公开(公告)号：WO2021188920A1

公开(公告)日：2021-09-23

申请号：PCT/US2021/023194

申请日：2021-03-19

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DION, Joseph ,  DIWAN, Devendra ,  ROBINSON, Brandon, A. ,  JAIN, Rakesh, B.

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60

Abstract: A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.

公开(公告)号：EP4107792A1

公开(公告)日：2022-12-28

申请号：EP21771260.3

申请日：2021-03-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： DION, Joseph ,  DIWAN, Devendra ,  ROBINSON, Brandon, A. ,  JAIN, Rakesh, B.

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60

公开(公告)号：EP4246555A1

公开(公告)日：2023-09-20

申请号：EP23161962.8

申请日：2023-03-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： JAIN, Rakesh B. ,  LACHAB, Mohamed ,  DION, Joseph ,  ROBINSON, Brandon Alexander ,  DIWAN, Devendra ,  GEPPERT, Mark

IPC: H01L21/20

Abstract: A solution for fabricating a semiconductor structure and the corresponding semiconductor structure are provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.