Abstract:
Method for fabricatingelectrical bonding pads of a wafer Method for fabricatingelectrical bonding pads on the electrical contact areas of a wafer, comprising the productionof first blocks (7) made of a solder material, the productionof second blocks(10) made of a solder material on these first blocks, and passage through an oven so as to shape the said blocks into approximately domed electrical bonding pads.
Abstract:
The present description concerns a derivative measurement circuit. The circuit implements successive cycles, each corresponding to a succession of first, second, and third periods of a clock signal. At each first period, an input voltage is memorized on a first capacitive element and the circuit delivers a voltage indicating a difference between a voltage on a second capacitive element and a voltage on a third capacitive element. At each second period, the input voltage is memorized on the second capacitive element and the circuit delivers a voltage indicating a difference between a voltage on the first capacitive element and the voltage on the third capacitive element. At each third period, the input voltage is memorized on the third capacitive element and the circuit delivers a voltage indicating a difference between the voltage on the second capacitive element and the voltage on the first capacitive element.
Abstract:
The present disclosure relates to a device comprising a first transimpedance amplifier comprising a first amplification stage with a first MOS transistor, a second transimpedance amplifier comprising a second amplification stage with a second MOS transistor, and a current source series-connected with the first and second amplification stages, the current source having a first terminal coupled to the drain of the first MOS transistor and a second terminal coupled to the drain of the second MOS transistor.
Abstract:
Method for fabricatingelectrical bonding pads of a wafer Method for fabricatingelectrical bonding pads on the electrical contact areas of a wafer, comprising the productionof first blocks (7) made of a solder material, the productionof second blocks(10) made of a solder material on these first blocks, and passage through an oven so as to shape the said blocks into approximately domed electrical bonding pads.
Abstract:
La partie analogique (ETA) de la chaîne de réception (CHRX) étant partitionnée en plusieurs zones (Z1,Z2), le dispositif de traitement comprend des moyens d'étalonnage aptes à effectuer une détermination de la compensation élémentaire de décalage en courant continu à appliquer dans une zone, des moyens de commande (MCM) aptes à limiter les gains d'amplification des autres zones à leurs valeurs minimales, des moyens de contrôle (MCTL) aptes, pour chaque zone, à activer les moyens d'étalonnage et les moyens de commande, et des moyens de détermination aptes à déterminer la compensation de décalage en courant continu à appliquer à ladite chaîne à partir des compensations élémentaires déterminées pour chaque zone.
Abstract:
The invention concerns a method of compressing at least a part of a digital image comprising the steps of: dividing said digital image into groups of pixels; assigning a first information (C0', C2', C1') to each group of pixels wherein said first information indicates at least two reference colours (C0, C1) selected for said group of pixels and, for each pixel in said group of pixels, which reference colour or combination thereof is selected; assigning a second information (30) to each group of pixels indicating a mode of compression used for said group of pixels; said first information indicating at least a third colour (C2) for at least one of said groups of pixels. The invention also concerns a corresponding decompressing method and data file.
Abstract:
L'invention concerne un procédé de formation de catalyseur de croissance de nanotubes/nanofibres sur les flancs de portions d'une couche d'un premier matériau, comprenant les étapes consistant à déposer une couche mince d'un deuxième matériau (14) ; ouvrir cette couche en certains emplacements ; déposer une couche très mince de catalyseur (17) ; déposer une couche (20) du premier matériau sur une épaisseur supérieure à celle de la couche du deuxième matériau ; éliminer par polissage mécano-chimique la partie supérieure de la structure jusqu'au niveau haut de la couche du deuxième matériau ; et éliminer le deuxième matériau en regard de flancs choisis des portions de couche du premier matériau.