公开(公告)号：KR1020070002863A

公开(公告)日：2007-01-05

申请号：KR1020050058557

申请日：2005-06-30

Applicant: 삼성전자주식회사

Inventor： 강대림

IPC: H01L21/76

CPC classification number: H01L29/0638

Abstract: A semiconductor device and a manufacturing method thereof are provided to prevent the increase of leakage current due to the field inversion by using a field inversion preventing layer. A plurality of active regions are formed on a semiconductor substrate. A field region(140) made of field oxide is formed on the resultant structure to insulate the active regions from each other. A field inversion preventing layer(148) is formed on a portion of the field region. A field gate poly(150) is formed on the active regions and the field inversion preventing layer. The field inversion preventing layer is formed like a rectangle type structure or an oval type structure.

Abstract translation: 提供一种半导体器件及其制造方法，以防止通过使用场反转防止层由于场反转引起的漏电流的增加。 在半导体衬底上形成多个有源区。 在所得结构上形成由场氧化物形成的场区（140），以使活性区彼此绝缘。 在场区域的一部分上形成有场反转防止层（148）。 在有源区域和场反转防止层上形成场门聚（150）。 防反射层形成为矩形结构或椭圆型结构。