公开(公告)号：WO2006113573A1

公开(公告)日：2006-10-26

申请号：PCT/US2006/014321

申请日：2006-04-17

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KORZENSKI, Michael B. ,  GHENCIU, Eliodor G. ,  XU, Chongying ,  BAUM, Thomas H. ,  VISINTIN, Pamela M.

Inventor： KORZENSKI, Michael B. ,  GHENCIU, Eliodor G. ,  XU, Chongying ,  BAUM, Thomas H. ,  VISINTIN, Pamela M.

IPC: C23G1/00 ,  B05C11/02

CPC classification number: C23C18/00 ,  B08B7/0021 ,  G03F7/422 ,  G03F7/427 ,  H01L21/02101

Abstract: A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.

Abstract translation: 一种用于将薄膜沉积到微电子器件上的连续流超临界流体（SCF）装置和方法，或从其上具有相同的微电子装置去除不需要的层，颗粒和/或残余物。 SCF设备优选地包括动态混合器以确保SCF和其它化学组分的均匀混合。

公开(公告)号：WO2008080097A3

公开(公告)日：2008-10-09

申请号：PCT/US2007088644

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

IPC: C11D11/00 ,  C11D1/62 ,  C11D3/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50

CPC classification number: C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

Abstract translation: 用于从其上具有所述残余物的微电子装置清除等离子体后蚀刻残留物的清洁组合物和方法。 该组合物实现了对来自微电子器件的残留物材料（包括含钛，含铜，含钨和/或含钴的蚀刻后残留物）的高效清洁，同时不损伤层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 另外，该组合物可用于从其上具有相同材料的微电子器件去除氮化钛层。

公开(公告)号：WO2008058173A2

公开(公告)日：2008-05-15

申请号：PCT/US2007/083891

申请日：2007-11-07

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela M. ,  KORZENSKI, Michael B.

Inventor： VISINTIN, Pamela M. ,  KORZENSKI, Michael B.

IPC: C11D3/02 ,  C11D3/08 ,  C11D3/06 ,  C11D3/28 ,  C11D3/43 ,  C11D1/00

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/02 ,  C11D3/042 ,  C11D3/046 ,  C11D3/06 ,  C11D3/08 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5004 ,  H01L21/02074 ,  H01L21/02101 ,  H01L21/31111 ,  H01L27/10844

Abstract: A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

Abstract translation: 一种去除组合物和从其上具有所述层的微电子器件去除含硅层的方法。 去除组合物选择性地去除包括但不限于氧化硅，等离子体增强的四乙基原硅酸盐（P-TEOS），硼磷硅酸盐玻璃（BPSG），等离子体增强氧化物（PEOX），高密度等离子体氧化物（HDP），磷硅酸盐玻璃 PSG），旋涂电极（SOD），热氧化物，上硅酸盐玻璃，牺牲氧化物，含硅有机聚合物，含硅杂化有机/无机材料，有机硅酸盐玻璃（OSG），TEOS，氟化硅酸盐玻璃 ），半球形颗粒（HSQ），碳掺杂氧化物（CDO）玻璃及其组合，相对于下电极，器件衬底和/或蚀刻停止层材料。

公开(公告)号：WO2008039730A1

公开(公告)日：2008-04-03

申请号：PCT/US2007/079347

申请日：2007-09-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela, M. ,  KORZENSKI, Michael, B.

Inventor： VISINTIN, Pamela, M. ,  KORZENSKI, Michael, B.

IPC: C11D7/32

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D3/044 ,  C11D3/2068 ,  C11D3/30 ,  G03F7/425

Abstract: Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

Abstract translation: 用于重新加工微电子器件晶片的组合物，即从被拒绝的晶片去除光致抗蚀剂，而不损坏下层和诸如盖层，层间电介质层，蚀刻停止层和金属互连材料的结构。 所述半水性组合物包括至少一种碱金属和/或碱土金属碱盐，至少一种有机溶剂，水，任选的至少一种季铵碱式盐，任选的至少一种金属腐蚀抑制剂和任选的至少一种水 - 可溶性聚合物表面活性剂。

公开(公告)号：WO2006113222A3

公开(公告)日：2006-10-26

申请号：PCT/US2006/013430

申请日：2006-04-10

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H.

Inventor： KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H.

IPC: C11D1/00 ,  C11D1/02 ,  C11D1/72 ,  C11D3/20 ,  C11D3/30 ,  C11D3/43 ,  C11D3/44

Abstract: A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.

公开(公告)号：WO2007111694A3

公开(公告)日：2007-10-04

申请号：PCT/US2006/060696

申请日：2006-11-09

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela, M. ,  JIANG, Ping ,  KORZENSKI, Michael, B. ,  KING, Mackenzie

Inventor： VISINTIN, Pamela, M. ,  JIANG, Ping ,  KORZENSKI, Michael, B. ,  KING, Mackenzie

IPC: H01L21/302 ,  H01L21/461

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

公开(公告)号：WO2007111694A2

公开(公告)日：2007-10-04

申请号：PCT/US2006060696

申请日：2006-11-09

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  KING MACKENZIE

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  KING MACKENZIE

IPC: C09K13/08

CPC classification number: C09K13/08 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/32134

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract translation: 一种用于从其上具有相同材料的被拒绝微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的移除组合物和工艺。 除去组合物包含氢氟酸。 该组合物实现至少部分从其上具有相同材料的微电子器件结构的表面去除材料，以用于所述结构的再循环和/或重新使用，而不损害半导体架构中采用的下层多晶硅或裸硅层 。