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    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    3.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电卡盘和成型方法

    公开(公告)号：WO2008082978A2

    公开(公告)日：2008-07-10

    申请号：PCT/US2007/088082

    申请日：2007-12-19

    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  SIMPSON, Matthew A.

    Inventor： SIMPSON, Matthew A.

    IPC: H01L21/683

    CPC classification number: H01L21/6833 ,  H02N13/00 ,  Y10T29/49117 ,  Y10T279/23

    Abstract: A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

    Abstract translation: 公开了一种库仑静电吸盘，其包括衬底，覆盖衬底的导电层以及覆盖导电层的电弧消除层。 静电卡盘还包括覆盖在电弧消除层上的高k介电层，其中高k介电层具有不小于约10的介电常数和不小于约1011欧姆 - 厘米的电阻率。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    4.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电卡盘和成型方法

    公开(公告)号：WO2008082977A2

    公开(公告)日：2008-07-10

    申请号：PCT/US2007/088080

    申请日：2007-12-19

    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  SIMPSON, Matthew A.

    Inventor： SIMPSON, Matthew A.

    CPC classification number: H01L21/6833 ,  H01L21/68 ,  Y10T29/49117

    Abstract: An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

    Abstract translation: 公开了一种静电吸盘，其包括衬底，覆盖衬底的图案化导电层，使得图案化导电层限定由间隙分开的电极通道。 静电卡盘还包括覆盖图案化导电层的电阻层和覆盖在基板上并设置在电极通路之间的间隙中的低k电介质层。 低k电介质层包括具有与衬底材料不同相位的材料。

    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR
    5.
    发明申请
    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR 审中-公开
    一种使用这种SUSCEPTOR形成LED器件的不方便和方法

    公开(公告)号：WO2008058270A3

    公开(公告)日：2008-07-10

    申请号：PCT/US2007084261

    申请日：2007-11-09

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A

    Inventor： SIMPSON MATTHEW A

    IPC: H01L21/687

    CPC classification number: H01L21/68757

    Abstract: A susceptor for holding a single crystal wafer for LED production is provided which includes a susceptor body having a recess for receiving a single crystal wafer, wherein the recess has a surface having a surface roughness (R max 191) of not greater than about 10 microns. The susceptor body also includes silicon impregnated silicon carbide and a nitride layer overlying the susceptor body.

    Abstract translation: 提供了用于保持用于LED生产的单晶晶片的感受体，其包括具有用于接收单晶晶片的凹部的基座主体，其中所述凹部具有表面粗糙度（R max max）191的表面， 不大于约10微米。 基座体还包括硅浸渍的碳化硅和覆盖基座主体的氮化物层。

    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR
    6.
    发明申请
    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR 审中-公开
    使用这种感受器形成LED器件的感受器和方法

    公开(公告)号：WO2008058270A2

    公开(公告)日：2008-05-15

    申请号：PCT/US2007/084261

    申请日：2007-11-09

    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  SIMPSON, Matthew A.

    Inventor： SIMPSON, Matthew A.

    IPC: H01L21/687

    CPC classification number: H01L21/68757

    Abstract: A susceptor for holding a single crystal wafer for LED production is provided which includes a susceptor body having a recess for receiving a single crystal wafer, wherein the recess has a surface having a surface roughness (R max 191) of not greater than about 10 microns. The susceptor body also includes silicon impregnated silicon carbide and a nitride layer overlying the susceptor body.

    Abstract translation: 提供一种用于容纳用于LED生产的单晶片的基座，该基座包括具有用于容纳单晶晶片的凹部的基座主体，其中该凹部具有表面粗糙度（R max_191）不大于约10微米。 感受器主体还包括硅浸渍碳化硅和覆盖感受器主体的氮化物层。

    CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER, SEMICONDUCTOR PROCESSING APPARATUS INCORPORATING SAME, AND METHOD FOR FORMING SAME
    7.
    发明申请
    CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER, SEMICONDUCTOR PROCESSING APPARATUS INCORPORATING SAME, AND METHOD FOR FORMING SAME 审中-公开
    具有耐腐蚀层的陶瓷制品，与其相容的半导体加工装置及其形成方法

    公开(公告)号：WO2005021830A2

    公开(公告)日：2005-03-10

    申请号：PCT/US2004026764

    申请日：2004-08-19

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A ,  BILLIERES DOMINIQUE

    Inventor： SIMPSON MATTHEW A ,  BILLIERES DOMINIQUE

    IPC: C04B41/50 ,  C04B41/87 ,  C23C4/10 ,  C23C16/44 ,  C04B41/45 ,  H01L21/00

    CPC classification number: C04B41/87 ,  C04B41/009 ,  C04B41/5045 ,  Y10T428/26 ,  C04B41/4527 ,  C04B35/10

    Abstract: An article-is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to directed contact the substrate without the provision of intervening layers between the substrate and the corrosion-resistant coatin, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide, and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component utilized and implemented in a semiconductor processing apparatus for processing semiconductor wafers.

    Abstract translation: 提供了一种包括衬底和设置在衬底上的耐腐蚀涂层的制品。 基材通常由氧化铝组成，并且提供耐腐蚀涂层以便引导接触基材，而不在基材和耐腐蚀涂层之间提供介入层，例如通过高温处理工艺提供的反应产物 。 耐腐蚀涂层通常基本上由稀土氧化物组成，并且具有不小于约15MPa的粘合强度。 根据特定实施例，制品是在用于处理半导体晶片的半导体处理装置中使用和实现的陶瓷部件。

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