公开(公告)号：JP2011086958A

公开(公告)日：2011-04-28

申请号：JP2011009002

申请日：2011-01-19

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： WENGERT JOHN F ,  JACOBS LOREN R ,  HALPIN MICHAEL W ,  FOSTER DERRICK W ,  VAN DER JEUGD CORNELIS A ,  VYNE ROBERT M ,  HAWKINS MARK R

IPC: H01L21/205 ,  B01J3/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/687

CPC classification number: C23C16/45502 ,  B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68785

Abstract: PROBLEM TO BE SOLVED: To provide a process chamber to endure high-temperature and low-pressure processes and to improve wafer temperature uniformity and gas flow performance. SOLUTION: The chamber has a vertical lenticular cross section with a wide horizontal dimension and a short vertical dimension between convex upper and lower walls 12, 14. A central horizontal support plate 40 is provided between two lateral side rails 16, 18. The support plate segregates the process chamber into an upper region and a lower region 66, 68, with a purge gas being introduced through a lower tube into the lower region to prevent an unwanted deposition therein. A temperature compensation ring surrounds a susceptor and is formed with a material to absorb heat with higher efficiency than a chamber wall. A gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, and the channels are merged into one at an outlet of the injector to allow mixing of adjacent longitudinal edges of separate flows well before reaching a wafer. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种处理室，以承受高温和低压工艺，并提高晶片温度均匀性和气体流动性能。 解决方案：腔室具有垂直的双凸透镜横截面，其具有宽的水平尺寸和凸的上壁12和下壁14之间的短的垂直尺寸。中央水平支撑板40设置在两个侧向侧轨道16,18之间。 支撑板将处理室分离成上部区域和下部区域66,68，其中吹扫气体通过下部管道被引入下部区域中，以防止其中不希望的沉积。 温度补偿环围绕基座并且形成有以比室壁更高的效率吸收热量的材料。 气体喷射器包括多个独立控制的通道横向设置在腔室上，并且通道在喷射器的出口处合并成一个，以允许在到达晶片之前将单独流动的相邻纵向边缘混合。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010010686A

公开(公告)日：2010-01-14

申请号：JP2009151367

申请日：2009-06-25

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： GLEN D WILK ,  STEVEN GEORGE ,  BEAU BARTON ,  RAIJA MATERO

IPC: H01L21/316 ,  C23C16/44 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide an atomic layer deposition (ALD) process for forming a silicon dioxide thin film at low temperature.
SOLUTION: In some embodiments, a substrate is alternately and sequentially brought into contact with a metal precursor such as trimethyl aluminum, and a silanol such as a TPS, at 200°C less. This method can be used to form silicon dioxide films in various situations. In some embodiments, the method includes processes of: forming only a generally-single molecule layer of a metal precursor on a substrate by providing pulses of a vapor-phase reactant including the metal precursor in a reactant chamber; removing an excessive reactant from the reactant chamber if needed; providing pulses of a vapor-phase reactant including a TPS in the reactant chamber; and removing an excessive TPS and an optional reaction by-product from the reactant chamber.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供在低温下形成二氧化硅薄膜的原子层沉积（ALD）工艺。 解决方案：在一些实施方案中，在200℃下，基材交替地和顺序地与诸如三甲基铝的金属前体和诸如TPS的硅烷醇接触。 该方法可用于在各种情况下形成二氧化硅膜。 在一些实施方案中，该方法包括以下工艺：在反应物室中通过提供包含金属前体的气相反应物的脉冲，在基底上仅形成金属前体的大致单分子层; 如果需要，从反应物室除去过量的反应物; 在反应物室中提供包含TPS的气相反应物的脉冲; 并从反应物室除去过量的TPS和任选的反应副产物。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006310801A

公开(公告)日：2006-11-09

申请号：JP2006075410

申请日：2006-03-17

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： MAES JAN WILLEM ,  WITTE HILDE D ,  POMAREDE CHRISTOPHE

IPC: H01L29/78 ,  C23C16/42 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786

CPC classification number: H01L21/28194 ,  C23C16/401 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/482 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517

Abstract: PROBLEM TO BE SOLVED: To provide a method of fabricating a high-k gate insulating film and a silicon oxide film on the high-k gate insulating film whereby a defect and trapping are avoided that cause a short circuit between doped silicon gates on the high-k gate insulating film.
SOLUTION: The method for forming an integrated circuit configuration on a semiconductor substrate includes deposition of the high-k gate insulating material on the substrate by using an atomic layer deposition process. A silicon oxide capping layer is deposited on the gate insulating material in a fast and thermochemical deposition process. A gate electrode is formed on the silicon oxide capping layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供在高k栅极绝缘膜上制造高k栅极绝缘膜和氧化硅膜的方法，由此避免了在掺杂硅栅极之间引起短路的缺陷和陷阱 在高k栅绝缘膜上。 解决方案：在半导体衬底上形成集成电路结构的方法包括通过使用原子层沉积工艺将高k栅极绝缘材料沉积在衬底上。 氧化硅覆盖层以快速和热化学沉积工艺沉积在栅极绝缘材料上。 在氧化硅覆盖层上形成栅电极。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP5779174B2

公开(公告)日：2015-09-16

申请号：JP2012504786

申请日：2010-04-06

Applicant: エイエスエム・アメリカ・インコーポレイテッド ,  ASM AMERICA INC.

Inventor： シェロ,エリック ,  バーギース,モヒス ,  ホワイト,カール ,  ターホスト,ヘルベルト ,  モーリス,ダン

IPC: H01L21/205 ,  C23C16/455

CPC classification number: C23C16/45502 ,  C23C16/45504 ,  C23C16/45544 ,  H01L21/0228 ,  C23C16/45525 ,  C23C16/45561 ,  C23C16/45591 ,  Y10T137/85938

公开(公告)号：JP2012526282A

公开(公告)日：2012-10-25

申请号：JP2012509857

申请日：2010-04-30

Applicant: エイエスエム・アメリカ・インコーポレイテッドAsm America Inc.

Inventor： アグガーワル，ラビンダー・ケイ ,  ハロ，ロバート・シー

IPC: G01K7/02 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

CPC classification number: G01K7/02 ,  G01K7/04

Abstract: An improved thermocouple assembly for providing a temperature measurement is provided. The thermocouple assembly includes a sheath having a measuring tip, a support member received within the sheath, and first and second wires disposed within the support member. An end of each of the first and second wires are fused together to form a thermocouple junction therebetween. A recessed region is formed in a distal end of the support member, and the thermocouple junction is fixedly located at the base of the recessed region such that the recessed region maintains the thermocouple junction in a substantially fixed position relative to the measuring tip of the sheath.

公开(公告)号：JP2010283357A

公开(公告)日：2010-12-16

申请号：JP2010143215

申请日：2010-06-23

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： TODD MICHAEL A ,  WEEKS KEITH D ,  WERKHOVEN CHRISTIAAN J ,  POMAREDE CHRISTOPHE F

IPC: H01L21/318 ,  C23C16/24 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L29/78

CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

Abstract: PROBLEM TO BE SOLVED: To provide a vapor deposition method wherein an ALD gives superior conformality, film formation speed, and uniformity in comparison with a CVD. SOLUTION: A plurality of sequential steps 140 are conducted in a reaction chamber in order to form ultra high quality silicon-containing compound layers including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as a silicon precursor 100. The silicon precursor is removed from the reaction chamber 110. A silicon nitride layer is then formed by nitriding the silicon layer 120. A nitrogen reactant is removed from the reaction chamber 110. By repeating these steps 100, 110, 120 and 130, a silicon nitride layer of a desired thickness is formed. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种气相沉积方法，其中与CVD相比，ALD具有优异的共形性，成膜速度和均匀性。 解决方案：在反应室中进行多个顺序步骤140，以便形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用硅烷作为硅前体100将硅层沉积在基板上。从反应室110中除去硅前体。然后通过氮化硅层120形成氮化硅层。氮反应物 从反应室110中取出。通过重复这些步骤100,110,120和130，形成所需厚度的氮化硅层。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008252104A

公开(公告)日：2008-10-16

申请号：JP2008112166

申请日：2008-04-23

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： TODD MICHAEL A

IPC: C23C16/24 ,  H01L21/205 ,  C23C14/48 ,  C23C16/02 ,  C23C16/42 ,  C30B25/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/331 ,  H01L21/337 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51 ,  H01L29/737 ,  H01L29/78 ,  H01L31/18 ,  H01L31/20

CPC classification number: C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

Abstract: PROBLEM TO BE SOLVED: To dissolve problems on the manufacture of a Si containing film. SOLUTION: A silicon alloy and doped silicon film are prepared by an ion implanting method using a chemical precursor containing Si as the supply source of the atom of group III and group V. The dopant contains (H 3 Si) 3-x MR x , (H 3 Si) 3 N, or (H 3 Si) 4 N 2 , wherein R is H or D, x is 0, 1 or 2, and M is selected from a group containing B, P, As, and Sb. A crystalline film, hydrogen non-doped silicon alloy film and doped silicon film are formed by a preferable ion implanting method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：解决制造含Si膜的问题。 解决方案：通过使用含有Si作为III族和V族原子的供应源的化学前体的离子注入方法制备硅合金和掺杂硅膜。掺杂剂含有（H 3 SB 3） （H 3 SB）Si（SBB）Si（SBB）Si（SBB））（3） 其中R是H或D，x是0,1或2，并且M选自含有（C 1 -C 4） B，P，As和Sb。 通过优选的离子注入方法形成结晶膜，氢非掺杂硅合金膜和掺杂硅膜。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008184688A

公开(公告)日：2008-08-14

申请号：JP2008010072

申请日：2008-01-21

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： ELERS KAI-ERIK

IPC: C23C16/34 ,  C30B29/38 ,  C30B29/68 ,  H01L21/28 ,  H01L21/285

CPC classification number: C23C16/34 ,  C23C16/4554

Abstract: PROBLEM TO BE SOLVED: To provide a method of controllably forming a conductive tantalum nitride film. SOLUTION: The method of forming a tantalum nitride film comprises a step of sequentially bringing alternating pulses of a tantalum source substance, a plasma-excited species of hydrogen and a nitrogen source substance into contact with a substrate in a reaction space. The plasma-excited species of hydrogen reduce the oxidized state of tantalum, thereby yielding a substantially conductive tantalum nitride film on the substrate. In some embodiments, the plasma-excited species of hydrogen react with halogenated residues within the formed metal film to remove the residues from the film. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可控地形成导电氮化钽膜的方法。 解决方案：形成氮化钽膜的方法包括在反应空间中顺序地将钽源物质，等离子体激发的氢和氮源物质的交替脉冲与基底接触的步骤。 等离子体激发的氢的种类降低钽的氧化态，从而在衬底上产生基本导电的氮化钽膜。 在一些实施方案中，等离子体激发的氢物质与所形成的金属膜内的卤化残基反应以从膜中除去残余物。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006253696A

公开(公告)日：2006-09-21

申请号：JP2006064152

申请日：2006-03-09

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： TODD MICHAEL A ,  WEEKS KEITH D ,  JACOBSON PAUL T

IPC: H01L21/205 ,  C23C16/455

CPC classification number: C23C16/45523 ,  C23C16/45574 ,  C23C16/52

Abstract: PROBLEM TO BE SOLVED: To provide a gas injector capable of optimizing the setting of a plurality of injectors for each individual step, process, and/or stage in the working recipe of substrate treatment. SOLUTION: A substrate treatment device has computer controlled injectors (18A to 18E). A computer (22) is configured so as to adjust a plurality of the injectors (18A to 18E) during the deposition of a graded layer between depositions of two different layers, or between deposition and reaction chamber clean steps. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够优化用于基板处理的工作配方中的每个步骤，处理和/或阶段的多个喷射器的设置的气体喷射器。 解决方案：基板处理装置具有计算机控制的喷射器（18A至18E）。 计算机（22）构造成在沉积两层不同层之间或在沉积和反应室清洁步骤之间沉积梯度层时调节多个喷射器（18A至18E）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006086521A

公开(公告)日：2006-03-30

申请号：JP2005245398

申请日：2005-08-26

Applicant: Asm America Inc ,  エーエスエム アメリカ インコーポレイテッド

Inventor： JOHAN SWART ,  HILDE DE WITTE ,  MAES JAN WILLEM ,  POMAREDE CHRISTOPHE ,  HAVERKORT RUBEN ,  WAN YUET MEI ,  DE BLANK MARINUS J ,  VAN DER JEUGD CORNELIUS A ,  BEULENS JACOBUS JOHANNES

IPC: H01L21/318 ,  C23C16/34 ,  H01L29/78

CPC classification number: H01L21/28194 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/3185 ,  H01L29/518

Abstract: PROBLEM TO BE SOLVED: To provide an improving method for incorporating nitrogen for forming a nitrogen-contained material. SOLUTION: A semiconductor working method comprises a step for providing a single substrate reaction chamber which is gas-communicated with a supply source of NH 3 and gas-communicated with an excited species generator, a step for providing a semiconductor substrate in the reaction chamber, a step for generating excited species in the excited species generator, a step for exposing the NH 3 to the excited species at upstream of the substrate and downstream of the excited species generator, and a step for exposing the substrate to the NH 3 and the excited species after exposing the NH 3 to the excited species. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 待解决的问题：提供一种用于引入氮气以形成含氮材料的改进方法。 解决方案：半导体加工方法包括提供与NH 3 SB 3的供应源气体连通并与受激物种发生器气体连通的单个基板反应室的步骤，步骤 用于在所述反应室中提供半导体衬底，用于在所述激发物质发生器中产生激发物质的步骤，用于在所述衬底的上游和所述激发态的下游暴露所述激发物质的步骤 物种发生器，以及在将NH 3 SB 3暴露于激发物质之后将底物暴露于NH 3 SB 3和被激发物质的步骤。 版权所有（C）2006，JPO＆NCIPI