公开(公告)号：KR1020090067553A

公开(公告)日：2009-06-25

申请号：KR1020070135247

申请日：2007-12-21

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  김성우 ,  박병재

IPC: H01L21/265

Abstract: A substrate surface composition incorporation apparatus using a neutral beam and a method thereof are provided to enhance performance of a next-generation semiconductor device by improving characteristics of an oxide layer applied to the next-generation semiconductor device. A substrate surface composition incorporation apparatus using a neutral beam and a method thereof includes an ion beam generating gas injector, an ion source unit, a grid assembly, a reflector, and a stage. The substrate surface composition incorporation apparatus is installed in the inside of a plasma generating chamber. The ion beam generating gas injector injects a gas for generating an ion beam. The ion source unit generates the ion beam having the polarity from the gas introduced through the ion beam generating gas injector. The grid assembly is installed at one end of the ion source unit. The reflector is formed to convert the ion beam to a neutral beam. The stage is formed to position a processing target substrate on a traveling path of the neutral beam. The neutral beam is incorporated with surface compositions generated from the processing target substrate in order to change characteristics of a processing layer of the processing target substrate.

Abstract translation: 提供使用中性光束的衬底表面组合物并入装置及其方法，以通过改善施加到下一代半导体器件的氧化物层的特性来提高下一代半导体器件的性能。 使用中性光束的基板表面组合物并入装置及其方法包括离子束产生气体注入器，离子源单元，栅格组件，反射器和台。 基板表面组合物结合装置安装在等离子体发生室的内部。 离子束产生气体注入器注入用于产生离子束的气体。 离子源单元从通过离子束发生气体注入器引入的气体产生具有极性的离子束。 电网组件安装在离子源单元的一端。 反射器被形成为将离子束转换成中性光束。 台阶形成为将处理目标基板定位在中性梁的行进路径上。 为了改变处理对象基板的处理层的特性，将中性光束与由处理对象基板生成的表面组成结合。