公开(公告)号：KR102204415B1

公开(公告)日：2021-01-18

申请号：KR1020190092679

申请日：2019-07-30

Applicant: 국방과학연구소

Inventor： 신동조 ,  주증민 ,  류정호

IPC: G09B9/00

Abstract: 본발명은항공전자전시뮬레이션장치및 그것의제어방법에관한것이다. 상기항공전자전시뮬레이션장치는복수의전자전위협모델들중 적어도하나를이용하여가상의전자파를생성하는전자파생성부, 기설정된운항시나리오에따라항공기의운항을모의하고, 상기운항시나리오에근거하여상기전자파와상기항공기를조우시키는전자전조우모의부및 상기항공기에배치된복수의안테나들에근거하여상기전자파를이용한방향탐지를수행하고, 방향탐지결과정보를출력하는방향탐지모의부를포함한다.

公开(公告)号：KR101273456B1

公开(公告)日：2013-06-11

申请号：KR1020120145258

申请日：2012-12-13

Applicant: 국방과학연구소

Inventor： 류정호 ,  심성균 ,  이규송 ,  신욱현

IPC: H04L27/20

CPC classification number: H04L27/20

Abstract: PURPOSE: A four-phase modulation generating device on pulses is provided to generate a four phase modulation signal by being synchronized with an output pulse signal according to a minimum delay time. CONSTITUTION: A four-phase modulation generating device(100) includes a four-phase shifter(110), a phase signal selector(120), a pulse signal generator(130), and a controller(140). The four-phase shifter generates signals which are shifted at multiple designated angles based on an input signal. The phase signal selector selects one of the phase-shifted signals. The pulse signal generator converts and generates the selected phase-shifted signal into a pulse type signal. The controller provides a synchronizing signal in order to select the phase-shifted signal and provides a pulse trigger signal for generating a conversion to the pulse signal generator. [Reference numerals] (110) Four-phase shifter; (120) Phase signal selector; (130) Pulse signal generator; (140) Controller; (AA) Frequency generator; (BB) Final output

Abstract translation: 目的：提供脉冲四相调制生成装置，通过根据最小延迟时间与输出脉冲信号同步来产生四相调制信号。 构成：四相调制发生装置（100）包括四相移位器（110），相位信号选择器（120），脉冲信号发生器（130）和控制器（140）。 四相移相器产生基于输入信号以多个指定角度移位的信号。 相位信号选择器选择一个相移信号。 脉冲信号发生器将所选择的相移信号转换并产生成脉冲型信号。 控制器提供同步信号以选择相移信号，并提供用于产生到脉冲信号发生器的转换的脉冲触发信号。 （附图标记）（110）四相移位器; （120）相位信号选择器; （130）脉冲信号发生器; （140）控制器; （AA）频率发生器; （BB）最终输出

公开(公告)号：KR101164902B1

公开(公告)日：2012-07-19

申请号：KR1020110129269

申请日：2011-12-05

Applicant: 국방과학연구소

Inventor： 이치호 ,  류정호 ,  조성진 ,  이광일

IPC: G01R23/02 ,  H04B17/00

Abstract: PURPOSE: A frequency leap signal receiving and analyzing apparatus and method are provided to detect a target frequency leap signal having number of hops per second and to grasp time information of the detected target frequency leap signal. CONSTITUTION: A frequency leap signal receiving and analyzing apparatus(100) is composed of a high frequency signal distributor(101), a receiver(102) and a frequency leap signal analyzer(103). The high frequency signal distributor distributes a signal received from a receiving antenna. The receiver parallely distributes a total receiving bandwidth and receives it. The frequency leap signal analyzer analyzes the property of a frequency leap signal under the situation in which a plurality of fixed frequency signals are mixed with the frequency leap signal and detects a target frequency leap signal at a time-frequency axis. The frequency leap signal analyzer analyzes time information of the target frequency leap signal.

Abstract translation: 目的：提供一种频率跳跃信号接收和分析装置和方法，以检测具有每秒跳数的目标频率跳跃信号并且掌握检测到的目标频率跳跃信号的时间信息。 构成：频率信号接收和分析装置（100）由高频信号分配器（101），接收机（102）和频率跳变信号分析器（103）组成。 高频信号分配器分配从接收天线接收的信号。 接收机并发分配总接收带宽并接收它。 在多个固定频率信号与频率跳变信号混合的情况下，频率跳跃信号分析仪分析频率跳跃信号的性质，并且检测时间轴上的目标频率跳跃信号。 频率跳跃信号分析仪分析目标频率跳跃信号的时间信息。

公开(公告)号：KR100859149B1

公开(公告)日：2008-09-19

申请号：KR1020070047245

申请日：2007-05-15

Applicant: 국방과학연구소

Inventor： 박범준 ,  이규송 ,  이병남 ,  류정호

IPC: H03H7/00

CPC classification number: H01P1/212 ,  H01P1/203 ,  H01P7/08 ,  H03H5/00

Abstract: A filter having a heat radiating unit and a transmitter having the same are provided to attach and detach the filter to and from a structure such as a heat sink without a separate fixing member. A filter(100) includes a heat sink, a casing, and a filter unit. The casing is coupled with the heat sink and has input/output terminals(113) at both ends. The filter unit is mounted inside the casing, connected to the input/output terminals, and has alternately arranged first and second elements(120,130). A surface of the casing, which is in contact with the heat sink, is flat to conduct heat generated by the filter unit. A region of the filter unit, which is in contact with a bottom of a receiving unit of the casing, is flat to conduct the heat. The second element is composed of an inductor. The inductor is coupled with a heat conductive member and connected to a region inside the case to conduct the heat.

Abstract translation: 具有散热单元和具有该散热单元的变送器的过滤器被设置用于将过滤器与诸如散热器的结构相连接和分离，而无需单独的固定构件。 过滤器（100）包括散热器，壳体和过滤器单元。 壳体与散热器耦合，并且在两端具有输入/输出端子（113）。 过滤器单元安装在壳体内部，连接到输入/输出端子，并且交替布置第一和第二元件（120,130）。 与散热器接触的壳体的表面是平坦的，以传导由过滤器单元产生的热量。 与壳体的接收单元的底部接触的过滤器单元的区域是平坦的，以传导热量。 第二个元件由电感器组成。 电感器与导热构件连接并连接到壳体内的区域以传导热量。

公开(公告)号：KR1020040064959A

公开(公告)日：2004-07-21

申请号：KR1020030001954

申请日：2003-01-13

Applicant: 국방과학연구소

Inventor： 이승근 ,  류정호 ,  김현수

IPC: H01L23/36

CPC classification number: H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A coupling structure of a high-voltage FET for electronic device and a cooling plate is provided to combine the high-voltage FET with a cooling plate by using a bolt and a nut. CONSTITUTION: A PCB(30) is installed in an inside of a main body. A cooling plate(10) is installed in the inside of the main body. A first through-hole(11) is formed on the cooling plate. A second through-hole(53) is formed at a center of a high-voltage FET(50). A connection pin(51) is formed at one side of the high-voltage FET. The high-voltage FET is coupled to the cooling plate by using a bolt and a nut. An insulating tube(67) is inserted between inner circumferences of the first and the second through-holes and an outer circumference of the bolt. An insulator(65) is formed between the high-voltage FET and the cooling plate. A silicon layer(70) is formed around the high-voltage FET.

Abstract translation: 目的：提供用于电子设备的高电压FET和冷却板的耦合结构，通过使用螺栓和螺母将高压FET与冷却板组合。 构成：PCB（30）安装在主体的内部。 冷却板（10）安装在主体的内部。 第一通孔（11）形成在冷却板上。 第二通孔（53）形成在高电压FET（50）的中心。 在高电压FET的一侧形成连接引脚（51）。 高压FET通过使用螺栓和螺母联接到冷却板。 绝缘管（67）插入在第一和第二通孔的内圆周和螺栓的外周之间。 在高电压FET和冷却板之间形成绝缘体（65）。 在高电压FET周围形成硅层（70）。