Abstract:
PURPOSE: A method for manufacturing a silicon quantum dot thin film containing silicon molecule cluster is provided to obtain the silicon quantum dot thin film by applying partially oxidized silicon quantum dot on a substrate and thermally processing the silicon quantum dot. CONSTITUTION: Silicon nanoparticles are dissolved in an organic solvent. Alkyl group caps the silicon nanoparticles. The organic solvent is an ether-based solvent or tetrahydrofuran. A silicon nanoparticles solution is applied on a silicon substrate. A thermal process is implemented under a vacuum condition to obtain a silicon quantum dot thin film with silicon molecule cluster. The concentration of the silicon nanoparticles solution is between 1 and 20 weight%.
Abstract:
본 발명은 졸-겔(sol-gel)법을 이용하여 밴드갭 에너지(band gap energy)가 조절 가능하며 나노 크기의 미세 기공이 형성된 TiO 2 -ZrO 2 하이브리드(hybrid) 박막을 제조하는 방법에 관한 것으로, 상세하게 본 발명의 제조방법은 지르코늄 전구체 100 중량부에 대하여 상기 지르코늄 전구체의 활성도를 낮추는 안정화제 15 내지 25 중량부, 알콜 70 내지 90 중량부 및 티타늄 전구체 60 내지 100 중량부을 혼합하여 혼합용액을 제조하는 단계; (b) 상기 혼합용액에 지르코늄 전구체 100 중량부에 대하여 산 20 내지 30 중량부 및 10 내지 20 중량%의 유기고분자 알콜용액 250 내지 400 중량부를 첨가하여 지르코늄-티타늄 전구체 용액을 제조하는 단계; 및 (c) 상기 지르코늄-티타늄 전구체 용액을 기판위에 코팅한 후 건조 및 열처리하는 단계;를 포함하는 특징을 갖는다. 다공성 박막, 금속산화물, 고유전율, 밴드갭, 하이브리드 박막
Abstract:
본 발명은 유기실록산 단량체와 용매로서의 역할을 함께 할 수 있는 알킬치환된 방향족 탄화수소를 이용하여 전이금속 촉매 존재하 탈수소화 커플링 반응을 유도함으로써 제조되는 신규한 유기실록산 고분자에 관한 것이다. 또한, 본 발명은 단량체의 수를 최소화 하고 제조방법이 단순하며 저가 생산이 가능한 유기실록산 고분자의 제조방법에 관한 것이다.
Abstract:
본발명은유기실록산단량체와용매로서의역할을함께할 수있는알킬치환된방향족탄화수소를이용하여전이금속촉매존재하탈수소화커플링반응을유도함으로써제조되는신규한유기실록산고분자에관한것이다. 또한, 본발명은단량체의수를최소화하고제조방법이단순하며저가생산이가능한유기실록산고분자의제조방법에관한것이다.
Abstract:
PURPOSE: A method for manufacturing a silicon quantum dot thin film containing silicon molecule cluster is provided to obtain the silicon quantum dot thin film by applying partially oxidized silicon quantum dot on a substrate and thermally processing the silicon quantum dot. CONSTITUTION: Silicon nanoparticles are dissolved in an organic solvent. Alkyl group caps the silicon nanoparticles. The organic solvent is an ether-based solvent or tetrahydrofuran. A silicon nanoparticles solution is applied on a silicon substrate. A thermal process is implemented under a vacuum condition to obtain a silicon quantum dot thin film with silicon molecule cluster. The concentration of the silicon nanoparticles solution is between 1 and 20 weight%.
Abstract:
PURPOSE: A methylene-biphenyl-bridged silsesquioxane white LED encapsulant material is provided to obtain a silicon compound with excellent thermal stability, no yellowing, and high refractive index. CONSTITUTION: A method for preparing a methylene-biphenyl-bridged silsesquioxane white LED encapsulant material comprise the steps of: mixing a methylene-biphenyl-bridged compound of chemical formula 3, an organic solvent and a hydrochloric acid solution; and polymerizing the mixture to prepare the methylene-biphenyl-bridged silsesquioxane of chemical formula 1. In chemical formulas 1 and 3, R is -CH2-(C6H4)2-CH2-, R11 and R31~R36 are independently (C1-C4) alkyl group, and m is the integer of 2~1000.
Abstract:
The present invention relates to an organosiloxane polymer including fullerene of high refractive index capable of controlling refractive index, and to a manufacturing method thereof, and more specifically, to an organosiloxane polymer which secures stability and can be produced at low cost because of a simple manufacturing cost by comprising fullerene and an organosiloxane monomer having excellent stability, and to a manufacturing method thereof. Also, a thin film manufactured from the organosiloxane polymer controls refractive index according to heat treatment temperature conditions, and can be applied for an excellent material for an optoelectronic device demanding high stability.