公开(公告)号：KR100413890B1

公开(公告)日：2004-03-19

申请号：KR1019960005460

申请日：1996-03-02

Applicant: 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 ,  도쿄엘렉트론가부시키가이샤

Inventor： 곤도에이이치 ,  다케야스노부유키 ,  오타도모히로 ,  가와노유미코 ,  가이즈카다케시 ,  진노우치신페이

IPC: H01L21/768

CPC classification number: H01L21/02068 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877

Abstract: An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

Abstract translation: 在半导体衬底上提供绝缘层，在绝缘层中形成接触孔，并且在包括接触孔的内壁的基板的整个表面上设置下层金属膜。 底层金属膜的表面状态通过氢等离子体处理来调整。 通过氢等离子体处理，底层金属膜的表面被氢化并被溅射蚀刻，从而去除吸附在底层金属膜表面上的无序膜和污染物。 接着，使用DMAH等有机铝化合物，通过化学气相沉积法，在下层金属膜上堆积铝。 接触孔可以有效地填充铝。