Abstract:
PROBLEM TO BE SOLVED: To enable status information, criticality information and corrective measures information generated or collected in one functional area within a process plant to be used in other functional areas.SOLUTION: A method and system for monitoring an entity within a process plant 10 includes collecting status data pertaining to the status of an entity within the process plant, collecting criticality data pertaining to the importance of the entity within the process plant, and using the entity status data and the criticality data to perform a function within the process plant.
Abstract:
PROBLEM TO BE SOLVED: To provide methods for comparing and selecting process control apparatus. SOLUTION: The method employs software, executed on a stand-alone computer device, or accessible through the web to retrieve data specific to a given process environment, and calculate the performance characteristics of multiple types of process control equipment capable of meeting the demands of the application. The performance characteristics of each type can be provided in graphical form, at the same time, to enable a potential user to readily discern the advantages and disadvantages of each type of process control equipment. In one embodiment, a purchase of the apparatus may then be made. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a platinum resistor thermometer whose electric characteristics are not deteriorated at a high temperature, and its manufacturing method. SOLUTION: A thin film platinum resistor temperature detecting element 14 is coated with a high quality dielectric layer 24 which is covered with a partition layer 26. This partition layer 26 covers the upper part of the dielectric layer 24, and prevents contaminant from diffusion toward the detecting element 14. The partition layer 26 allows diffusion of oxygen, so that the platinum layer is surrounded by an abundant oxygen atmosphere. The high quality dielectric layer 24 is, e.g. a silicon dioxide layer, and the partition layer 26 is composed of titanium dioxide. By this constitution, the temperature detecting element 14 is not contaminated and the temperature coefficient of the resistor is not deteriorated at a high temperature.