-
11.发明公开公开(公告)号：US20230182342A1
公开(公告)日：2023-06-15
申请号：US17917138
申请日：2021-04-08
Applicant: UNIVERSITE DE LORRAINE , INSTITUT MINES TELECOM , UNIVERSITE LIBANAISE
Inventor： Nicolas BROSSE , Romain KAPEL , Rodolphe SONNIER , Roland EL HAGE , César SEGOVIA , Karina ANTOUN , Maria MOUSSA
CPC classification number: B27K3/0207 , B27K3/50 , B27K3/346 , B27K3/36 , B27K3/38
Abstract: A flame retardant treatment of a lignocellulosic material, which includes: optionally steam exploding the lignocellulosic material, impregnating the optionally steam-exploded lignocellulosic material, in or with an aqueous solution, from 0.5% to 10% of phytic acid and from 1% to 30% of urea, based on the total weight of the aqueous solution, optionally drying of the impregnated lignocellulosic material, until the impregnated lignocellulosic material has a moisture content from 5% to 20% by weight, cooking the impregnated and optionally dried lignocellulosic material, the resulting flame-retarded lignocellulosic material including a phosphorous content originating from the phytic acid from 0.1% to 10% by weight. Also, the resulting flame-retarded lignocellulosic material and the use thereof for manufacturing flame-retarded composite materials based on plant fibres, woven or nonwoven flame-retarded flexible materials based on plant fibres, and particularly textiles, flame-retarded materials based on wood fibres and/or on wood particles, and particularly flame-retarded wood panels.
-
12.发明授权公开(公告)号：US11515986B2
公开(公告)日：2022-11-29
申请号：US17042453
申请日：2019-03-20
Inventor： Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
Abstract: A mechanism is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase, a first user is selected for a sub band, for example on the basis of a user priority. Users having complementary channel gains to that of the first user are identified, and then a second sub-band user maximizing a performance metric reflecting the achieved throughput, and/or fairness across users, is selected to accompany the first user on that sub-band. The initial assignment phase may terminate once all users have been assigned to a sub-band once. After the first phase is complete, the first user for each sub-band may be the user whose achieved total throughput is furthest from a target throughput defined for that user, wherein each user is assigned to the remaining sub-band to which no first user is currently attributed offering the highest channel gain for that user. Mechanisms for determining user priority, making provisional and definitive power allocations, and performance metrics are proposed.
-
13.发明授权公开(公告)号：US11323970B2
公开(公告)日：2022-05-03
申请号：US17042464
申请日：2019-03-20
Inventor： Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
Abstract: A system and method for assigning users to a particular sub band in a given time slot in a NOMA system, where whichever pair of users corresponds to the smallest “candidate pair user throughput deviation value”, reflecting the aggregate of the respective difference between the average throughput across all users (K) and the known throughput of each of the two users under consideration (k1k2), and each user attributed to a sub-band other than the selected sub-band. User pairs for consideration may consider all possible pairs, or may be limited to candidate pairs satisfying together, or comprising one or both users who satisfy a criterion such as channel gain, distance to a target, throughput or a combination of some or all of these factors. The power allocated to each sub-band may be attributed by a waterfilling algorithm.
-
公开(公告)号：US09831331B2
公开(公告)日：2017-11-28
申请号：US15028671
申请日：2014-10-10
Inventor： Frédéric Morancho , Saleem Hamady , Bilal Beydoun
IPC: H01L29/66 , H01L21/338 , H01L29/778 , H01L29/10 , H01L29/20
CPC classification number: H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66431 , H01L29/7783
Abstract: A heterojunction structure of semiconductor material, for a high electron mobility transistor includes a substrate, a buffer layer, arranged on the substrate, of a large bandgap semiconductor material, based on a nitride from column III, where the buffer layer is not intentionally doped with n-type carriers, a barrier layer arranged above the buffer layer, of a large bandgap semiconductor material based on a nitride from column III, where the width of the bandgap of the barrier layer is less than the width of the bandgap of the buffer layer. The heterojunction structure additionally comprises an intentionally doped area, of a material based on a nitride from column III identical to the material of the buffer layer, in a plane parallel to the plane of the substrate and a predefined thickness along a direction orthogonal to the plane of the substrate, where the area is comprised in the buffer layer.
-
公开(公告)号：WO2016097576A1
公开(公告)日：2016-06-23
申请号：PCT/FR2015/053503
申请日：2015-12-15
Inventor： MORANCHO, Frédéric , HAMADY, Saleem , BEYDOUN, Bilal
IPC: H01L29/778 , H01L21/338 , H01L21/336 , H01L29/10 , H01L29/20
CPC classification number: H01L29/66462 , H01L29/1054 , H01L29/1075 , H01L29/1083 , H01L29/2003 , H01L29/778 , H01L29/7786
Abstract: Structure à hétérojonction, dite aussi hétéro-structure, en matériau semi-conducteur, notamment pour un transistor à grande mobilité d'électrons (HEMT) comprenant un substrat (4), un empilement d'au moins trois couches tampons en un même matériau semi-conducteur à large bande interdite EG1 à base de nitrure de la colonne, dont une première couche tampon (6) non intentionnellement dopée, une deuxième couche tampon (8), une troisième couche tampon (10) non intentionnellement dopée, une couche intermédiaire non intentionnellement dopée (11) et une couche barrière (12) disposée sur la couche intermédiaire (11), ladite couche barrière (12) étant en un matériau semi-conducteur à large bande interdite EG2 à base de nitrure de la colonne III; la deuxième couche tampon (8) présente un dopage de type P+ constant sur tout ou partie de son épaisseur; et la troisième couche tampon (10) présente une première région (16) non intentionnellement dopée sur toute son épaisseur ainsi qu'au moins une deuxième région (18) adjacente à ladite première région avec un dopage N+ entourant la première région (16).
Abstract translation: 半导体异质结结构，即也称为异质结构，特别是高电子迁移率晶体管（HEMT）的异质结构，包括基板（4）和由宽带隙基于EG1的相同半导体制成的至少三个缓冲层的叠层 在无定形掺杂的第一缓冲层（6），第二缓冲层（8）和无意掺杂的第三缓冲层（10），无意掺杂的中间层（11）和阻挡层（12）上的氮化物上， 放置在中间层（11）上，所述阻挡层（12）基于列III的氮化物由宽带隙EG2的半导体制成; 第二缓冲层（8）通过其厚度的全部或部分具有恒定的p +型掺杂剂浓度; 并且第三缓冲层（10）具有通过其厚度的第一无意义掺杂区域（16）和与所述第一区域相邻的至少一个第二区域（18），其围绕第一区域（16）包围n +掺杂。
-
Patent Agency Ranking16.发明申请
公开(公告)号：WO2019185430A1
公开(公告)日：2019-10-03
申请号：PCT/EP2019/057010
申请日：2019-03-20
Inventor： HOJEIJ, Marie-Rita , ABDEL NOUR, Charbel , FARAH, Joumana , DOUILLARD, Catherine
IPC: H04W52/34
Abstract: A method and system for assigning power to sub-bands in a multiple access communications system, where users are assigned iteratively to sub-bands, and at each iteration a provisional partial power budget is determined for the subset of sub-bands comprising the sub-bands to which users have been assigned in the present time slot and the sub-band under consideration in the sequence, where the fraction of the total available power determined as the provisional partial power budget corresponds to the fraction of the number of sub-bands in the subset from the total number of sub-bands to be assigned, and the provisional power allocation for the sub-band under consideration is obtained by performing a waterfilling distribution of the provisional partial power budget amongst the subset of the sub-bands, based on the channel gain of the users already assigned to sub-bands in the present time slot.
-
公开(公告)号：WO2015052456A1
公开(公告)日：2015-04-16
申请号：PCT/FR2014/052587
申请日：2014-10-10
Inventor： MORANCHO, Frédéric , HAMADY, Saleem , BEYDOUN, Bilal
IPC: H01L29/778 , H01L29/10
CPC classification number: H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66431 , H01L29/7783
Abstract: Structure à hétérojonction, dite aussi hétéro-structure, en matériau semi-conducteur, notamment pour un transistor à grande mobilité d'électrons (HEMT) comprenant un substrat, une couche tampon disposée sur le substrat en un matériau semi-conducteur à large bande interdite à base de nitrure de la colonne III, ladite couche tampon (1) étant non-intentionnellement dopée avec des porteurs de type N, une couche barrière, disposée au-dessus de la couche tampon, en un matériau semi-conducteur à large bande interdite Eg2 à base de nitrure de la colonne III, la largeur de bande interdite Eg2 de la couche barrière étant inférieure à la largeur de bande interdite Eg1 de la couche tampon. La structure à hétérojonction comprenant en outre une zone intentionnellement dopée, en un matériau de la colonne III identique au matériau de la couche tampon, dans un plan parallèle au plan du substrat et d'une épaisseur déterminée suivant une direction orthogonale au plan du substrat, ladite zone étant comprise dans la couche tampon.
Abstract translation: 一种由半导体材料制成的异质结结构，特别是用于包含衬底的高电子迁移率晶体管（HEMT）的异质结结构，设置在由宽带隙半导体材料制成的衬底上的缓冲层 列III族氮化物，所述缓冲层（1）被无意地掺杂有N型载流子，阻挡层设置在缓冲层的顶部，由由III-III族氮化物制成的宽带隙Eg2半导体材料制成， 阻挡层的带隙Eg2的宽度小于缓冲层的带隙Eg1的宽度。 该异质结结构还包括在平行于衬底的平面的平面中由与柱状材料相同的柱III材料制成的有意掺杂的区域，并且具有在垂直于衬底的平面的方向上限定的厚度 衬底，所述区域包括在缓冲层中。
-
18.发明申请
公开(公告)号：WO2019185429A1
公开(公告)日：2019-10-03
申请号：PCT/EP2019/057008
申请日：2019-03-20
Inventor： HOJEIJ, Marie-Rita , ABDEL NOUR, Charbel , FARAH, Joumana , DOUILLARD, Catherine
Abstract: A system and method for assigning users to a particular sub band in a given time slot in a NOMA system, where whichever pair of users corresponds to the smallest "candidate pair user throughput deviation value", reflecting the aggregate of the respective difference between the average throughput across all users (K) and the known throughput of each of the two users under consideration ( k 1 k 2 ), and each user attributed to a sub-band other than said selected sub-band. User pairs for consideration may consider all possible pairs, or may be limited to candidate pairs satisfying together, or comprising one or both users who satisfy a criterion such as channel gain, distance to a target, throughput or a combination of some or all of these factors. The power allocated to each sub-band may be attributed by a waterfilling algorithm.
-
19.发明申请
公开(公告)号：WO2019185427A1
公开(公告)日：2019-10-03
申请号：PCT/EP2019/057003
申请日：2019-03-20
Inventor： HOJEIJ, Marie-Rita , ABDEL NOUR, Charbel , FARAH, Joumana , DOUILLARD, Catherine
IPC: H04L5/00
Abstract: A mechanism is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, in which in an initial assignment phase, a first user is selected for a sub band, for example on the basis of a user priority. Users having complementary channel gains to that of the first user are identified, and then a second sub-band user maximizing a performance metric reflecting the achieved throughput, and/or fairness across users, is selected to accompany the first user on that sub-band. The initial assignment phase may terminate once all users have been assigned to a sub-band once. After the first phase is complete, the first user for each sub- band may be the user whose achieved total throughput is furthest from a target throughput defined for that user, wherein each user is assigned to the remaining sub-band to which no first user is currently attributed offering the highest channel gain for that user. Mechanisms for determining user priority, making provisional and definitive power allocations, and performance metrics are proposed.
-
20.发明申请
公开(公告)号：WO2021205128A2
公开(公告)日：2021-10-14
申请号：PCT/FR2021/050628
申请日：2021-04-08
Applicant: UNIVERSITE DE LORRAINE , INSTITUT MINES TELECOM , UNIVERSITE LIBANAISE
Inventor： BROSSE, Nicolas , KAPEL, Romain , SONNIER, Rodolphe , EL HAGE, Roland , SEGOVIA, César , ANTOUN, Karina , MOUSSA, Maria
IPC: B27K3/02 , B27K3/34 , B27K3/42 , B27K3/50 , C07C273/00 , C07F9/117 , C08L97/02 , C09K21/00 , D06M13/00 , B27K2240/30 , B27K3/0207 , B27K3/343 , B27K3/346 , D06L4/24 , D06M13/292 , D06M13/432 , D06M15/433 , D06M2101/06 , D06M2200/30
Abstract: La présente invention a pour objet un procédé d'ignifugation d'une matière lignocellulosique caractérisé en ce qu'il comprend les étapes suivantes : - éventuellement explosion à la vapeur de la matière lignocellulosique, - imprégnation de la matière lignocellulosique, éventuellement explosée à la vapeur, dans ou avec une solution aqueuse comprenant de 0,5% à 10% d'acide phytique et de 1% à 30% d'urée, et de préférence de 3% à 7% d'acide phytique et de 15% à 22% d'urée, lesdits pourcentages étant exprimés en masse par rapport à la masse totale de la solution aqueuse, - éventuellement séchage de la matière lignocellulosique imprégnée, jusqu'à ce qu'elle présente une humidité allant de 5% à 20%, lesdits pourcentages étant exprimés en masse par rapport à la masse totale de la matière lignocellulosique imprégnée, - cuisson de la matière lignocellulosique imprégnée et éventuellement séchée, la matière lignocellulosique ignifugée ainsi obtenue comprenant une teneur en phosphore provenant de l'acide phytique allant de 0,1 % à 10%, de préférence allant de 0,3 % à 3%, lesdits pourcentages étant exprimés en masse par rapport à la masse totale de la matière lignocellulosique ignifugée. L'invention concerne encore la matière lignocellulosique ignifugée ainsi obtenue et son utilisation pour la fabrication : - de matériaux composites ignifugés à base de fibres végétales, - de matériaux souples ignifugés tissés ou non tissés à base de fibres végétales, et notamment de textiles, - de matériaux ignifugés à base de fibres de bois et/ou de particules de bois, et notamment de panneaux de bois ignifugés.
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.026 seconds)
