公开(公告)号：WO2008080097A2

公开(公告)日：2008-07-03

申请号：PCT/US2007/088644

申请日：2007-12-21

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela, M. ,  JIANG, Ping ,  KORZENSKI, Michael, B. ,  MINSEK, David, W. ,  COOPER, Emanuel, I. ,  HSU, Ming-Ann ,  FLETCHER, Kristin, A.

Inventor： VISINTIN, Pamela, M. ,  JIANG, Ping ,  KORZENSKI, Michael, B. ,  MINSEK, David, W. ,  COOPER, Emanuel, I. ,  HSU, Ming-Ann ,  FLETCHER, Kristin, A.

IPC: C11D11/00 ,  C11D3/02 ,  C11D3/24 ,  C11D1/62 ,  C11D7/08 ,  C11D7/28 ,  C11D3/00 ,  C11D3/43 ,  C11D7/50

CPC classification number: C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 此外，该组合物可用于从其上具有其的微电子器件去除氮化钛层。

公开(公告)号：WO2008121952A1

公开(公告)日：2008-10-09

申请号：PCT/US2008/058878

申请日：2008-03-31

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela M. ,  JIANG, Ping ,  KORZENSKI, Michael B. ,  KING, Mackenzie ,  FLETCHER, Kristin A. ,  MINSEK, David W.

Inventor： VISINTIN, Pamela M. ,  JIANG, Ping ,  KORZENSKI, Michael B. ,  KING, Mackenzie ,  FLETCHER, Kristin A. ,  MINSEK, David W.

IPC: G03F7/42 ,  H01L21/027 ,  C09K8/02

CPC classification number: H01L21/02079 ,  C11D1/004 ,  C11D1/29 ,  C11D3/042 ,  C11D3/046 ,  C11D3/3454 ,  C11D3/3947 ,  C11D11/0041 ,  C23F1/16 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134

Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

Abstract translation: 去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物包括氢氟酸。 组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。

公开(公告)号：WO2008052103A1

公开(公告)日：2008-05-02

申请号：PCT/US2007/082501

申请日：2007-10-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H.

Inventor： KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H.

IPC: C23G1/02 ,  C23G1/00

CPC classification number: G03F7/422 ,  B82Y10/00 ,  B82Y30/00 ,  G03F7/427 ,  H01L21/31133

Abstract: A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.

Abstract translation: 已经开发了用于从微电子器件去除体积和硬化的光致抗蚀剂材料的方法和自组装单层（SAM）组合物。 含SAM的组合物包括至少一种溶剂，至少一种催化剂，至少一种SAM组分和任选的表面活性剂。 含SAM的组合物有效地除去硬化的光致抗蚀剂材料，同时一步法将下面的含硅层钝化。

公开(公告)号：WO2007120259A3

公开(公告)日：2008-01-17

申请号：PCT/US2006060582

申请日：2006-11-07

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: B01D53/04

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  H01L21/02063

Abstract: A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract translation: 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。

公开(公告)号：WO2006113222A2

公开(公告)日：2006-10-26

申请号：PCT/US2006013430

申请日：2006-04-10

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  VISINTIN PAMELA M ,  BAUM THOMAS H

Inventor： KORZENSKI MICHAEL B ,  VISINTIN PAMELA M ,  BAUM THOMAS H

IPC: H01L21/228

CPC classification number: H01L21/31133 ,  B82Y30/00 ,  C11D3/162 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/22 ,  C11D7/3209 ,  C11D7/5004 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/425 ,  H01L21/266

Abstract: A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.

Abstract translation: 已经开发了用于从微电子器件去除体积和硬化的光致抗蚀剂材料的方法和自组装单层（SAM）组合物。 含SAM的组合物包括至少一种溶剂，至少一种催化剂，至少一种SAM组分和任选的表面活性剂。 含SAM的组合物有效地除去硬化的光致抗蚀剂材料，同时一步法将下面的含硅层钝化。

公开(公告)号：WO2008058173A3

公开(公告)日：2008-08-07

申请号：PCT/US2007083891

申请日：2007-11-07

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

IPC: C11D1/00 ,  C11D3/37

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/02 ,  C11D3/042 ,  C11D3/046 ,  C11D3/06 ,  C11D3/08 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5004 ,  H01L21/02074 ,  H01L21/02101 ,  H01L21/31111 ,  H01L27/10844

Abstract: A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

Abstract translation: 一种去除组合物和从其上具有所述层的微电子器件去除含硅层的方法。 （P-TEOS），硼磷硅酸盐玻璃（BPSG），等离子体增强氧化物（PEOX），高密度等离子体氧化物（HDP），磷硅酸盐玻璃（磷硅酸盐玻璃）等（但不限于此） PSG），旋转电介质（SOD），热氧化物，上覆硅酸盐玻璃，牺牲氧化物，含硅有机聚合物，含硅杂化有机/无机材料，有机硅酸盐玻璃（OSG），TEOS，氟化硅酸盐玻璃 ），半球形晶粒（HSQ），碳掺杂氧化物（CDO）玻璃及其组合，相对于下电极，器件衬底和/或蚀刻停止层材料。

公开(公告)号：WO2007120259A2

公开(公告)日：2007-10-25

申请号：PCT/US2006/060582

申请日：2006-11-07

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela M. ,  KORZENSKI, Michael B. ,  BAUM, Thomas H.

Inventor： VISINTIN, Pamela M. ,  KORZENSKI, Michael B. ,  BAUM, Thomas H.

IPC: C11D3/20

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  H01L21/02063

Abstract: A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract translation: 描述了从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣残留物的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。

公开(公告)号：WO2006113621A3

公开(公告)日：2007-03-01

申请号：PCT/US2006014407

申请日：2006-04-14

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: B08B3/00

CPC classification number: C11D3/042 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/368 ,  C11D3/43 ,  C11D7/08 ,  C11D7/261 ,  C11D7/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract translation: 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。

公开(公告)号：WO2006138505A1

公开(公告)日：2006-12-28

申请号：PCT/US2006/023388

申请日：2006-06-16

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H. ,  MINSEK, David W. ,  XU, Chongying

Inventor： KORZENSKI, Michael B. ,  VISINTIN, Pamela M. ,  BAUM, Thomas H. ,  MINSEK, David W. ,  XU, Chongying

IPC: B08B3/00

CPC classification number: C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/264 ,  C11D7/265 ,  C11D7/32 ,  C11D7/34 ,  C11D7/5004 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063

Abstract: A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.

Abstract translation: 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。

公开(公告)号：WO2006113621A2

公开(公告)日：2006-10-26

申请号：PCT/US2006/014407

申请日：2006-04-14

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  VISINTIN, Pamela M. ,  KORZENSKI, Michael B. ,  BAUM, Thomas H.

Inventor： VISINTIN, Pamela M. ,  KORZENSKI, Michael B. ,  BAUM, Thomas H.

IPC: C11D1/38

CPC classification number: C11D3/042 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/368 ,  C11D3/43 ,  C11D7/08 ,  C11D7/261 ,  C11D7/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract translation: 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。