公开(公告)号：KR1020130032151A

公开(公告)日：2013-04-01

申请号：KR1020110095882

申请日：2011-09-22

Applicant: 서울대학교산학협력단

Inventor： 윤진혁 ,  남이현 ,  민상렬

IPC: G11C29/00 ,  G11C16/06 ,  G11C16/02

CPC classification number: G11C29/56 ,  G11C2029/0401 ,  G11C2029/5602

Abstract: PURPOSE: A flash memory storage device capable of verifying reliability by using a bypass path, a system and a method for verifying the reliability of the flash memory storage device are provided to objectively verify the reliability of a completely developed result. CONSTITUTION: A controller(101) controls a flash memory chip. A first connector(102) is formed for a first path between the flash memory chip and the controller. A second connector(103) is formed for a second path between the controller and a test support system to test a flash memory storage device. The controller selectively activates the first path or the second path. [Reference numerals] (100) Flash memory storage device; (101) Controller; (104) Flash memory chip; (110) Test support system; (130) Host; (140) Host interface;

Abstract translation: 目的：提供一种能够通过使用旁路路径来验证可靠性的闪存存储装置，用于验证闪存存储装置的可靠性的系统和方法，以客观地验证完全展开结果的可靠性。 构成：控制器（101）控制闪存芯片。 为闪存芯片和控制器之间的第一路径形成第一连接器（102）。 第二连接器（103）形成用于控制器和测试支持系统之间的第二路径，以测试闪存存储设备。 控制器选择性地激活第一路径或第二路径。 （附图标记）（100）闪存存储装置; （101）控制器; （104）闪存芯片; （110）测试支持系统; （130）主持人 （140）主机接口;