카드뮴셀레나이드/황화아연 양자점 제조 방법 및 이를이용하여 형성한 혈당 센서
    11.
    发明公开
    카드뮴셀레나이드/황화아연 양자점 제조 방법 및 이를이용하여 형성한 혈당 센서 失效
    使用该方法制造CDSE / ZNS量子点和葡萄糖传感器

    公开(公告)号:KR1020090093640A

    公开(公告)日:2009-09-02

    申请号:KR1020080019278

    申请日:2008-02-29

    CPC classification number: C12Q1/26 C09K11/54 C12Q1/54 C12Y101/03004 G01N33/66

    Abstract: A method for manufacturing of zinc oxide cadmium/zinc oxidase quantum is provided to easily bind with a bio material and improve the detection sensitivity of glucose concentration. A method for manufacturing cadmium selenide/zinc sulfide quantum dot comprises: a step of ionizing a cadmium to prepare a first solution; a step of ionizing selenium to make a second solution; a step of adding the second solution to make a third solution having cadmium selenide quantum dot; a step of ionizing zinc and sulfur to make a fourth solution; a step of adding the fourth solution in the third solution to prepare a fifth solution; a step of preparing sixth and seventh solution; and a step of adding n-hydroxysulfo-succinimide, 1-Ethyl-3-(3-dimethylaminopropyl) carbodiimide and glucose oxidase to fix the glucose oxidase in the cadmium selenide/zinc sulfide quantum dot.

    Abstract translation: 提供氧化锌镉/锌氧化酶量子的制造方法,容易与生物材料结合,提高葡萄糖浓度的检测灵敏度。 硒化镉/硫化锌量子点的制造方法包括:使镉离子化以制备第一溶液的步骤; 电离硒的步骤制成第二溶液; 添加第二溶液以制备具有硒化镉量子点的第三溶液的步骤; 电离锌和硫以制成第四溶液的步骤; 将第四溶液添加到第三溶液中以制备第五溶液的步骤; 制定第六和第七种解决方案的步骤; 以及添加正羟基磺基琥珀酰亚胺,1-乙基-3-(3-二甲基氨基丙基)碳二亚胺和葡萄糖氧化酶以将葡萄糖氧化酶固定在硒化镉/硫化锌量子点中的步骤。

    산화아연 나노와이어 제조 방법 및 이를 이용하여 형성한혈당 센서
    12.
    发明公开
    산화아연 나노와이어 제조 방법 및 이를 이용하여 형성한혈당 센서 无效
    使用该方法制备ZNO纳米线和葡萄糖传感器的方法

    公开(公告)号:KR1020090093639A

    公开(公告)日:2009-09-02

    申请号:KR1020080019277

    申请日:2008-02-29

    Abstract: A method for manufacturing zinc oxide nanowire and a blood sugar measuring sensor using the same are provided to allow a glucose oxidant to be easily coupled with the zinc oxide nanowire. A method for manufacturing zinc oxide nanowire comprises the following steps of: forming zinc oxide nanowire(200) on the top of a silicone substrate; dipping the silicone substrate containing the zinc oxide nanowire in a buffer solution; and putting a glucose oxidant(220) into the buffer solution such that the glucose oxidant is coupled with the surface of the zinc oxide nanowire. The zinc oxide nanowire is 80-100nm in length. The buffer solution represents phosphate buffered saline with pH of 6.6-7.4.

    Abstract translation: 提供一种制造氧化锌纳米线的方法和使用该方法的血糖测量传感器,以使葡萄糖氧化剂容易与氧化锌纳米线结合。 一种制造氧化锌纳米线的方法包括以下步骤:在硅树脂基材的顶部上形成氧化锌纳米线(200); 将含有氧化锌纳米线的硅树脂浸渍在缓冲溶液中; 并将葡萄糖氧化剂(220)放入缓冲溶液中,使得葡萄糖氧化剂与氧化锌纳米线的表面结合。 氧化锌纳米线的长度为80-100nm。 缓冲溶液代表pH为6.6-7.4的磷酸盐缓冲盐水。

    마그네슘이 도핑된 카드뮴셀레나이드 양자점의 제조방법
    13.
    发明公开
    마그네슘이 도핑된 카드뮴셀레나이드 양자점의 제조방법 无效
    用于制备用MG去除CDSE量子的方法

    公开(公告)号:KR1020090010412A

    公开(公告)日:2009-01-30

    申请号:KR1020070073493

    申请日:2007-07-23

    Abstract: A manufacturing method of a cadmium selenide quantum dot doped with magnesium is provided to control the energy band-gap of the cadmium selenide and improve luminous efficiency. A manufacturing method of a cadmium selenide quantum dot doped with magnesium comprises: a step(S110) forming a first solution by dissolving cadmium source and magnesium source in solvent paraffinic oil and oleic acid and forming a second solution by dissolving a selenium(Se) metal in the solvent paraffinic oil; a step(S120) creating the cadmium selenide quantum dot doped with magnesium by adding the first solution in the second solution or the second solution in the first solution; a step(S130) growing the cadmium selenide quantum dot doped with magnesium in order to have predetermined light emission region wavelength and band-gap; and a step(S140) washing the grown cadmium selenide quantum dot doped with magnesium.

    Abstract translation: 提供掺杂有镁的硒化镉量子点的制造方法,以控制硒化镉的能带隙并提高发光效率。 掺杂镁的硒化镉量子点的制造方法包括:步骤(S110),通过将镉源和镁源溶解在溶剂石蜡油和油酸中形成第一溶液,并通过溶解硒(Se)金属形成第二溶液 在溶剂石蜡油中; 步骤(S120),通过将第一溶液或第一溶液中的第二溶液添加第一溶液来产生掺杂有镁的硒化镉量子点; 生长掺杂有镁的硒化镉量子点的步骤(S130),以便具有预定的发光区域波长和带隙; 和洗涤生长的掺杂有镁的硒化镉量子点的步骤(S140)。

    티타니아 나노와이어 형성방법
    14.
    发明授权
    티타니아 나노와이어 형성방법 失效
    使用Ti衬底生长TiO2纳米线的方法

    公开(公告)号:KR100864230B1

    公开(公告)日:2008-10-17

    申请号:KR1020070040977

    申请日:2007-04-26

    Abstract: 본 발명은 상기 기술적 과제를 달성하기 위한 티타니아 나노와이어의 형성방법은 티타늄 완충층 상에 금촉매층이 형성된 티타늄기판을 마련하는 단계; 상기 티타늄기판을 증착장치의 반응영역으로 이동시키는 단계; 상기 반응영역을 유지온도 600℃ 내지 800℃ 분위기로 2분 내지 15분간 유지시간을 갖는 단계; 및 상기 반응영역으로 반응가스 및 티타늄소스를 제공하여 상기 티타늄기판 상에 티타니아 나노와이어를 형성시키는 단계;를 포함한다.
    본 발명의 상기 티타늄기판 위에서 성장한 티타니아 나노와이어는 직경이 작고 밀도가 향상되었고, 또한 결정성도 더 좋으며 동일면적에 대하여 성장밀도가 높아 광촉매 특성이 향상되는 효과가 있다.
    티타늄, 나노와이어, 고밀도, 성장, 티타늄기판, TiCl4

    티타니아 나노와이어의 제조방법 및 이에 의해 제조된 티타니아 나노와이어
    15.
    发明公开
    티타니아 나노와이어의 제조방법 및 이에 의해 제조된 티타니아 나노와이어 失效
    制备钛白粉及其制备的钛白粉的方法

    公开(公告)号:KR1020080033621A

    公开(公告)日:2008-04-17

    申请号:KR1020060099325

    申请日:2006-10-12

    Abstract: A method for preparing titania nanowire is provided to realize the yield increase and rapid growth rate of titania nanowire while reducing a production cost, and produce titania nanowire having improved crystallographic structure and optical characteristics. A method for preparing titania nanowire includes the steps of: depositing a titanium buffer layer(112) and a metal catalyst layer(113) on the surface of a substrate(111) in order of precedence; putting a titanium powder into an alumina boat, disposing the surface of the substrate on the upper part of an alumina boat(114), and inserting the substrate-disposed alumina boat into a tube(130); inserting the tube into a furnace(120) of a chemical vapor deposition device(100); injecting an inert gas while heating the inside of the furnace; stopping heating of the furnace inside, and injecting an oxygen gas into the furnace; and stopping an inflow of the oxygen gas, and cooling the inside of the furnace. Further, the substrate is a sapphire substrate or a silica substrate.

    Abstract translation: 提供制备二氧化钛纳米线的方法,以降低生产成本,实现二氧化钛纳米线的产率增加和生长速度快,并且制备具有改善晶体结构和光学特性的二氧化钛纳米线。 制备二氧化钛纳米线的方法包括以下步骤:按照优先顺序在衬底(111)的表面上沉积钛缓冲层(112)和金属催化剂层(113) 将钛粉末放入氧化铝舟皿中,将所述基材的表面设置在氧化铝舟皿(114)的上部,并将所述基板设置的氧化铝舟皿插入管(130)中; 将管插入化学气相沉积装置(100)的炉(120)中; 在加热炉内时注入惰性气体; 停止炉内加热,向炉内注入氧气; 并停止氧气的流入,并冷却炉内。 此外,衬底是蓝宝石衬底或二氧化硅衬底。

    티타니아/카드뮴설파이드 이종구조를 갖는 태양전지용 기판제조 방법, 이를 이용한 태양전지 제조 방법 및 그 방법으로 제조된 태양전지
    16.
    发明公开
    티타니아/카드뮴설파이드 이종구조를 갖는 태양전지용 기판제조 방법, 이를 이용한 태양전지 제조 방법 및 그 방법으로 제조된 태양전지 失效
    制造用于太阳能电池的硫化镉纳米粒子的钛锡纳米管的制造方法,使用基板和太阳能电池制造太阳能电池的方法制造方法

    公开(公告)号:KR1020100078673A

    公开(公告)日:2010-07-08

    申请号:KR1020080136996

    申请日:2008-12-30

    Inventor: 성윤모 이정철

    CPC classification number: Y02E10/50 Y02P70/521 H01L31/04 B82Y40/00 H01L31/18

    Abstract: PURPOSE: A substrate manufacturing method for a solar cell with titania/cadmium sulfide dual structure, a solar cell manufacturing method for using the same and the solar cell manufactured with the method thereof are provided to reduce the production cost by forming titania nanowire and cadmium sulfide nano-rod on the low temperature environment. CONSTITUTION: Titania nanowire(TiO2 nano-wire) is formed on Tin oxide glass substrates which doped with fluorine through a chemical vapor deposition(S210). The cadmium sulfide nano-rod is formed on the titania nanowire surface through the chemical vapor deposition(S220), wherein is performed under 550~500°C. tiCl4 is provided to the source of titania in the step.

    Abstract translation: 目的:提供一种具有二氧化钛/硫化镉双重结构的太阳能电池的基板制造方法,使用该太阳能电池的太阳能电池的制造方法以及利用其制造的太阳能电池,通过形成二氧化钛纳米线和硫化镉来降低制造成本 纳米棒在低温环境下。 构成:在通过化学气相沉积掺杂氟的氧化锡玻璃基板上形成二氧化钛纳米线(TiO 2纳米线)(S210)。 通过化学气相沉积(S220)在二氧化钛纳米线表面上形成硫化镉纳米棒,其中在550〜500℃下进行。 在步骤中将tiCl4提供给二氧化钛源。

    티타니아/카드뮴 셀레나이드 나노구조물 형성방법
    17.
    发明公开
    티타니아/카드뮴 셀레나이드 나노구조물 형성방법 失效
    TIO2纳米结构及其纳米结构及其制备方法

    公开(公告)号:KR1020090009489A

    公开(公告)日:2009-01-23

    申请号:KR1020070072801

    申请日:2007-07-20

    Abstract: A titania/selenide nanostructures forming method is provided to improve optical and optical catalyst properties by adhering cadmium selenide nanopowders to a titania nanowire and increasing a surface area. A titania/selenide nanostructures forming method comprises steps of: forming a first substrate in which a titania nanowire layer is formed on a substrate; preparing a cadmium selenide mixture solution having cadmium selenide nanopowders; coating the cadmium selenide mixture on a titania nanowire layer of a first substrate and forming a second substrate; and heat-treating the second substrate. The substrate is a sapphire substrate or a titanium substrate.

    Abstract translation: 提供二氧化钛/硒化物纳米结构形成方法,通过将硒化镉纳米粉末粘附到二氧化钛纳米线并增加表面积来改善光学和光学催化剂性能。 二氧化钛/硒化物纳米结构形成方法包括以下步骤:形成在基板上形成二氧化钛纳米线层的第一基板; 制备硒化镉纳米粉体硒化镉溶液; 将所述硒化镉混合物涂覆在第一衬底的二氧化钛纳米线层上并形成第二衬底; 并对第二基板进行热处理。 衬底是蓝宝石衬底或钛衬底。

    망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법
    18.
    发明授权
    망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법 失效
    망간이도핑된카드뮴셀레나이드양자점의제조방망

    公开(公告)号:KR100876258B1

    公开(公告)日:2008-12-26

    申请号:KR1020070007701

    申请日:2007-01-25

    Abstract: A fabrication method of cadmium selenide quantum dots is provided to obtain cadmium selenide doped with manganese suitable for spintronics by inducing diluted magnetic property by making the structure of the cadmium selenide into face centered cubic zinc blended structure. A fabrication method of cadmium selenide quantum dots comprises steps of: (a) preparing a primary solution by dissolving cadmium source and manganese source in paraffin oil solvent with oleic acid surfactant and preparing a secondary solution by dissolving selenium metal in paraffin oil(S110); (b) forming cadmium selenide quantum dots doped with manganese by adding the primary solution to the secondary solution and vice versa(S120); (c) growing the cadmium selenide quantum dots doped with manganese in order to have a certain wavelength of emission region and a band gap(S130); and (d) washing the grown cadmium selenide quantum dots doped with manganese. The volume ratio of the paraffin oil and the oleic acid for the primary solution is 1:10-100:1. The molar ratio of cadmium ion to manganese ion in the primary solution is 100:4 to 100:40. The molar concentration of manganese ion in the primary solution is 10-30mM, and the molar concentration of selenium ion in the secondary solution is 20-60mM. For the preparation of the primary solution, the temperature of 160-180deg.C is maintained until the organic solvents other than paraffin oil and the oleic acid in the solution are sufficiently released. For the preparation of the secondary solution, the temperature is set to 200-240deg.C. Further, the cadmium source is one of CdO and Cd acetate, and the manganese source is Mn acetate.

    Abstract translation: 本发明提供一种硒化镉量子点的制备方法,通过将硒化镉的结构制成面心立方锌掺杂结构,诱导稀磁性,从而获得掺杂锰的硒化镉,适用于自旋电子学。 一种硒化镉量子点的制备方法,包括以下步骤:(a)通过将镉源和锰源与油酸表面活性剂溶解在石蜡油溶剂中并通过将金属硒溶解在石蜡油中制备第二溶液来制备初级溶液(S110); (b)通过向第二溶液中加入初级溶液形成掺杂有锰的硒化镉量子点,反之亦然(S120); (c)生长掺杂有锰的硒化镉量子点,以便具有特定波长的发射区域和带隙(S130); 和(d)洗涤掺杂有锰的生长的硒化镉量子点。 石蜡油和油酸对于初级溶液的体积比为1:10-100:1。 初级溶液中镉离子与锰离子的摩尔比为100:4至100:40。 初级溶液中锰离子的摩尔浓度为10-30mM,第二级溶液中硒离子的摩尔浓度为20-60mM。 为了制备初级溶液,维持160-180℃的温度,直到溶液中除石蜡油和油酸之外的有机溶剂被充分释放。 为了制备二次溶液,温度设定为200-240℃。 此外,镉源是CdO和Cd醋酸盐中的一种,锰源是醋酸锰。

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