公开(公告)号：WO1997046730A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009031

申请日：1997-06-02

Applicant: LAM RESEARCH CORPORATION ,  WICKER, Thomas, E. ,  COOK, Joel, M. ,  MARASCHIN, Robert, A. ,  KENNEDY, William, S. ,  BENJAMIN, Neil

Inventor： LAM RESEARCH CORPORATION

IPC: C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32522

Abstract: A plasma processing chamber (10) includes a substrate holder (12) and a dielectric member such as a dielectric window (20) or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna (18) which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel (24) through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential bath processing of substrates such as during oxide etching of semiconductor wafers.

Abstract translation: 等离子体处理室（10）包括衬底保持器（12）和电介质构件，例如电介质窗（20）或具有面向衬底保持器的内表面的气体分配板，内表面保持在阈值温度以下以最小化 处理衬底时的工艺漂移。 腔室可以包括天线（18），其通过电介质构件感应耦合RF能量，以将处理气体激励成等离子体状态。 天线可以包括通道（24），已经通过闭路温度控制器冷却的温度控制流体通过该通道。 内部表面的温度的控制使得在衬底的顺序浴处理期间（例如在半导体晶片的氧化物蚀刻期间）处理衬底的工艺漂移和质量降低最小化。