公开(公告)号：WO2014093410A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/074226

申请日：2013-12-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： BILENKO, Yuri ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/64

CPC classification number: H01L23/367 ,  H01L33/20 ,  H01L33/38 ,  H01L33/642 ,  H01L2224/16

Abstract: A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.

Abstract translation: 提供了一种用于设备的热管理结构。 热管理结构包括电镀金属，其连接位于设备的第一侧上的第一类型的第一接触件的多个接触区域。 电镀金属可以在接触区域上形成桥接结构，用于第二类型的第二接触而不接触第二接触。 热管理结构还可以包括位于第二类型的接触区域上的绝缘材料层，在桥结构之下。

公开(公告)号：WO2013116622A1

公开(公告)日：2013-08-08

申请号：PCT/US2013/024310

申请日：2013-02-01

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SUN, Wenhong ,  JAIN, Rakesh ,  YANG, Jinwei ,  SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  GASKA, Remigijus ,  SHUR, Michael

IPC: H01L21/20 ,  H01L33/00

CPC classification number: H01L21/02587 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0684 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer. One or more of a set of growth conditions, a thickness of one or both of the layers, and/or a lattice mismatch between the layers can be configured to create a target level of compressive and/or shear stress within a minimum percentage of the interface between the layers.

Abstract translation: 提供了一种用于制造半导体结构的解决方案。 半导体结构包括使用一组外延生长周期在衬底上生长的多个半导体层。 在每个外延生长周期期间，生长具有拉伸应力或压缩应力之一的第一半导体层，然后直接在第一半导体层上生长具有另一个的拉伸应力或压缩应力的第二半导体层。 一组生长条件中的一个或多个层中的一个或两个的厚度和/或层之间的晶格失配可以被配置为在最小百分比的范围内产生压缩和/或剪切应力的目标水平 层之间的界面。

公开(公告)号：WO2012174367A2

公开(公告)日：2012-12-20

申请号：PCT/US2012/042646

申请日：2012-06-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

Inventor： SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L33/22 ,  H01L2933/0083 ,  H01L2933/0091 ,  H01S5/0224 ,  H01S5/34333

Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Abstract translation: 提供了包括用于改善辐射通过界面的传播的粗糙度分量的界面。 界面包括第一层的第一成型表面，其包括一组大的粗糙度部件，其提供具有第一特征标尺的第一成型表面的第一变型和第二层的第二成型表面，所述第二成型表面包括一组小的粗糙度部件， 具有第二特征标尺的第二成型表面的第二变型。 第一特征量级比第二特征量级大约大一个数量级。 表面可以使用接合材料粘合在一起，并且填料也可以存在于界面中。

公开(公告)号：WO2012174311A2

公开(公告)日：2012-12-20

申请号：PCT/US2012/042555

申请日：2012-06-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

Inventor： SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/22

CPC classification number: H01L33/60 ,  F21V5/002 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

公开(公告)号：WO2012068066A2

公开(公告)日：2012-05-24

申请号：PCT/US2011/060729

申请日：2011-11-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  SHUR, Michael

IPC: H01L21/28 ,  H01L33/00 ,  H01L21/328 ,  H01L29/86

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.

Abstract translation: 提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。 异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。 金属层被配置成与二维无载体气体形成接触。

公开(公告)号：WO2011069140A3

公开(公告)日：2011-09-29

申请号：PCT/US2010059003

申请日：2010-12-04

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  SHATALOV MAXIM S ,  GASKA REMIGIJUS ,  YANG JINWEI ,  SHUR MICHAEL

Inventor： SHATALOV MAXIM S ,  GASKA REMIGIJUS ,  YANG JINWEI ,  SHUR MICHAEL

IPC: H01L21/265 ,  H01L29/778 ,  H01L33/00

CPC classification number: H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

公开(公告)号：WO2008022238A2

公开(公告)日：2008-02-21

申请号：PCT/US2007/076071

申请日：2007-08-16

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  BILENKO, Yuriy ,  GASKA, Remigijus ,  SHUR, Michael

Inventor： BILENKO, Yuriy ,  GASKA, Remigijus ,  SHUR, Michael

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01S5/0425

Abstract: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

Abstract translation: 提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

公开(公告)号：WO2021188920A1

公开(公告)日：2021-09-23

申请号：PCT/US2021/023194

申请日：2021-03-19

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DION, Joseph ,  DIWAN, Devendra ,  ROBINSON, Brandon, A. ,  JAIN, Rakesh, B.

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60

Abstract: A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.

公开(公告)号：WO2019108910A1

公开(公告)日：2019-06-06

申请号：PCT/US2018/063274

申请日：2018-11-30

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： ESTES, Faris Mills Morrison ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim, S.

IPC: F21S41/65 ,  F21S41/13 ,  F21W102/10

Abstract: An approach for providing illumination with a blue UV light source, which can be used in combination with a visible light source is disclosed. In operation, the visible light source emits visible light at a first intensity. The blue UV light source emits blue UV light at a second intensity. The blue UV light stimulates fluorescence from a surface of an object illuminated by the blue UV light. A sensor can detect the intensity of the fluorescence from the surface illuminated by the blue UV light source. A control module can be operatively coupled to the visible light source, the blue UV light source, and the at least one sensor, and be configured to change the intensity of the visible light and/or the intensity of the blue UV light as a function of the fluorescent intensity detected by the sensor.

公开(公告)号：WO2018022724A2

公开(公告)日：2018-02-01

申请号：PCT/US2017/043896

申请日：2017-07-26

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SEOUL VIOSYS CO., LTD.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  BARBER, Peter ,  SHATALOV, Maxim, S.

IPC: A01G7/04 ,  A01G7/06 ,  A01N3/00

Abstract: A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet radiation in an ultraviolet range of approximately 260 nanometers to approximately 310 nanometers to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.