公开(公告)号：KR1020180087595A

公开(公告)日：2018-08-02

申请号：KR1020170011764

申请日：2017-01-25

Applicant: 강원대학교산학협력단

Inventor： 윤종환

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/285 ,  H01L21/28

CPC classification number: H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/324

Abstract: 본발명은다결정실리콘박막을형성하기위한촉매로작용하는금속을기판상에증착하는금속층증착단계; 상기금속층증착단계에서증착된금속층상에산화실리콘층을증착하는산화실리콘층증착단계; 및상기금속층증착단계및 상기산화실리콘층증착단계를통해상기금속층및 산화실리콘층이증착된기판상에다결정실리콘박막층이형성되도록열처리하는어닐링단계;를포함하는다결정실리콘박막형성방법을제공한다.

公开(公告)号：KR101317406B1

公开(公告)日：2013-10-15

申请号：KR1020120106017

申请日：2012-09-24

Applicant: 강원대학교산학협력단

Inventor： 윤종환

IPC: B82B3/00 ,  C01B33/027

Abstract: PURPOSE: A production method of a silica nanowire is provided to grow the silica nanowire using various substrates by heat-processing a zinc thin film at low temperatures using a plasma-enhanced chemical vapor deposition (PECVD) method. CONSTITUTION: A production method of a silica nanowire comprises the following steps: producing chemical steam of silicon and oxygen using a PECVD method; and heat processing a zinc thin film (2) coated on a substrate (1) at 200-420°C under the presence of the chemical steam. The PECVD method is conducted under the presence of mixed gas containing SiH4 gas and N2O gas. The flowing speed of the SiH4 gas is 100-300 sccm, and the flowing speed of the N2O gas is 10-500 sccm. The mixed gas contains the SiH4 gas and the N2O gas in a volume ratio of 1:0.03-2.5.

Abstract translation: 目的：提供二氧化硅纳米线的制造方法，通过使用等离子体增强化学气相沉积（PECVD）法在低温下热处理锌薄膜，使用各种基板生长二氧化硅纳米线。 构成：二氧化硅纳米线的制造方法包括以下步骤：使用PECVD法生产硅和氧的化学蒸汽; 并在200-420℃下在化学蒸汽的存在下加热涂覆在基材（1）上的锌薄膜（2）。 PECVD法在含有SiH4气体和N2O气体的混合气体存在下进行。 SiH4气体的流动速度为100-300sccm，N2O气体的流动速度为10-500sccm。 混合气体含有体积比为1：0.03〜2.5的SiH 4气体和N 2 O气体。