-
11.发明授权Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법 有权P형전극과활성층층층층확GaN GaN GaN GaN GaN GaN GaN GaN면발광발광저저드드드드드및및및및및및
公开(公告)号：KR100374796B1
公开(公告)日：2003-03-03
申请号：KR1020010005065
申请日：2001-02-02
Applicant: 삼성전기주식회사
CPC classification number: B82Y20/00 , H01S5/0207 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18388 , H01S5/18394 , H01S5/34333
Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on opposite sides of the active layer; a first distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second BDR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.
Abstract translation: 提供了一种GaN系列表面发射激光二极管及其制造方法。 GaN系列表面发射激光二极管包括：有源层; 在有源层的相对侧上的p型和n型材料层; 形成在n型材料层上的第一分布式布拉格反射器（DBR）层; 通过n型材料层连接到有源层的n型电极，使得电压被施加到有源层用于激光发射; 形成在所述p型材料层上的隔离物，所述隔离物在与所述第一DBR层对齐的部分中具有激光输出窗口，所述隔离物足够厚以使空穴能够有效地迁移到所述有源层的中心部分; 在激光输出窗口上形成的第二BDR层; 以及通过p型材料层连接到有源层的p型电极，使得电压施加到有源层用于激光发射。 激光输出窗口被成形为使得由间隔物的形成引起的激光束的衍射可以被补偿。 ＆lt;图像＆GT;
-
12.发明公开Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법 有权用于在P型电极和活性层之间有效扩散孔的包含间隔器的表面发射元件及其制造方法
公开(公告)号：KR1020020064521A
公开(公告)日：2002-08-09
申请号：KR1020010005065
申请日：2001-02-02
Applicant: 삼성전기주식회사
CPC classification number: B82Y20/00 , H01S5/0207 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18388 , H01S5/18394 , H01S5/34333
Abstract: PURPOSE: A GaN surface emitting LD(Laser Diode) is provided to secure a stable light mode by an effective hole diffusion to a center portion of a laser emission window. CONSTITUTION: A GaN surface LD comprises an active layer(40), a p-type and an n-type material layers(m1,m2) fronting each other using the active layer(40) as a center portion, a first Bragg reflective layer(49) formed on the rear surface of the n-type material layer(m2), n-type electrodes(47) capable of supplying a voltage for the active layer(40) through the n-type material layer(m2), a spacer(48) having a laser emission window(48b) on the p-type material layer(m1) corresponding to the first Bragg reflective layer(49), a second Bragg reflective layer(52) formed on the laser emission window(48b) and p-type electrodes(50) capable of supplying a voltage for the active layer(40) through the p-type material layer(m1).
Abstract translation: 目的：提供GaN表面发射LD（激光二极管），以通过有效的孔扩散到激光发射窗的中心部分来确保稳定的光模式。 构成：GaN表面LD包括有源层（40），使用有源层（40）作为中心部分彼此相对的p型和n型材料层（m1，m2），第一布拉格反射层 形成在n型材料层（m2）的后表面上的n型电极（47），能够通过n型材料层（m2）供给有源层（40）的电压的n型电极（47） 在与第一布拉格反射层（49）对应的p型材料层（m1）上具有激光发射窗（48b）的间隔物（48），形成在激光发射窗口（48b）上的第二布拉格反射层 以及能够通过p型材料层（m1）向活性层（40）供给电压的p型电极（50）。
-
Search Results
12
records
(took 0.02 seconds)
