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公开(公告)号:US11964407B2
公开(公告)日:2024-04-23
申请号:US17917138
申请日:2021-04-08
Applicant: UNIVERSITE DE LORRAINE , INSTITUT MINES TELECOM , UNIVERSITE LIBANAISE
Inventor: Nicolas Brosse , Romain Kapel , Rodolphe Sonnier , Roland El Hage , César Segovia , Karina Antoun , Maria Moussa
CPC classification number: B27K3/0207 , B27K3/346 , B27K3/36 , B27K3/38 , B27K3/50
Abstract: A flame retardant treatment of a lignocellulosic material, which includes: optionally steam exploding the lignocellulosic material, impregnating the optionally steam-exploded lignocellulosic material, in or with an aqueous solution, from 0.5% to 10% of phytic acid and from 1% to 30% of urea, based on the total weight of the aqueous solution, optionally drying of the impregnated lignocellulosic material, until the impregnated lignocellulosic material has a moisture content from 5% to 20% by weight, cooking the impregnated and optionally dried lignocellulosic material, the resulting flame-retarded lignocellulosic material including a phosphorous content originating from the phytic acid from 0.1% to 10% by weight. Also, the resulting flame-retarded lignocellulosic material and the use thereof for manufacturing flame-retarded composite materials based on plant fibres, woven or nonwoven flame-retarded flexible materials based on plant fibres, and particularly textiles, flame-retarded materials based on wood fibres and/or on wood particles, and particularly flame-retarded wood panels.
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2.
公开(公告)号:US20210022089A1
公开(公告)日:2021-01-21
申请号:US17042464
申请日:2019-03-20
Inventor: Marie-Rita HOJEIJ , Charbel ABDEL NOUR , Joumana FARAH , Catherine DOUILLARD
Abstract: A system and method for assigning users to a particular sub band in a given time slot in a NOMA system, where whichever pair of users corresponds to the smallest “candidate pair user throughput deviation value”, reflecting the aggregate of the respective difference between the average throughput across all users (K) and the known throughput of each of the two users under consideration (k1k2), and each user attributed to a sub-band other than the selected sub-band. User pairs for consideration may consider all possible pairs, or may be limited to candidate pairs satisfying together, or comprising one or both users who satisfy a criterion such as channel gain, distance to a target, throughput or a combination of some or all of these factors. The power allocated to each sub-band may be attributed by a waterfilling algorithm.
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公开(公告)号:US20210021396A1
公开(公告)日:2021-01-21
申请号:US17042478
申请日:2019-03-20
Inventor: Marie-Rita HOJEIJ , Charbel ABDEL NOUR , Joumana FARAH , Catherine DOUILLARD
IPC: H04L5/00
Abstract: A method of determining a performance metric for a selection of a first user and a second user among a set of candidate users for attribution to a sub-band in a multiple access communications system based on Non-Orthogonal Multiple Access (NOMA), is provided wherein the first user (k1) and the second user (k2) are selected as the pair of candidate users corresponding to an extremum of the ratio between a first term reflecting the total throughput achievable by any pair of the candidate users assigned to the sub-band (s) under consideration, and a second term reflecting the known throughput achieved by that same pair of candidate users over a predetermined preceding period. Implementations include a method of determining a performance metric is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase for a specific sub-band, a first user is selected for that band on the basis of one or more criteria such as user priority. Then a second sub-band user maximizing or minimizing the performance metric.
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4.
公开(公告)号:US20210083814A1
公开(公告)日:2021-03-18
申请号:US17042453
申请日:2019-03-20
Inventor: Marie-Rita HOJEIJ , Charbel ABDEL NOUR , Joumana FARAH , Catherine DOUILLARD
Abstract: A mechanism is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase, a first user is selected for a sub band, for example on the basis of a user priority. Users having complementary channel gains to that of the first user are identified, and then a second sub-band user maximizing a performance metric reflecting the achieved throughput, and/or fairness across users, is selected to accompany the first user on that sub-band. The initial assignment phase may terminate once all users have been assigned to a sub-band once. After the first phase is complete, the first user for each sub-band may be the user whose achieved total throughput is furthest from a target throughput defined for that user, wherein each user is assigned to the remaining sub-band to which no first user is currently attributed offering the highest channel gain for that user. Mechanisms for determining user priority, making provisional and definitive power allocations, and performance metrics are proposed.
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5.
公开(公告)号:US20210022088A1
公开(公告)日:2021-01-21
申请号:US16982007
申请日:2019-03-20
Inventor: Marie-Rita HOJEIJ , Charbel ABDEL NOUR , Joumana FARAH , Catherine DOUILLARD
Abstract: A method and system for assigning power to sub-bands in a multiple access communications system, where users are assigned iteratively to sub-bands, and at each iteration a provisional partial power budget is determined for the subset of sub-bands comprising the sub-bands to which users have been assigned in the present time slot and the sub-band under consideration in the sequence, where the fraction of the total available power determined as the provisional partial power budget corresponds to the fraction of the number of sub-bands in the subset from the total number of sub-bands to be assigned, and the provisional power allocation for the sub-band under consideration is obtained by performing a waterfilling distribution of the provisional partial power budget amongst the subset of the sub-bands, based on the channel gain of the users already assigned to sub-bands in the present time slot.
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公开(公告)号:US10177239B2
公开(公告)日:2019-01-08
申请号:US15535933
申请日:2015-12-15
Inventor: Frédéric Morancho , Saleem Hamady , Bilal Beydoun
IPC: H01L29/66 , H01L29/10 , H01L29/778 , H01L29/20
Abstract: Heterojunction structure, also referred to as a heterostructure, of semiconductor material, in particular for a high electron mobility transistor (HEMT), includes a substrate, a stack of at least three buffer layers of a same semiconductor material with a wide bandgap EG1 based on a column-III nitride, namely an unintentionally doped first buffer layer, a second buffer layer, an unintentionally doped third buffer layer, an unintentionally doped intermediate layer, and a barrier layer arranged on the intermediate layer, said barrier layer being of a semiconductor material with a wide bandgap EG2 based on a column-III nitride; the second buffer layer has constant P+ doping throughout some or all of its thickness; and the third buffer layer includes a first region which is unintentionally doped throughout its entire thickness and at least one second region adjacent to said first region with N+ doping surrounding the first region.
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公开(公告)号:US20180069090A1
公开(公告)日:2018-03-08
申请号:US15535933
申请日:2015-12-15
Inventor: Frédéric MORANCHO , Saleem HAMADY , Bilal BEYDOUN
IPC: H01L29/66 , H01L29/10 , H01L29/778
CPC classification number: H01L29/66462 , H01L29/1054 , H01L29/1075 , H01L29/1083 , H01L29/2003 , H01L29/778 , H01L29/7786
Abstract: Heterojunction structure, also referred to as a heterostructure, of semiconductor material, in particular for a high electron mobility transistor (HEMT), includes a substrate, a stack of at least three buffer layers of a same semiconductor material with a wide bandgap EG1 based on a column-III nitride, namely an unintentionally doped first buffer layer, a second buffer layer, an unintentionally doped third buffer layer, an unintentionally doped intermediate layer, and a barrier layer arranged on the intermediate layer, said barrier layer being of a semiconductor material with a wide bandgap EG2 based on a column-III nitride; the second buffer layer has constant P+ doping throughout some or all of its thickness; and the third buffer layer includes a first region which is unintentionally doped throughout its entire thickness and at least one second region adjacent to said first region with N+ doping surrounding the first region.
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8.
公开(公告)号:US11737034B2
公开(公告)日:2023-08-22
申请号:US16982007
申请日:2019-03-20
Inventor: Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
IPC: H04W52/34 , H04W52/42 , H04W72/044 , H04W72/542
CPC classification number: H04W52/346 , H04W52/42 , H04W72/044 , H04W72/542
Abstract: A method and system for assigning power to sub-bands in a multiple access communications system, where users are assigned iteratively to sub-bands, and at each iteration a provisional partial power budget is determined for the subset of sub-bands comprising the sub-bands to which users have been assigned in the present time slot and the sub-band under consideration in the sequence, where the fraction of the total available power determined as the provisional partial power budget corresponds to the fraction of the number of sub-bands in the subset from the total number of sub-bands to be assigned, and the provisional power allocation for the sub-band under consideration is obtained by performing a waterfilling distribution of the provisional partial power budget amongst the subset of the sub-bands, based on the channel gain of the users already assigned to sub-bands in the present time slot.
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公开(公告)号:US11296852B2
公开(公告)日:2022-04-05
申请号:US17042478
申请日:2019-03-20
Inventor: Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
IPC: H04L5/00
Abstract: A method of determining a performance metric for a selection of a first user and a second user among a set of candidate users for attribution to a sub-band in a multiple access communications system based on Non-Orthogonal Multiple Access (NOMA), is provided wherein the first user (k1) and the second user (k2) are selected as the pair of candidate users corresponding to an extremum of the ratio between a first term reflecting the total throughput achievable by any pair of the candidate users assigned to the sub-band (s) under consideration, and a second term reflecting the known throughput achieved by that same pair of candidate users over a predetermined preceding period. Implementations include a method of determining a performance metric is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase for a specific sub-band, a first user is selected for that band on the basis of one or more criteria such as user priority. Then a second sub-band user maximizing or minimizing the performance metric.
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公开(公告)号:US20160254377A1
公开(公告)日:2016-09-01
申请号:US15028671
申请日:2014-10-10
Inventor: Frédéric Morancho , Saleem Hamady , Bilal Beydoun
IPC: H01L29/778 , H01L29/205 , H01L29/66 , H01L29/20
CPC classification number: H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66431 , H01L29/7783
Abstract: A heterojunction structure of semiconductor material, for a high electron mobility transistor includes a substrate, a buffer layer, arranged on the substrate, of a large bandgap semiconductor material, based on a nitride from column III, where the buffer layer is not intentionally doped with n-type carriers, a barrier layer arranged above the buffer layer, of a large bandgap semiconductor material based on a nitride from column III, where the width of the bandgap of the barrier layer is less than the width of the bandgap of the buffer layer. The heterojunction structure additionally comprises an intentionally doped area, of a material based on a nitride from column III identical to the material of the buffer layer, in a plane parallel to the plane of the substrate and a predefined thickness along a direction orthogonal to the plane of the substrate, where the area is comprised in the buffer layer.
Abstract translation: 对于高电子迁移率晶体管,用于高电子迁移率晶体管的异质结结构包括基于来自第III列的氮化物的大带隙半导体材料的布置在衬底上的衬底,缓冲层,其中缓冲层不是有意地掺杂有 基于来自第III列的氮化物的大带隙半导体材料的n型载流子,设置在缓冲层上方的阻挡层,其中阻挡层的带隙的宽度小于缓冲层的带隙的宽度 。 该异质结结构还包括有意地掺杂的区域,基于与平行于衬底的平面的平面相同的来自第III列的缓冲层材料的氮化物的材料和沿着与该平面垂直的方向的预定厚度 的衬底,其中该区域包括在缓冲层中。
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