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    Spinel article and method for forming the same
    11.
    发明专利
    Spinel article and method for forming the same 有权
    旋转物品及其形成方法

    公开(公告)号：JP2011236123A

    公开(公告)日：2011-11-24

    申请号：JP2011128276

    申请日：2011-06-08

    Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

    Inventor： KOKTA MILAN ,  STONE-SUNDBERG JENNIFER ,  COOKE JEFFREY ,  ACKERMAN RONALD ,  ONG HUNG ,  CORRIGAN EMILY

    IPC: C30B29/22 ,  B32B9/00 ,  C04B35/03 ,  C04B35/04 ,  C30B1/00 ,  C30B11/00 ,  C30B15/00 ,  C30B29/10 ,  C30B29/24 ,  H01L33/32 ,  H01S5/323

    CPC classification number: C30B15/00 ,  C30B11/00 ,  C30B29/24 ,  Y10T428/21

    Abstract: PROBLEM TO BE SOLVED: To provide improved spinel materials suited for optical applications, and to provide improved methods for forming the same.SOLUTION: A single crystal spinel boule is formed by melt processing. The boule has a non-stoichiometric composition and has a reduced mechanical stress or strain. The reduced mechanical stress is represented by a yield rate, not less than about 20%. Yield rate is defined by W/(W+W)×100%, where Wis equal to the number of intact wafers processed from the boule, and Wis equal to the number of fractured wafers from the boule due to internal mechanical stress or strain in the boule. A single crystal spinel material has a non-stoichiometric composition and has a transparency window represented by absorptivity over a wavelength range. The wavelength range normally extends from about 400 nm to about 800 nm. The transparency window is defined as the largest single absorptivity peak height along the wavelength range, the largest single peak height being not greater than 0.35 cm.

    Abstract translation: 要解决的问题：提供适用于光学应用的改进的尖晶石材料，并提供改进的形成它们的方法。 解决方案：通过熔融加工形成单晶尖晶石棒。 该毛坯具有非化学计量的组成并具有降低的机械应力或应变。 降低的机械应力由屈服率表示，不小于约20％。 收益率由W i /（W i + W f ）×100％，其中W i 等于从该坯料处理的完整晶片的数量，并且W f 等于 到由于内部机械应力或应力在轴上的来自轴的裂纹晶片的数量。 单晶尖晶石材料具有非化学计量组成，并且具有由波长范围内的吸收率表示的透明度窗口。 波长范围通常从约400nm延伸至约800nm。 透明度窗口被定义为沿着波长范围的最大单个吸收峰峰值，最大单峰高度不大于0.35cm -1 。 版权所有（C）2012，JPO＆INPIT

    Sol-gel alumina abrasive grain and vitreous bound abrasive product
    15.
    发明专利
    Sol-gel alumina abrasive grain and vitreous bound abrasive product 有权
    SOL-GEL ALUMINA磨料颗粒和VITREOUS BOUND磨料产品

    公开(公告)号：JP2007231287A

    公开(公告)日：2007-09-13

    申请号：JP2007101967

    申请日：2007-04-09

    Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

    Inventor： SUNG JASON ,  BAUER RALPH

    IPC: B24D3/00 ,  C09K3/14 ,  B24D3/14 ,  C04B41/87

    CPC classification number: C09K3/1436

    Abstract: PROBLEM TO BE SOLVED: To provide sol-gel alumina abrasive grains which reduce the surface areas of the grains and allow the production of vitreous bonded products using low temperature vitreous bond materials without the production of black points, spots as a result of the incomplete combustion of organic components used in the production process.
    SOLUTION: The sol-gel alumina abrasive grains are characterized by coating the alumina abrasive grains with a ceramic oxide and containing alpha alumina crystals having particle diameters of ≤2 μm.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供减少晶粒表面积的溶胶 - 凝胶氧化铝磨料颗粒，并允许使用低温玻璃粘结材料生产玻璃态粘结产品而不产生黑点，由于 在生产过程中使用的有机组分的不完全燃烧。 溶胶 - 凝胶氧化铝磨料颗粒的特征在于用陶瓷氧化物涂覆氧化铝磨粒，并含有粒径≤2μm的α氧化铝晶体。 版权所有（C）2007，JPO＆INPIT

    Method for realigning crystal orientation of single crystal body
    18.
    发明专利
    Method for realigning crystal orientation of single crystal body 有权
    用于实现单晶体晶体取向的方法

    公开(公告)号：JP2014058444A

    公开(公告)日：2014-04-03

    申请号：JP2013235337

    申请日：2013-11-13

    Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

    Inventor： TANIKELLA BRAHMANANDAM V ,  CHRISTOPHER ARCONA ,  DAVID I GINDHART ,  CHRISTOPHER D JONES ,  SIMPSON MATTHEW A

    IPC: C30B33/00 ,  H01L21/304

    CPC classification number: B24B7/22 ,  B24B49/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for realigning a crystal orientation of a single crystal body such as a sapphire in the production of a single crystal for a semiconductor of a nitride material of group III and V elements, especially GaN.SOLUTION: A method for altering a crystal orientation of a single crystal body includes a step of analyzing the crystal orientation of a single crystal body and a step of calculating an angle of orientation difference between a selected crystal orientation of the single crystal body and a projection of crystal orientation along a first main outer surface of the single crystal body. The method further includes a step of removing a material from at least a part of the first main outer surface to alter the angle of orientation difference.

    Abstract translation: 要解决的问题：提供一种用于在制造用于III族氮化物材料的半导体的单晶的制造中的蓝宝石等单晶体的晶体取向的方法以及V族元素，特别是GaN。解决方案：A 用于改变单晶体的晶体取向的方法包括分析单晶体的晶体取向的步骤和计算单晶体的选定晶体取向与晶体取向投影之间的取向差角度的步骤 沿着单晶体的第一主外表面。 该方法还包括从第一主外表面的至少一部分去除材料以改变取向差的角度的步骤。

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