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公开(公告)号：CN102190975A
公开(公告)日：2011-09-21
申请号：CN201110051582.2
申请日：2011-03-01
Applicant: 日东电工株式会社
CPC classification number: H01L24/27 , C09J7/10 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/6836 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83191 , H01L2224/85206 , H01L2224/85207 , H01L2224/92247 , H01L2225/0651 , H01L2225/06568 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3025 , Y10T428/24959 , Y10T428/28 , Y10T428/2848 , Y10T428/287 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/0532 , H01L2924/05432 , H01L2924/05032 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 本发明提供用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件的芯片接合薄膜，其可以防止所述焊线的变形或断裂，可以搭载另一个半导体元件，由此可以提高半导体装置的制造成品率，本发明还提供切割/芯片接合薄膜。本发明芯片接合薄膜，用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件，其中，至少由第一胶粘剂层和第二胶粘剂层层叠而形成，所述第一胶粘剂层在压接时可以将所述焊线的一部分埋没而使其通过所述第一胶粘剂层的内部，所述第二胶粘剂层用于防止所述另一个半导体元件与焊线接触。
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公开(公告)号：CN102010677A
公开(公告)日：2011-04-13
申请号：CN201010275922.5
申请日：2010-09-07
Applicant: 日东电工株式会社
IPC: C09J7/02 , C09J161/06 , C09J163/00 , C09J133/00 , H01L21/68 , H01L21/78
CPC classification number: H01L21/6836 , C09J7/22 , C09J7/38 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L24/45 , H01L24/73 , H01L2221/68336 , H01L2221/68381 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/85207 , H01L2924/01012 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/00014
Abstract: 本发明提供芯片接合薄膜适合通过拉伸张力而断裂的热固型芯片接合薄膜。一种热固型芯片接合薄膜，用于将半导体芯片固着到被粘物上，至少具有胶粘剂层，其中，在热固化前室温下单位面积的断裂能为1J/mm2以下，并且断裂伸长率为40％以上且500％以下。
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公开(公告)号：CN102190975B
公开(公告)日：2014-12-10
申请号：CN201110051582.2
申请日：2011-03-01
Applicant: 日东电工株式会社
CPC classification number: H01L24/27 , C09J7/10 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/6836 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83191 , H01L2224/85206 , H01L2224/85207 , H01L2224/92247 , H01L2225/0651 , H01L2225/06568 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3025 , Y10T428/24959 , Y10T428/28 , Y10T428/2848 , Y10T428/287 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/0532 , H01L2924/05432 , H01L2924/05032 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 本发明提供用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件的芯片接合薄膜，其可以防止所述焊线的变形或断裂，可以搭载另一个半导体元件，由此可以提高半导体装置的制造成品率，本发明还提供切割/芯片接合薄膜。本发明芯片接合薄膜，用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件，其中，至少由第一胶粘剂层和第二胶粘剂层层叠而形成，所述第一胶粘剂层在压接时可以将所述焊线的一部分埋没而使其通过所述第一胶粘剂层的内部，所述第二胶粘剂层用于防止所述另一个半导体元件与焊线接触。
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公开(公告)号：CN102569263A
公开(公告)日：2012-07-11
申请号：CN201110370054.3
申请日：2011-11-18
Applicant: 日东电工株式会社
IPC: H01L23/552
CPC classification number: H01L25/0657 , C09J7/28 , C09J2203/326 , H01L21/6836 , H01L23/552 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2224/16225 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83862 , H01L2224/92247 , H01L2225/0651 , H01L2225/06537 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01055 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/01063 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/15747 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , Y10T428/28 , H01L2924/00014 , H01L2924/00 , H01L2924/01014 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 本发明涉及半导体装置用胶粘薄膜以及半导体装置。本发明的课题在于减少从一个半导体芯片释放的电磁波对同一封装内的另一个半导体芯片、安装的衬底、相邻的器件、封装等产生的影响。一种半导体装置用胶粘薄膜，具有胶粘剂层和电磁波屏蔽层，其特征在于，透过所述半导体装置用胶粘薄膜的电磁波的衰减量，对于50MHz～20GHz范围的频域的至少一部分而言，为3dB以上。
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Patent Agency Ranking
公开(公告)号：CN102559085A
公开(公告)日：2012-07-11
申请号：CN201110367402.1
申请日：2011-11-18
Applicant: 日东电工株式会社
IPC: C09J7/02 , H01L23/552 , H01L23/29 , H01L21/56
CPC classification number: H01L23/552 , H01L21/563 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/68377 , H01L2221/68386 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16245 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/831 , H01L2224/83862 , H01L2924/01019 , H01L2924/01037 , H01L2924/01055 , H01L2924/01079 , Y10T428/28 , H01L2924/00
Abstract: 本发明涉及倒装芯片型半导体背面用薄膜、切割带一体型半导体背面用薄膜、倒装芯片型半导体背面用薄膜的制造方法以及半导体装置。本发明的课题在于可以在倒装芯片式连接到被粘物上的半导体元件的背面设置电磁波屏蔽层，并且可以在不降低生产率的情况下制造具有该电磁波屏蔽层的半导体装置。一种倒装芯片型半导体背面用薄膜，用于在倒装芯片式连接到被粘物上的半导体元件的背面上形成，其具有胶粘剂层和电磁波屏蔽层。
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公开(公告)号：CN102222633A
公开(公告)日：2011-10-19
申请号：CN201110096944.X
申请日：2011-04-15
Applicant: 日东电工株式会社
CPC classification number: H01L24/83 , B23K26/364 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2221/68336 , H01L2221/68359 , H01L2224/27436 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/85207 , H01L2224/92247 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01072 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3025 , Y10T428/28 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/0532 , H01L2924/05432 , H01L2924/05032 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 本发明提供通过拉伸张力芯片接合薄膜恰当地断裂的热固型芯片接合薄膜。一种热固型芯片接合薄膜，用于以下方法：对半导体晶片照射激光形成改性区域后，通过用改性区域将半导体晶片断裂而由半导体晶片得到半导体元件的方法；或者在半导体晶片的表面形成未到达背面的沟后，进行半导体晶片的背面磨削，通过从背面露出沟而由半导体晶片得到半导体元件的方法，所述热固型芯片接合薄膜的特征在于，热固化前25℃下的断裂伸长率大于40％且不超过500％。本发明还提供切割/芯片接合薄膜及半导体装置的制造方法。
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公开(公告)号：CN102153956B
公开(公告)日：2016-06-01
申请号：CN201010566636.4
申请日：2010-11-26
Applicant: 日东电工株式会社
IPC: C09J7/00 , C09J133/00 , C09J163/00 , C09J7/02 , H01L23/48 , H01L23/488
CPC classification number: C08G59/621 , C08L33/00 , C08L33/08 , C08L61/04 , C08L63/00 , C08L63/08 , C08L71/00 , C08L2205/03 , C08L2666/02 , C09J7/10 , C09J133/08 , C09J161/06 , C09J163/00 , C09J2201/61 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/561 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/29023 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83097 , H01L2224/83191 , H01L2224/83855 , H01L2224/85097 , H01L2224/85205 , H01L2224/9205 , H01L2224/92165 , H01L2224/92247 , H01L2224/94 , H01L2924/00013 , H01L2924/00014 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T156/10 , Y10T428/24355 , Y10T428/265 , H01L2224/27 , H01L2924/00 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/3512 , H01L2924/00012 , H01L2224/85399
Abstract: 本发明提供设定为实质上不含有填充材料的构成并且可以防止因芯片接合时的压力导致半导体芯片的破损，并且在可以防止拉伸弹性模量的下降的同时可以防止热固化时因热收缩产生翘曲，可以提高封装可靠性的热固型胶粘薄膜。一种热固型胶粘薄膜，在制造半导体装置时使用，其中，热固化后的260℃下的拉伸储能弹性模量为2×105Pa～5×107Pa，填充材料的含量相对于热固型胶粘薄膜全体为0.1重量％以下，厚度为1μm～10μm。
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公开(公告)号：CN102559085B
公开(公告)日：2016-03-16
申请号：CN201110367402.1
申请日：2011-11-18
Applicant: 日东电工株式会社
IPC: C09J7/02 , H01L23/552 , H01L23/29 , H01L21/56
CPC classification number: H01L23/552 , H01L21/563 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/68377 , H01L2221/68386 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16245 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/831 , H01L2224/83862 , H01L2924/01019 , H01L2924/01037 , H01L2924/01055 , H01L2924/01079 , Y10T428/28 , H01L2924/00
Abstract: 本发明涉及倒装芯片型半导体背面用薄膜、切割带一体型半导体背面用薄膜、倒装芯片型半导体背面用薄膜的制造方法以及半导体装置。本发明的课题在于可以在倒装芯片式连接到被粘物上的半导体元件的背面设置电磁波屏蔽层，并且可以在不降低生产率的情况下制造具有该电磁波屏蔽层的半导体装置。一种倒装芯片型半导体背面用薄膜，用于在倒装芯片式连接到被粘物上的半导体元件的背面上形成，其具有胶粘剂层和电磁波屏蔽层。
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公开(公告)号：CN102934211B
公开(公告)日：2016-01-20
申请号：CN201180026558.1
申请日：2011-06-03
Applicant: 日东电工株式会社
IPC: H01L21/52
CPC classification number: H01L23/295 , H01L21/6836 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L25/50 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29298 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3025 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明提供在通过热固型芯片接合薄膜将半导体芯片接合到被粘物上时，可以防止通过填充材料对该半导体芯片施加局部的应力并由此减少半导体芯片的破损的热固型芯片接合薄膜以及具备该热固型芯片接合薄膜的切割/芯片接合薄膜。本发明的热固型芯片接合薄膜，含有胶粘剂组合物以及包含微粒的填充材料，其中，设所述热固型芯片接合薄膜的厚度为Y（μm）、设所述填充材料的最大粒径为X（μm）时，比率X/Y（-）为1以下。
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