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    Semiconductor light-emitting device
    12.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07804101B2

    公开(公告)日：2010-09-28

    申请号：US10897163

    申请日：2004-07-23

    Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

    Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

    IPC: H01L33/00

    CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

    Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

    Nitride semiconductor device and a process of manufacturing the same
    13.
    发明授权
    Nitride semiconductor device and a process of manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US06876009B2

    公开(公告)日：2005-04-05

    申请号：US10314444

    申请日：2002-12-09

    Applicant: Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    Inventor： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    IPC: H01L21/20 ,  H01L33/24 ,  H01L33/32 ,  H01S5/323 ,  H01L31/0328

    CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/32

    Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

    Abstract translation: 包含形成在不同基板上的氮化镓系半导体层的氮化物半导体器件的发光效率提高。 形成在基板上的缓冲层形成在其间的n型层包括沿纵向观察的凹凸部的一部分。 有源层形成在凸起的至少两个侧面上，凹部位于它们之间。 在凹部内形成p型层。 绝缘层形成在突起的顶面上，在凹部的底面上。 n型层设置有n电极，而p型层设置有p电极接触层。 从形成在氮化镓系半导体层的凹部内的p型层观察，有源层和n型层位于彼此相反的关系。 从凹部的侧面观察，在n型层上形成有源层和p型层。

    Semiconductor light emitting device
    16.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08796721B2

    公开(公告)日：2014-08-05

    申请号：US13730354

    申请日：2012-12-28

    Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

    Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

    IPC: H01L33/00

    CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

    Abstract translation: 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

    Nitride semiconductor device, and its fabrication process
    20.
    发明授权
    Nitride semiconductor device, and its fabrication process 有权
    氮化物半导体器件及其制造工艺

    公开(公告)号：US07348600B2

    公开(公告)日：2008-03-25

    申请号：US10687768

    申请日：2003-10-20

    Applicant: Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    Inventor： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    IPC: H01L21/15

    CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/34333 ,  H01S2304/12

    Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

    Abstract translation: 本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。 凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。 每个凹槽以与主C平面不同的平面取向曝光。 例如，A平面的平面取向被暴露。 活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。 第二导电（p）型半导体层形成在凹部的内表面上。 由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值 颜色。

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