公开(公告)号：WO0148875A3

公开(公告)日：2001-12-27

申请号：PCT/DE0004667

申请日：2000-12-27

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KORN GEORG ,  GRIEBNER UWE ,  TUENNERMANN ANDREAS

Inventor： KORN GEORG ,  GRIEBNER UWE ,  TUENNERMANN ANDREAS

IPC: H01S3/00 ,  H01S3/067 ,  H01S3/23

CPC classification number: H01S3/06754 ,  H01S3/0057 ,  H01S3/06708 ,  H01S3/06716

Abstract: The invention relates to a laser amplifier system with time-proportional frequency modulation comprising a laser oscillator, which generates ultrashort pulses, a passive dispersive optical waveguide, which temporally stretches these ultrashort pulses, and at least one double-sheathed fiber, which is doped with active ions and which is provided for amplifying these pulses. The laser amplifier system is also equipped with an optical compressor, which comprises dispersive components and which compresses the stretched pulses that are received from the amplifying double-sheathed fiber. According to the invention, the amplifying double-sheathed fiber is doped with active ions in the core and in the first sheath layer, whereby the dopant concentration of the core is greater that that of the first sheath layer and, in the core, is constant or increases over the length of the fiber in a direction of propagation of the light pulse. In order to form a variable pulse width, the optical compressor is constructed of gratings that are arranged on a metal support, whereby the cooled gratings are designed such that they can displaced with defined intervals in a computer-controlled manner. The inventive laser amplifier system also comprises a modulator which is provided for adjusting a variable repetition rate and which is arranged between the laser oscillator and the compressor. In one embodiment, passive dispersive optical waveguides and amplifying double-sheathed fibers are integrated in one fiber.

Abstract translation: 在一个激光放大系统具有时间比例的频率调制，包括产生超短脉冲激光振荡器，无源色散光纤，这在时间延伸这些超短脉冲，以及至少一个掺杂有双包层光纤对这些脉冲，以及具有光学压缩机色散分量的增强活性离子， 压缩从增强双包层光纤中接收的数据的展宽脉冲，根据掺杂在芯和用活性离子的第一包层的增强双包层光纤的发明中，芯的掺杂浓度比所述第一包层和在该光脉冲在光纤长度的传播方向在芯大 是恒定的或增加的，光学压缩器形成为形成布置在金属载体晶格上的可变脉冲宽度，其中冷却网格计算机控制在定义的A 条件形成为可移动的，并且布置用于在激光振荡器和压缩器之间设置可变重复频率的调制器。 在一个实施例中，无源色散光纤和双芯增强光纤被集成到一根光纤中。

公开(公告)号：WO03029797A3

公开(公告)日：2003-07-31

申请号：PCT/EP0210459

申请日：2002-09-18

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  RUHL HARTMUT

Inventor： RUHL HARTMUT

IPC: G01N23/08 ,  G01N23/02 ,  G01N23/04 ,  G01N23/06

CPC classification number: G01N23/08

Abstract: Costly devices, e.g. accelerators, are required in order to examine the inner structure of materials, or until now there has been no available method. The present inventive method enables a material sample to be radiographed under a vacuum using a proton beam which is produced by exposing a film of solid matter, also under a vacuum, to a laser beam. The exposed region of the material sample is imaged by a proton detector which is arranged in the radiation path of the proton beam, behind the material sample. Information about the plasma density, the plasma temperature, the degree of the plasma charge and the spatial structure of certain plasma regions is obtained by radiographing plasmas using laser-produced protons. Furthermore, temporal courses in the plasma can be efficiently determined. Image information can be obtained for regions which are not accessible using conventional image-producing methods.

Abstract translation: 对于物质的内部结构的研究是如此复杂的设备。 B.加速器必要或有还无的方法。 用本发明的方法，材料的与质子束在真空下向试样照射，这是通过照射固体膜，其也位于用激光束的真空产生材料样品的被照射区域由布置在材料样品质子检测器后面的质子束的辐射路径成像。 通过与等离子体密度的激光产生的质子的信息，等离子体温度等离子体的照射，可以得到等离子体的电荷的程度和某些等离子体区的空间结构。 此外，有效的判定定时序列中的等离子是可能的。 可以从不是通过常规的成像方法可访问的区域中获得的图像信息。

公开(公告)号：WO03059374A2

公开(公告)日：2003-07-24

申请号：PCT/EP0300240

申请日：2003-01-13

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  MEYER THOMAS ,  VINKEMEIER UWE

Inventor： MEYER THOMAS ,  VINKEMEIER UWE

IPC: A61K38/00 ,  C07K14/47 ,  C12N1/21 ,  C12N15/12 ,  A61K38/17 ,  C12N5/10

CPC classification number: C07K14/4705 ,  A61K38/00

Abstract: The invention relates to the use of dimer-specific nuclear localisation signal peptides (dsNLS) derived from the STAT DNA binding domain for the diagnosis and/or treatment of diseases related to said peptides, and as target molecules for screening pharmacological active ingredients.

Abstract translation: 本发明涉及使用从用于诊断和/或与它们相关的疾病治疗中的STAT DNA结合结构域衍生的特定二聚体核定位信号肽（dsNLS）的，并作为药理活性物质进行筛选的目标分子。

公开(公告)号：WO0167394A3

公开(公告)日：2002-07-04

申请号：PCT/DE0100955

申请日：2001-03-08

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  LABUDDE DIRK

Inventor： LABUDDE DIRK

IPC: A61B6/03 ,  A61B5/055 ,  A61B90/00 ,  G06T7/00 ,  G06T7/60

CPC classification number: A61B90/36 ,  G06T7/60 ,  G06T7/73 ,  G06T2207/30016

Abstract: The invention relates to a method for detecting displacements of individual brain areas and to the representation thereof on a display for guaranteeing optimal planning of an operation, said displacements being caused by tumour formation. According to the invention, a displacement vector is detected for each brain area which was situated at a defined location in the initial position where a tumour is located now. Said displacement vector defines the displacement of a brain area in the direction and the amount thereof, whereby said displacement is caused by tumour growth. Said vector is detected by means of two parameters (b and c) which can be derived from the size and the kind of the tumour. The displacement vectors are numerically calculated according to the formula ur=cr + br after the two parameters have been detected. The image of the tumour as well as the detected displacements are subsequently inserted into a stereotactic atlas. The brain areas are displayed at the actual locations in the thus obtain image. Improved planning for carrying out operations can thus be guaranteed by means of said representation.

Abstract translation: 本发明涉及一种用于如脑肿瘤形成的结果和它们的显示屏幕上的各个区域的位移的测定方法，以确保最佳的运转计划。 根据本发明，一个位移矢量为已在初始状态处，其肿瘤现在是一个所定义的位置的脑的各个区域来确定。 该位移向量，其限定了脑面的位移，在它的方向infolgedeg肿瘤生长，其大小由两个参数b和c，它可以从肿瘤的大小和肿瘤的类型来推导确定。 两个参数被确定后，将位移矢量计算值= CR + BR <-2>数值通过的关系。 此后，肿瘤的图像以及在立体定向图谱所确定的位移被插入。 在这样得到的表示，现在被显示在脑区的实际位置。 有了这个显示器，提高了规划的实施运作能够得到保证。

公开(公告)号：WO2010106144A3

公开(公告)日：2010-11-18

申请号：PCT/EP2010053553

申请日：2010-03-18

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

Inventor： SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

IPC: H01L21/60

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The invention relates to a metallization (40) (and a semiconductor wafer (10) having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), the barrier layer (30) and the metallization (40) being applied by means of physical separation and the metallization (40) being designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.

Abstract translation: 本发明的目的，金属化（40）（或者与相应的金属化的半导体晶片（10））通过物理气相沉积（干分离）的装置和用于它们的生产提供一种方法，一方面可以制备和在另一方面的焊料的足够高的粘附性 确保-Bumps。 用于至少一个接触焊盘（20）一种制造金属化（40）的本发明方法具有以下方法步骤：在衬底（10）上施加至少一个接触焊盘（20），沉积阻挡层（30）（在所述至少一个接触垫的顶 20），以及将金属化（40）（在该阻挡层（30的顶部），其中所述阻挡层（30）和金属化（40）通过物理分离和金属化（40）为两个层结构，多个交替的金属化来施加 41，42形成），镍的第一金属化层（41），或具有小于500纳米的层厚度，并从一个角度的第二金属化层（42）由镍不同Ni合金，延展性的导电材料，优选金形成， 是。

公开(公告)号：WO2006134103A8

公开(公告)日：2007-03-15

申请号：PCT/EP2006063141

申请日：2006-06-13

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KLEHR ANDREAS ,  SUMPF BERND ,  MAIWALD MARTIN ,  SCHMIDT HEINAR

Inventor： KLEHR ANDREAS ,  SUMPF BERND ,  MAIWALD MARTIN ,  SCHMIDT HEINAR

IPC: G01J3/44 ,  G01J3/10 ,  G01N21/65 ,  H01S5/0625

CPC classification number: G01N21/65 ,  G01J3/10 ,  G01J3/44 ,  G01J2003/4424 ,  G01N2021/656

Abstract: The invention relates to a method and a device for producing and detecting a Raman spectrum. The problem addressed by the present invention is that of devising a method and a device for producing and detecting a Raman spectrum of a medium under investigation, whereby the Raman spectrum of a medium that is under investigation can be examined with a high degree of sensitivity while requiring relatively little equipment. The method is characterised by the coupling of excitation radiation into a medium (8) under investigation and the coupling of the electromagnetic radiation scattered by the medium (8) under investigation into a spectral optic system (10), a laser diode (1) for generating excitation radiation with at least two different wavelengths (? 1 , ? 2 ) being controlled with at least two different excitation conditions and at least one Raman spectrum (16, 17) being detected in each case from the scattered radiation at the different excitation wavelengths (? 1 , ? 2 ), and the Raman spectrum (20) of the medium (8) under investigation being determined from the at least two detected Raman spectra (16, 17), the two different excitation conditions for the laser diode (1) being adjusted by means of the electric current supplied to the laser diode (1).

Abstract translation: 本发明涉及一种用于产生和检测的拉曼光谱的方法和装置。 本发明的目的是提供一种用于产生和检测的被检查介质，利用该具有高灵敏度的被检查介质的拉曼光谱可以在上装置相对低的支出来确定的拉曼光谱的方法和装置。 该方法的特征在于，耦合激发辐射到被检体内待检查介质（8），待检查的耦合介质（8）散射的电磁辐射的光谱光学系统（10），用于产生激发辐射的激光二极管（1）至少 两种不同波长的被驱动与至少两个不同的激发条件（2？1，？）和出散射辐射的在每种情况下的不同的激发波长（λ1，？2）至少一种拉曼光谱（16，17）被检测并从该至少 两个检测到的拉曼光谱（16，17）时，要被检查介质（8）被确定的拉曼光谱（20），其特征在于，被设置施加由所述激光二极管（1）的电流的激光二极管（1）的两个不同的激励条件 是。

公开(公告)号：WO2004080448A3

公开(公告)日：2004-12-16

申请号：PCT/DE2004000491

申请日：2004-03-08

Applicant: UNIV BERLIN FREIE ,  FORSCHUNGSVERBUND BERLIN EV ,  WALTHER THOMAS ,  MELZIG MATTHIAS F ,  SIEMS WOLF E

Inventor： WALTHER THOMAS ,  MELZIG MATTHIAS F ,  SIEMS WOLF E

IPC: A61K31/00 ,  A61K31/165 ,  A61K31/554 ,  A61K35/74 ,  A61K36/00 ,  A61P3/00 ,  A61P3/04 ,  A61P25/28 ,  C12N15/85 ,  C12Q1/02 ,  A01K67/02 ,  A01K67/027 ,  A61K35/78

CPC classification number: C12N15/8509 ,  A01K2217/075 ,  A01K2227/105 ,  A01K2267/03 ,  A01K2267/0312 ,  A01K2267/0356 ,  A01K2267/0362 ,  A61K31/00 ,  A61K31/165 ,  A61K31/554 ,  A61K36/00 ,  G01N2333/96486 ,  A61K2300/00

Abstract: The invention relates to the use of NEP-associated molecules, such as inhibitors, activators or substrates for producing a medicament for the diagnosis, prophylaxis, treatment, after-care and/or for monitoring the course of non-immunogenic, non-hypertensive civilisation diseases, in particular obesity and Alzheimer's disease. The invention also relates to the use of genetically modified animals for analysing obesity and Alzheimer's disease, in addition to a method for treating eating disorders and dementia and to a method for identifying molecules associated with eating disorders and/or Alzheimer's disease.

Abstract translation: 本发明涉及使用NEP相关分子 - 如抑制剂，激活剂或底物 - 用于诊断，预防，治疗，后续治疗和/或流非免疫原性-nichthypertensiven文明病的控制，特别是肥胖症和阿尔茨海默病的药物中的用途。 本发明还涉及使用转基因动物的肥胖的调查和阿尔茨海默氏症，以及用于治疗进食障碍和痴呆，以及用于与进食障碍和/或阿尔茨海默氏病有关的分子的识别的方法的方法。

公开(公告)号：WO2004051853A3

公开(公告)日：2004-11-18

申请号：PCT/EP0313318

申请日：2003-11-26

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KOCH REINHOLD ,  PAMPUCH CARSTEN ,  NEY ANDREAS ,  PLOOG KLAUS H

Inventor： KOCH REINHOLD ,  PAMPUCH CARSTEN ,  NEY ANDREAS ,  PLOOG KLAUS H

IPC: H03K19/18 ,  H03K19/177

CPC classification number: H03K19/18

Abstract: Disclosed is a method for operating a logic device (10), according to which at least one output variable O = F (IA, IB) is formed from input variables (IA, IB) with an operator function F of the magnetic logic device (10) by means of at least one logic operation, the logic device (10) being set to a start mode prior to the operation with the aid of a specific operator control signal (SET) so as to execute the operator function F. Said operator control signal is selected among a group of control signals, by means of which different nonvolatile start modes that are characteristic of different logic functions can be specifically set. Also disclosed is a magnetic logic device (10) which is set up so as to implement the inventive method.

Abstract translation: 一种用于操作磁逻辑装置（10）的方法描述了至少一个输出变量O = F（IA，IB）是通过与操作者功能的磁性逻辑器件F的输入值（IA，IB）中的至少一个逻辑操作形成，其中（10） 其中所说的与特定的操作员控制信号（SET）操作之前逻辑装置（10）被设定为开始状态，用于执行操作的函数F，其中，从一组操作者控制信号由通过各种非挥发性起始状态靶向控制信号中选择 是可调整的，这是不同逻辑功能的特征。 还描述了用于实施该方法的磁逻辑器件（10）。

公开(公告)号：WO9710209A3

公开(公告)日：1997-05-01

申请号：PCT/DE9601742

申请日：1996-09-11

Applicant: FORSCHUNGSZENTRUM JUELICH GMBH ,  FORSCHUNGSVERBUND BERLIN EV ,  BAUER PAUL J ,  HAGEN VOLKER

Inventor： BAUER PAUL J ,  HAGEN VOLKER

IPC: C07D207/44 ,  C07D207/452 ,  C08F8/30 ,  C08J3/24

CPC classification number: C07D207/452 ,  C08F8/30

Abstract: The invention concerns novel dimaleinimido-substituted dihydroxyalkanes, a process for their preparation and their use as crosslinking reagents. The disadvantage with the cleavable bismaleinimido derivatives used hitherto which react with SH groups is that the subsequent cleavage of the crosslinking reagents from the proteins has to be carried out in acid or alkaline media. The object of the invention is to prepare novel cleavable crosslinking reagents which react with SH groups and do not require subsequent cleavage of the crosslinking reagents from the proteins in acid or alkaline media. This object is achieved by dimaleinimido-substituted dihydroxyalkanes of the general formula given in figure 3.

公开(公告)号：WO2012150177A3

公开(公告)日：2013-05-30

申请号：PCT/EP2012057665

申请日：2012-04-26

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KNIGGE ANDREA ,  WEYERS MARKUS ,  WUERFL HANS-JOACHIM

Inventor： KNIGGE ANDREA ,  WEYERS MARKUS ,  WUERFL HANS-JOACHIM

IPC: H01L31/109 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/108 ,  H01L31/18

CPC classification number: H01L31/035272 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/03048 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/102 ,  H01L31/1085 ,  Y02E10/544 ,  Y02P70/521

Abstract: The aim of the invention is to specify a UV photodetector that has high sensitivity and a low dark current. According to the invention, the fingers (18) of the first electrode structure (14) and the fingers (24) of the second electrode structure (20) are formed by a cover layer (30) made of a second semiconducting material, wherein the cover layer (30) is arranged on the absorber layer (12) and directly contacts the absorber layer (12) in the region of the fingers (18, 24), and the first semiconducting material and the second semiconducting material are designed in such a way that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer (12) and the cover layer (30) in the region of the fingers (18, 24). The design of the fingers (18, 24) of the cover layer (30) can be achieved by the removal of the 2DEG in the region between the fingers by etching. Alternatively, electron mobility at the boundary layer between the cover layer (30) and the absorber layer (12) outside of the regions forming the fingers (18, 24) can be sufficiently reduced by ion implantation.

Abstract translation: 本发明提供一种具有高灵敏度和低暗电流UV光电探测器的一个目的。 所述第一电极结构的所述指状物（18）（14）和第二半导电材料。根据本发明的覆盖层（30）的所述第二电极结构（20）的指状物（24），所述吸收体层上的覆盖层（30）（12） 布置并在手指（18，24）直接接触，并且所述第一半导体材料和第二半导体材料的区域中的吸收层（12）被构造成使得（在吸收器层（12）和顶层之间的边界层30 ）在手指（区域18,24）的二维电子气（2DEG）形成。 所述覆盖层（30）的指状物（18，24）的形成可以发生在手指之间的区域中，通过蚀刻，通过去除2DEG。 可替换地，电子迁移率可以是在形成覆盖层（30）和吸收层（12）之间的界面，通过离子注入充分降低部手指（18，24）的外侧。