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    THERMAL PROCESSING FURNACE, GAS DELIVERY SYSTEM THEREFOR, AND METHODS FOR DELIVERING A PROCESS GAS THERETO
    11.
    发明申请
    THERMAL PROCESSING FURNACE, GAS DELIVERY SYSTEM THEREFOR, AND METHODS FOR DELIVERING A PROCESS GAS THERETO 审中-公开
    热处理炉，气体输送系统及其输送过程气体的方法

    公开(公告)号：WO2007117894A1

    公开(公告)日：2007-10-18

    申请号：PCT/US2007/064461

    申请日：2007-03-21

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIP, Anthony ,  MALSTROM, Eric, J.

    Inventor： DIP, Anthony ,  MALSTROM, Eric, J.

    IPC: C30B25/14 ,  C23C16/455

    CPC classification number: H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

    Abstract: A gas delivery system for supplying a process gas from a gas supply ( 14) to a thermal processing furnace (10), a thermal processing furnace (10) equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace ( 10). The gas delivery system comprises a plurality of regulators (16, 18), such as mass flow controllers, in a process gas manifold (25) coupling a gas supply (14) with a thermal processing furnace (10). The regulators ( 16, 18) establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold (25) to the thermal processing furnace (10). The gas delivery system may be a component of the thermal processing furnace (10) that further includes a liner (38) that surrounds a processing space (26) inside the thermal processing furnace (10).

    Abstract translation: 一种用于从气体供应（14）向热处理炉（10）供应处理气体的气体输送系统，配备有气体输送系统的热处理炉（10）以及将工艺气体输送到热处理炉 （10）。 气体输送系统包括在将气体供应（14）与热处理炉（10）连接的工艺气体歧管（25）中的多个调节器（16,18），例如质量流量控制器。 调节器（16,18）以由处理气体歧管（25）传递到热处理炉（10）的多个流速建立相应的多个处理气体流。 气体输送系统可以是热处理炉（10）的组件，其还包括围绕热处理炉（10）内的处理空间（26）的衬套（38）。

    METHOD FOR PURIFYING A METAL CARBONYL PRECURSOR
    13.
    发明申请
    METHOD FOR PURIFYING A METAL CARBONYL PRECURSOR 审中-公开
    用于净化金属碳前驱体的方法

    公开(公告)号：WO2007040596A1

    公开(公告)日：2007-04-12

    申请号：PCT/US2006/007675

    申请日：2006-03-02

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

    Inventor： SUZUKI, Kenji

    IPC: C23C16/44 ,  H01L21/32 ,  B01D47/02

    CPC classification number: C23C16/4402 ,  C23C16/16

    Abstract: A method of purifying a metal carbonyl precursor (3a) in a metal precursor vaporization system (2) where the metal carbonyl precursor (3a) comprises a metal particulate impurity (3b). The method includes flowing a CO-containing gas through the metal precursor vaporization system (2) to a precursor collection system (7) in fluid communication with the metal precursor vaporization system (2) to separate the metal carbonyl precursor (3a) from the metal particulate impurity (3b) and to transfer the metal carbonyl precursor (3a) to the precursor collection system (7), and collecting the transferred metal carbonyl precursor (3a) in the precursor collection system (7), where an amount of the metal particulate impurity (3b) is lower in the precursor collection system (7) than in the precursor vaporization system (2) and the precursor collection system (7) is maintained at a lower temperature than the metal precursor vaporization system (2). A metal carbonyl precursor parameter may be monitored to determine a status of the metal carbonyl precursor (3a) and the need for purifying the metal carbonyl precursor (3a).

    Abstract translation: 在金属前体蒸发系统（2）中纯化羰基金属前体（3a）的方法，其中金属羰基前体（3a）包含金属颗粒杂质（3b）。 该方法包括将含CO的气体通过金属前体蒸发系统（2）流动到与金属前体蒸发系统（2）流体连通的前体收集系统（7），以将金属羰基前体（3a）与金属 颗粒杂质（3b），并将金属羰基前体（3a）转移到前体收集系统（7），并收集前体收集系统（7）中转移的金属羰基前体（3a），其中一定量的金属颗粒 前体收集系统（7）中的杂质（3b）比前体蒸发系统（2）中的低，并且前体收集系统（7）保持在比金属前体蒸发系统（2）更低的温度。 可以监测金属羰基前体参数以确定金属羰基前体（3a）的状态和对金属羰基前体（3a）的纯化的需要。

    IN-SITU ATOMIC LAYER DEPOSITION
    14.
    发明申请
    IN-SITU ATOMIC LAYER DEPOSITION 审中-公开
    现场原子层沉积

    公开(公告)号：WO2007019449A1

    公开(公告)日：2007-02-15

    申请号：PCT/US2006/030735

    申请日：2006-08-04

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIP, Anthony ,  SASAKI, Sadao ,  TOELLER, Michael ,  REID, Kimberly, G.

    Inventor： DIP, Anthony ,  SASAKI, Sadao ,  TOELLER, Michael ,  REID, Kimberly, G.

    IPC: C23C16/448 ,  C23C16/455 ,  C23C16/40 ,  H01L21/316

    CPC classification number: H01L21/3141 ,  C23C16/0236 ,  C23C16/405 ,  C23C16/45546 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/31645

    Abstract: An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system (1, 100). The method comprises first loading a plurality of wafers (40, 110) into a process chamber (10, 102), and then pre-treating the plurality of wafers (40, 110) in the process chamber (10, 102) with a first oxidizer. After pre-treating the wafers (40, 110), and without removing the wafers (40, 110) from the process chamber (10, 102), the method then comprises depositing HfO2 on the plurality of wafers (40, 110) by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers (40, 110) in the process chamber (40, 110) to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

    Abstract translation: 一种用于在间歇晶片处理系统（1,100）中形成HfO 2高k电介质层的原位方法。 该方法包括首先将多个晶片（40,110）装载到处理室（10,102）中，然后用处理室（10,102）预处理处理室（10,102）中的多个晶片（40,110） 氧化剂。 在对晶片（40,110）进行预处理之后，并且不从处理室（10,102）移除晶片（40,110），然后该方法包括通过原子沉积多个晶片（40,110）上的HfO 2 层沉积，其包括多个沉积循环，每个循环包括将处理室（40,110）中的多个晶片（40,110）交替暴露于第二氧化剂和铪前体。 铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。

    TREATMENT OF SUBSTRATE USING FUCTIONALIZING AGENT IN SUPERCRITICAL CARBON DIOXIDE
    15.
    发明申请
    TREATMENT OF SUBSTRATE USING FUCTIONALIZING AGENT IN SUPERCRITICAL CARBON DIOXIDE 审中-公开
    在超临界二氧化碳中使用结垢剂处理基材

    公开(公告)号：WO2006124321A2

    公开(公告)日：2006-11-23

    申请号：PCT/US2006/017294

    申请日：2006-05-02

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KEVWITCH, Robert

    Inventor： KEVWITCH, Robert

    IPC: G03F7/42 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

    CPC classification number: H01L21/0206 ,  G03F7/427 ,  H01L21/02071

    Abstract: During the processing of substrates (105), the substrate surface may be subjected to a cleaning process using supercritical CO 2 . Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO 2 . For example, an oxidation cleaning process causes the substrate structure (105) to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO 2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate (105) with supercritical CO 2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO 2 and are more easily removed than their predecessors.

    Abstract translation: 在处理基板（105）期间，可以使用超临界CO 2 2对基板表面进行清洁处理。 例如，表面物质可以保留，因为它仅在极限可溶于超临界CO 2 2中。 例如，氧化清洁过程使得底物结构（105）在几个点处裂开，留下较小的氧化残余物碎片。 由于由氧化产生的极性成分，该残余物在超临界CO 2 2中仅具有最小的溶解度。 因此，该方法还包括用超临界CO 2处理衬底（105）和可以与较小碎片和/或其它较不溶的组分反应的官能化剂。 这些官能化组分在超临界CO 2中更易溶解，并且比其前辈更容易除去。

    METHOD AND SYSTEM FOR FORMING AVARIABLE THICKNESS SEED LAYER
    16.
    发明申请
    METHOD AND SYSTEM FOR FORMING AVARIABLE THICKNESS SEED LAYER 审中-公开
    用于形成可变厚度种子层的方法和系统

    公开(公告)号：WO2006104647A3

    公开(公告)日：2006-11-16

    申请号：PCT/US2006008112

    申请日：2006-03-07

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  MATSUDA TSUKASA

    Inventor： MATSUDA TSUKASA

    IPC: C23C16/455

    CPC classification number: C23C16/18 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873

    Abstract: A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).

    Abstract translation: 一种用于在随后的金属电化学电镀工艺中在衬底（25,100,110）上形成可变厚度晶种层（102,116）的方法和系统（1），其中晶种层厚度分布改善了电镀金属层 与使用恒定厚度种子层时相比。 该方法包括在包含喷头（30）的处理室（10）中提供衬底（25,100,110），衬底（25,100,110）的中心（106,122）大致与衬底 （30）的气体输送区域（32）和基板（25,100,110）的边缘（104,120）大致与喷头（30）的外部气体输送区域（34）对齐。 该方法进一步包括通过将衬底（25,100,110）暴露于含有流经内部气体输送装置的含金属前体的第一气体而在衬底（25,100,110）上沉积种子层（102,116） （32），并且将所述衬底（25,100,110）暴露于流经所述外部气体输送区域（34）的第二气体，由此所述籽晶层（102,116）在所述边缘（104） （25,100,110）的中心（106,122）处的厚度小于所述衬底（25,100,110）的厚度。

    METHOD AND SYSTEM FOR PRECURSOR DELIVERY
    17.
    发明申请
    METHOD AND SYSTEM FOR PRECURSOR DELIVERY 审中-公开
    用于前向交付的方法和系统

    公开(公告)号：WO2006104794A1

    公开(公告)日：2006-10-05

    申请号：PCT/US2006/010351

    申请日：2006-03-22

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  FAGUET, Jacques

    Inventor： FAGUET, Jacques

    IPC: C23C16/448 ,  C23C16/455

    CPC classification number: C23C16/4481 ,  C23C16/45525 ,  C23C16/45544

    Abstract: A method (300) for precursor delivery includes transferring a precursor vapor from a precursor vaporization system (50, 150) to an intermediate precursor chamber (46, 146), collecting the precursor vapor in the intermediate precursor chamber (46, 146), flowing a process gas containing the collected precursor vapor to a process chamber (10, 110), and exposing a substrate (25, 125) in the process chamber (10, 110) to the process gas to deposit a layer including at least one element from the precursor vapor on the substrate (25, 125).

    Abstract translation: 用于前体输送的方法（300）包括将前体蒸气从前体蒸发系统（50,150）转移到中间前体室（46,146），将前体蒸气收集在中间前体室（46,146）中，流动 包含收集的前体蒸汽到处理室（10,110）的工艺气体，以及将处理室（10,110）中的衬底（25,125）暴露于工艺气体以沉积包含至少一种元素的层 在基底（25,125）上的前体蒸汽。

    LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS
    20.
    发明申请
    LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS 审中-公开
    低温等离子体增强化学气相沉积含硅纳米薄膜

    公开(公告)号：WO2006019438A3

    公开(公告)日：2006-07-13

    申请号：PCT/US2005014218

    申请日：2005-04-26

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  JOE RAYMOND

    Inventor： JOE RAYMOND

    IPC: C23C16/452 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36

    CPC classification number: H01L21/3185 ,  C23C16/30 ,  C23C16/345 ,  C23C16/452 ,  H01L21/3125

    Abstract: A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate (40,125). The method includes providing a substrate (40, 125) in a process chamber (10, 110), exciting a reactant gas in a remote plasma source (94, 205), thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate (40, 125) from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film.

    Abstract translation: 一种用于在衬底上的含硅氮膜的低温等离子体增强化学气相沉积的方法（40,125）。 该方法包括在处理室（10,110）中提供衬底（40,125），激发远程等离子体源（94,205）中的反应气体，然后将所激发的反应气体与硅氮烷前体气体混合，并沉积 在化学气相沉积工艺中从激发的气体混合物在衬底（40,125）上的含硅氮膜。 在本发明的一个实施方案中，反应物气体可以含有含氮气体以沉积SiCNH膜。 在本发明的另一个实施方案中，反应气体可以含有含氧气体以沉积SiCNOH膜。

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