignment guides, such as lead-in features may guide the tube into the groove. Restoring features along the path may restore a wayward tube. Many tubes may be used. Many work pieces can be treated in a line or on a drum.

    Abstract translation: 含有液体的材料沉积在诸如硅晶片的工件的表面上的凹槽中，以形成太阳能电池。 液体可以分配到工件路径中，例如通过分配管的压力下的槽。 管子在凹槽中机械地跟踪。 管可以小并且在槽底部搁置，其中侧壁提供约束。 或者它可能更大并且骑在凹槽的顶部边缘上。 跟踪特征，例如突起，非圆形横截面，模制突起和凸角也增强跟踪。 管可以通过弹簧或磁负载而被迫力抵靠凹槽。 诸如引入特征的对准引导件可以将管引导到凹槽中。 沿着路径还原功能可能会恢复一个顺从的管。 可以使用许多管。 许多工件可以在一条线或一个鼓上进行处理。

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