ELECTROSTATIC CHUCK AND METHOD OF FORMING
    11.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号:WO2008082978A3

    公开(公告)日:2008-08-21

    申请号:PCT/US2007088082

    申请日:2007-12-19

    CPC classification number: H01L21/6833 H02N13/00 Y10T29/49117 Y10T279/23

    Abstract: A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

    Abstract translation: 公开了一种库仑静电吸盘,其包括衬底,覆盖衬底的导电层和覆盖导电层的消弧层。 静电卡盘还包括覆盖消弧层的高k电介质层,其中高k电介质层的介电常数不小于约10,电阻率不小于约1011欧姆 - 厘米。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    13.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号:WO2008082977A3

    公开(公告)日:2008-09-12

    申请号:PCT/US2007088080

    申请日:2007-12-19

    CPC classification number: H01L21/6833 H01L21/68 Y10T29/49117

    Abstract: An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

    Abstract translation: 公开了一种静电卡盘,其包括衬底,覆盖衬底的图案化导电层,使得图案化导电层限定由间隙分开的电极路径。 静电卡盘还包括覆盖图案化导电层的电阻层和覆盖衬底并设置在电极通路之间的间隙中的低k电介质层。 低k电介质层包括具有与衬底材料不同的相位的材料。

    CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER AND METHOD FOR FORMING SAME

    公开(公告)号:WO2005021830A3

    公开(公告)日:2005-03-10

    申请号:PCT/US2004/026764

    申请日:2004-08-19

    Abstract: An article is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to contact the substrate directly without the provision of intervening layers between the substrate and the corrosion-resistant coating, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component (18, 20) utilized and implemented in a semiconductor processing apparatus (10) for processing semiconductor wafers.

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