A METHOD FOR PLATING A SUPPORT FOR A SILICON WAFER IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

    公开(公告)号:MY6900232A

    公开(公告)日:1969-12-31

    申请号:MY6900232

    申请日:1969-12-31

    Abstract: The preliminary treatment of a copper header for a power transistor includes attaching a nickel-clad molybdenum contact, masking the contact, and electroplating the unmasked surface with nickel, removing the mask and finally electroplating the header with gold. Prior to masking, the assembly is cleaned, first in alkali, then in a nitric-sulphuric acid mixture and flash electroplated with gold. After masking, the surface is activated in hydrochloric acid and flash plated with gold before the nickel is applied. After washing and removing the mask the header is cleaned in trichlorethylene, given a cyanide wash, activated with hydrochloric acid and flash plated with gold. After further washing the main gold-plating is applied.

    MINIATURIZED ELECTRONIC CIRCUITS AND METHOD OF FABRICATING SAME

    公开(公告)号:MY6900203A

    公开(公告)日:1969-12-31

    申请号:MY6900203

    申请日:1969-12-31

    Abstract: 999,689. Semi-conductor devices; circuit assemblies. TEXAS INSTRUMENTS Inc. Feb. 6, 1962 [Feb. 10, 1961], No. 4556/62. Headings H1K and H1R. The resistors in an electrical circuit are replaced by resistive paths in a uniform sheet or block of resistive material defined by electrodes attached to appropriately spaced points on the body. In one arrangement, Fig. 1, the resistors in a multivibrator circuit are constituted by the shaded portions of a sheet of resistive paper of 2000 ohms/square resistivity defined by the electrodes shown. Where the transistors and diodes of the circuit are small enough they may be mounted on the sheet to produce a more compact arrangement. Two resistive sheets of the type shown may be mounted end to end or may form two halves of a single sheet. In this case little interaction occurs between the two multivibrator circuits. Another possibility is for the resistive paths to be defined in a monocrystalline body in or on which the remaining components in the circuit are formed. Such an arrangement, shown in Fig. 5, is made by the following steps. An oxide layer is first formed on one face of a 5-10 ohm./cm. N-type silicon wafer, removed locally, and boron diffused into the thus exposed areas to form the P-type base zones of transistors 11, 12 and PN junctions of diodes 20, 23. The oxide is then removed from other areas and phosphorus diffused into these to form the transistor emitter zones and N + areas through which good ohmic connections may be made to the wafer. After applying aluminium by evaporation through a mask to form contacts where required, printed interconnections 52, 53 are formed by evaporating aluminium through a further mask. At the same time areas 32 1 , 37 1 are formed which, with the underlying oxide layer and wafer, constitute capacitors. The wafer thickness is then reduced by lapping the back surface. Capacitors 21, 24 are formed in situ by evaporation or are ceramic capacitors attached to the oxide layer. The remaining interconnections shown are made by gold wires thermally bonded to the wafer. In an alternative arrangement some of the connections are made to the back surface of the wafer.

    INJECTOR FOR HYPODERMICALLY IMPLANTING AN OBJECT IN A LIVING BEING

    公开(公告)号:AU2081992A

    公开(公告)日:1993-03-11

    申请号:AU2081992

    申请日:1992-08-05

    Abstract: Injector for hypodermically implanting of an object (14) in a living being. This injector comprises a housing (13), with a hollow needle (3) which can be moved in and out from the housing (13). In the hollow needle (3) a pushing rod (9) is received, to position an object (14) in a living being after introduction of the needle (3). Near the housing (13) a locking means is provided to realize positioning of the object. In the storage position, the needle (3) is inside the housing (13). For injecting, first of all the needle (3) is moved out of the housing (13) and locked. A spring (4) is tensioned by the outward movement of the needle (3). During introduction into the animal of the needle (3), a locking means will be actuated, after which the needle (3) returns and positioning of the object (14) is realized.

    PROCESS FOR PACKAGING MULTILEAD SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

    公开(公告)号:MY7300374A

    公开(公告)日:1973-12-31

    申请号:MY7300374

    申请日:1973-12-31

    Abstract: Disclosed is a method of packaging multilead semiconductor devices and the resulting product. A layer of conductive metal is bonded to a sheet of dielectric material containing a cavity. The conductive layer is masked and etched to form individual strip leads which adhere to the dielectric sheet and extend out into the cavity. A multilead semiconductor device is then located in the cavity with its contacts bondedto the strip leads extending from the dielectric sheet. Also disclosed is a multilead package for a multilead electrical device that includes a support member with at least one opening in it and a plurality of conductive ribbons formed on one surface of the support member. Each of the conductive ribbons has one end that extends into the opening and another end that terminates in close proximity to the periphery of the support member.

    COMPOSITE HEADER FOR A SEMICONDUCTOR DEVICE

    公开(公告)号:MY7300370A

    公开(公告)日:1973-12-31

    申请号:MY7300370

    申请日:1973-12-31

    Abstract: 1,163,785. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 8 Dec., 1966 [22 Dec., 1965; 5 Aug., 1966], No. 54943/66. Heading H1K. A header 1 for a semi-conductor device comprises alternate layers of glass 3 and ceramic 2, 4 fused together with leads 5-7 extending through holes 10 in the layers 2-4 and fused to the glass layer 3. The semiconductor wafer 20 is preferably mounted on an enlarged portion 6a of one of the leads 6 and an epoxy envelope 11 may be provided. Alternatively a metal eyelet (17), Fig. 3 (not shown), may be provided surrounding the header, fused to the glass layer (3), and a metal cap (14) is then welded to the eyelet (17) to seal the device. Opposed faces of the header may have recesses in one of which the semi-conductor wafer is mounted, thereby reducing the overall height of the device. An integrated circuit header of basically similar construction is also described, sealed by a metal lid fused directly to the header by a low temperature glass or fused to a metal rim provided on the header, by plastics filler or by a ceramic lid fused to the header by a layer of glass. According to the preferred method of making such a header a mixture of powdered silicate, borate or phosphate glass, a temporary polymeric binder and water is granulated and a layer of the granulated mixture is placed in a press between two layers of a similarly granulated mixture of powdered glass and aluminium or zirconium oxide. Moles are made through the layers by the provision of pins therethrough, and pressure is applied to a value of 500- 20,000 1bs./sq. inch. The resulting disc is fired in air at 300‹, then 650‹, then 750‹ C. to sinter the glass, and leads of a Ni/Fe/Co alloy or dumet are placed through the holes, light pressure being applied to hold the leads in place. The disc is then fired in a neutral atmosphere to fuse the glass layer to the leads. If the eyelet is to be provided it is placed around the disc, which is refired under light pressure to fuse the eyelet to the glass layer.

    COMPUTER DRIVEN CRT RECORDING SYSTEM

    公开(公告)号:MY7300361A

    公开(公告)日:1973-12-31

    申请号:MY7300361

    申请日:1973-12-31

    Abstract: 1,177,992. Recording seismic signals. TEXAS INSTRUMENTS Inc. 22 Sept., 1967 [30 Dec., 1966], No. 43261/67. Headings H4D and H4T. Digital signals representative of a plurality of seismic traces and derived from a data processing system are converted to corresponding analogue signals and written sequentially on a cathode-ray display tube and during the intervals between such sequential writing signals, termed annotation signals, are applied to the tube to produce symbols at preselected locations for identification and explanation of the traces. The annotation signals are produced by photo-electric means 20 (Fig. 2) in co-operation with a symbol mask 37 " illuminated " by a flying spot scanner 20a the signals being fed via position control means 38 to display tubes 15 or 16 which also receive the seismic signals in analogue form from generator 26. The displays are recorded photographically by camera means 17, 18 and are visually monitored on a further display tube 24 supplied with the seismic and annotation signals via a scan converter 22. A more detailed arrangement is described with reference to Fig. 3 (not shown), and a particular constructional arrangement of camera and display tube is described with reference to Fig. 4 (not shown).

    SEMICONDUCTOR DEVICES
    18.
    发明专利

    公开(公告)号:MY6900318A

    公开(公告)日:1969-12-31

    申请号:MY6900318

    申请日:1969-12-31

    Abstract: 958,249. Semi-conductor circuits. TEXAS INSTRUMENTS Inc. May 6, 1960 [May 6, 1959], No. 46090/63. Divided out of 958,242. Heading H1K. The subject-matter of the Specification is included in Specification 958,242. The claims relate to a circuit comprising a monocrystalline semi-conductor wafer containing a plurality of first regions, each of which overlies a second region with which it forms a PN-junction extending to a major wafer face and there defining an enclosed area. The wafer includes an elongated portion providing a current path parallel to said face with one end connected to a bias potential and the other ohmically connected to said second regions. Input connections are provided on the first regions. Specifications 945,734, 945,737, 958,244, 958,245, 958,246, 958,247 and 958,248 also are referred to.

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