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公开(公告)号：KR101133444B1
公开(公告)日：2012-04-09
申请号：KR1020100012580
申请日：2010-02-10
Applicant: 전남대학교산학협력단 , 조선대학교산학협력단
IPC: C01B33/021 , H01L33/04
Abstract: PURPOSE: A method for manufacturing a silicon quantum dot thin film containing silicon molecule cluster is provided to obtain the silicon quantum dot thin film by applying partially oxidized silicon quantum dot on a substrate and thermally processing the silicon quantum dot. CONSTITUTION: Silicon nanoparticles are dissolved in an organic solvent. Alkyl group caps the silicon nanoparticles. The organic solvent is an ether-based solvent or tetrahydrofuran. A silicon nanoparticles solution is applied on a silicon substrate. A thermal process is implemented under a vacuum condition to obtain a silicon quantum dot thin film with silicon molecule cluster. The concentration of the silicon nanoparticles solution is between 1 and 20 weight%.
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公开(公告)号：KR1020110092894A
公开(公告)日：2011-08-18
申请号：KR1020100012580
申请日：2010-02-10
Applicant: 전남대학교산학협력단 , 조선대학교산학협력단
IPC: C01B33/021 , H01L33/04
CPC classification number: H01L33/06 , H01L21/02282 , H01L21/324 , H01L29/122
Abstract: PURPOSE: A method for manufacturing a silicon quantum dot thin film containing silicon molecule cluster is provided to obtain the silicon quantum dot thin film by applying partially oxidized silicon quantum dot on a substrate and thermally processing the silicon quantum dot. CONSTITUTION: Silicon nanoparticles are dissolved in an organic solvent. Alkyl group caps the silicon nanoparticles. The organic solvent is an ether-based solvent or tetrahydrofuran. A silicon nanoparticles solution is applied on a silicon substrate. A thermal process is implemented under a vacuum condition to obtain a silicon quantum dot thin film with silicon molecule cluster. The concentration of the silicon nanoparticles solution is between 1 and 20 weight%.
Abstract translation: 目的：提供一种含有硅分子簇的硅量子点薄膜的制造方法，通过在基板上施加部分氧化的硅量子点并热处理硅量子点来获得硅量子点薄膜。 构成：将硅纳米颗粒溶解在有机溶剂中。 烷基封端硅纳米粒子。 有机溶剂是醚类溶剂或四氢呋喃。 将硅纳米颗粒溶液施加在硅衬底上。 在真空条件下进行热处理以获得具有硅分子簇的硅量子点薄膜。 硅纳米颗粒溶液的浓度为1至20重量％。
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公开(公告)号：KR1020160037091A
公开(公告)日：2016-04-05
申请号：KR1020150133844
申请日：2015-09-22
Applicant: 전남대학교산학협력단
IPC: C08G77/38 , C08G77/398 , C08K9/04 , C08K3/08 , C08L83/04
Abstract: 본발명은표면개질된실리콘양자점으로부터제조된실리콘수지를함유하는조성물및 이의제조방법에관한것으로, 본발명의조성물은표면개질된실리콘양자점을포함하여제조됨으로써투과율과굴절율이매우높다.
Abstract translation: 本发明涉及由表面改性硅量子点制造的含有硅树脂的组合物及其制造方法。 本发明的组合物通过包含表面改性的硅量子点制造，从而具有高的透射率和折射率。
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公开(公告)号：KR1020090054604A
公开(公告)日：2009-06-01
申请号：KR1020070121358
申请日：2007-11-27
Applicant: 전남대학교산학협력단
Inventor： 정현담
IPC: H01L21/208 , B82Y10/00
CPC classification number: H01L21/02282 , H01L21/02186 , H01L21/02189 , H01L21/02203
Abstract: A method for manufacturing a nano-porous TiO2-ZrO2 hybrid thin film is provided to obtain a complex metal oxide thin film of a single phase mixed with Ti and Zr atomically with uniform nano pore by controlling the band gap energy of the complex metal oxide thin film by controlling a mixing ratio of Ti precursor and Zr precursor. A mixture solution is made by mixing a stabilizer of 15 to 25 weight reducing the activity of a zirconium precursor, alcohol of 70 to 90 weight, and a titanium precursor of 60 to 100 weight with regard to the zirconium precursor of 100 weight. A zirconium-titanium precursor solution is made by adding the acid of 20 to 30 weight, an organic polymer of 10 to 20 weight, and the alcohol solution of 250 to 400 weight to the mixture solution with regard to the zirconium precursor of 100 weight. The zirconium-titanium precursor solution is coated on the substrate and is dried and heated.
Abstract translation: 提供一种制造纳米多孔TiO 2 -ZrO 2混合薄膜的方法，通过控制复合金属氧化物薄带的带隙能来获得具有均匀纳米孔的与Ti和Zr原子相混合的单相的复合金属氧化物薄膜 通过控制Ti前体和Zr前体的混合比来制备薄膜。 通过混合15至25重量份的稳定剂，相对于100重量份的锆前体，将锆前体，70至90重量％的醇和60至100重量％的钛前体相混合来制备混合溶液。 通过将20-30重量％的酸，10-20重量％的有机聚合物和250-400重量％的醇溶液相对于100重量的锆前体加入到混合溶液中来制备锆钛前体溶液。 将锆钛前体溶液涂布在基材上并干燥并加热。
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公开(公告)号：KR101768439B1
公开(公告)日：2017-08-17
申请号：KR1020150133844
申请日：2015-09-22
Applicant: 전남대학교산학협력단
IPC: C08G77/38 , C08G77/398 , C08K9/04 , C08K3/08 , C08L83/04
Abstract: 본발명은표면개질된실리콘양자점으로부터제조된실리콘수지를함유하는조성물및 이의제조방법에관한것으로, 본발명의조성물은표면개질된실리콘양자점을포함하여제조됨으로써투과율과굴절율이매우높다.
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Patent Agency Ranking
公开(公告)号：KR101709660B1
公开(公告)日：2017-02-23
申请号：KR1020150016505
申请日：2015-02-03
Applicant: 한국원자력연구원 , 전남대학교산학협력단
IPC: C01B33/021
Abstract: 본발명은방사선조사환원반응을이용한실리콘나노결정체의합성방법에관한것으로, 보다구체적으로는용매에실리콘전구체를분산시키고, 상기분산용액에 2차알코올을첨가하여반응시킨후 상기반응물에방사선을조사함으로써실리콘나노결정체를합성하는방법에관한것이다. 본발명의방사선조사환원반응을이용한실리콘나노결정체합성방법은특수한반응조건이필요없는상온ㆍ상압하에부가적인화학적환원제를사용하지않는친환경공정으로써연속적합성을통한대량생산이가능하므로실리콘나노결정체합성방법으로유용하게이용할수 있다.
Abstract translation: 本发明涉及使用电子束还原反应的硅纳米晶体的合成方法。 更具体地，本发明涉及一种通过将硅前体分散在溶剂中以获得分散溶液来合成硅纳米晶体的方法，向分散溶液中加入仲醇，引起反应获得反应产物，并照射反应 产品。 根据本发明，使用电子束还原反应的硅纳米晶体的合成方法是环境友好的方法，其在室温和常压下不使用额外的化学还原剂，而不需要特殊的反应条件。 因此，可以通过连续合成工艺大量生产硅纳米晶体，因此该工艺可以实际用作硅纳米晶体的合成方法。
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公开(公告)号：KR1020110092822A
公开(公告)日：2011-08-18
申请号：KR1020100012469
申请日：2010-02-10
Applicant: 전남대학교산학협력단
CPC classification number: B05D5/06 , B05D1/005 , B05D1/38 , B05D2203/30 , C09D129/08
Abstract: PURPOSE: A method for fabricating an ultralow refractive silica film is provided to obtain the uniform and homogenized silica film having high porosity using simple spin coating and to prevent the formation of cracks or porous channels. CONSTITUTION: A method for fabricating an ultralow refractive silica film comprises the steps of: preparing styrene-based copolymerization nanoparticles by polymerizing a styrene monomer and a hydrophilic monomer having a hydrophilic functional group through an emulsion polymerization method; applying an aqueous dispersion of the styrene-based copolymerization nanoparticles to a substrate surface-modified to be hydrophilic using spin-coating and applying ultrasonic waves to the coated film in order to form a porous polymer film on which the styrene-based copolymerization nanoparticles is laminated; applying and deopositing a precursor solution including a silica precursor in the porous polymer film to form the composite film of a polymer-silica precursor; and heating the composite film and removing the porous polymer film to prepare the porous silica film.
Abstract translation: 目的：提供一种制造超低折射二氧化硅膜的方法，以使用简单的旋涂法获得具有高孔隙率的均匀均匀的二氧化硅膜，并防止形成裂缝或多孔通道。 构成：制造超低折射二氧化硅膜的方法包括以下步骤：通过乳液聚合法聚合苯乙烯单体和具有亲水官能团的亲水性单体来制备苯乙烯基共聚纳米颗粒; 将苯乙烯类共聚纳米粒子的水性分散体涂布在表面改性为亲水性的基材上，使用旋转涂布法和向涂膜施加超声波，以形成多层聚合物膜，苯乙烯基共聚纳米粒子层叠在该多孔聚合物膜上 ; 在多孔聚合物膜中涂覆包含二氧化硅前体的前体溶液并形成聚合物 - 二氧化硅前体的复合膜; 并加热复合膜并除去多孔聚合物膜以制备多孔二氧化硅膜。
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公开(公告)号：KR1020170062788A
公开(公告)日：2017-06-08
申请号：KR1020150168406
申请日：2015-11-30
Applicant: 광주과학기술원 , 전남대학교산학협력단
IPC: H01L29/78 , H01L29/778 , H01L29/417 , H01L29/66 , C07C15/24 , C07C15/28
Abstract: 인가되는전계에따라밴드갭을조절할수 있는밴드갭조절층이구비된전계효과트랜지스터가개시된다. 핀채널영역상에형성된밴드갭조절층은분자비계와분자회전자를포함한다. 분자비계와분자회전자가동일평면상에배치되는경우, π-공액결합의길이는최대화된다. 이를통해밴드갭의감소를유도할수 있다.
Abstract translation: 公开了一种具有能够根据所施加的电场来调整带隙的带隙调整层的场效应晶体管。 形成在鳍式沟道区上的带隙调整层包括分子支架和分子转子。 当分子支架和分子转子放置在同一平面上时，π共轭键的长度最大化。 这可能会导致带隙减小。
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公开(公告)号：KR101567824B1
公开(公告)日：2015-11-11
申请号：KR1020140130856
申请日：2014-09-30
Applicant: 전남대학교산학협력단
Abstract: 본발명은캡핑된인듐산화물나노입자, 이의제조방법및 이를이용한박막트랜지스터를제공하는것으로, 본발명의캡핑된인듐산화물나노입자는전하이동도가높고수분산이가능해용액공정의적용이매우용이하다.
Abstract translation: 本发明提供一种封端的氧化铟纳米粒子及其制造方法以及使用其的薄膜晶体管。 本发明的封端的氧化铟纳米粒子具有高的电荷转移能力，并且是水分散性的，因此高度适用于溶液工艺。
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公开(公告)号：KR1020110092895A
公开(公告)日：2011-08-18
申请号：KR1020100012581
申请日：2010-02-10
Applicant: 전남대학교산학협력단
IPC: C08J5/18 , C08G77/04 , H01L29/786
CPC classification number: C08J5/18 , C08G77/04 , H01L51/052
Abstract: PURPOSE: An OTFT device using a bridged silsesquioxane material is provided to form a gate insulator thin film and an organic thin film transistor using the bridged silsesquioxane material as a gate insulator with reduced surface energy, improved crystallinity, and decreased surface roughness. CONSTITUTION: A method for preparing an insulator thin film comprises the steps of: mixing the bridged siloxane material of chemical formula 3, the siloxane material of chemical formula 4, water(H2O), and hydrochloric acid solution; forming a bridged silsesquioxane polymer of chemical formula 1 by polymerizing the mixture at room temperature; applying the polymer composition to a substrate and curing the resultant. In chemical formulas 1, 3 and 4, R1 and R21 are selected from (C2-C6) alkylene, (C6-C12) arylene and (C1-C10) alkyl (C6-C12) arylene; and R2 ~R11 and R22~R32 are independently (C1-C6) alkyl; and m is the interger of 2~1000.
Abstract translation: 目的：提供使用桥接倍半硅氧烷材料的OTFT器件，以形成栅极绝缘体薄膜和使用桥连倍半硅氧烷材料作为具有降低的表面能，改进的结晶度和降低的表面粗糙度的栅极绝缘体的有机薄膜晶体管。 构成：制备绝缘体薄膜的方法包括以下步骤：将化学式3的桥接硅氧烷材料，化学式4的硅氧烷材料，水（H 2 O）和盐酸溶液混合; 通过在室温下聚合混合物形成化学式1的桥连倍半硅氧烷聚合物; 将聚合物组合物施加到基底上并固化所得物。 在化学式1,3和4中，R 1和R 21选自（C 2 -C 6）亚烷基，（C 6 -C 12）亚芳基和（C 1 -C 10）烷基（C 6 -C 12）亚芳基; R2〜R11和R22〜R32独立地为（C1-C6）烷基; m为2〜1000的整数。
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