公开(公告)号：KR1020090103840A

公开(公告)日：2009-10-01

申请号：KR1020090026601

申请日：2009-03-27

Applicant: 성균관대학교산학협력단

Inventor： 남재도 ,  부용순 ,  이평찬 ,  김시은

IPC: H01L51/30 ,  H01L21/20 ,  H01L21/324

Abstract: PURPOSE: A silicon thin film forming method is provided to reduce the cost and simplify the process using the silicon organic compound. CONSTITUTION: The silicon thin film forming method comprises as follows. A composition for the thin film including the silicon organic compound is fabricated(S1). The composition for the thin film is applied on a substrate(S2). The composition for the thin film spreading on a substrate is heat-treated. The silicon organic compound is indicated as the chemical formula 1 or the chemical formula 2. In the chemical formula 1, R1 and R2 are the hydrocarbon radical of less than 20 carbon atoms. In the chemical formula 2, R3 and R4 are the hydrocarbon radical which has less than 20 carbon atoms. R5 is the hydrocarbon radical which has less than 5 carbon atoms.

Abstract translation: 目的：提供一种硅薄膜形成方法，以降低成本并简化使用硅有机化合物的工艺。 构成：硅薄膜形成方法如下。 制造包含硅有机化合物的薄膜组合物（S1）。 将薄膜的组合物施加在基板（S2）上。 对在基板上扩散的薄膜的组成进行热处理。 硅有机化合物表示为化学式1或化学式2.在化学式1中，R 1和R 2为少于20个碳原子的烃基。 在化学式2中，R 3和R 4是具有少于20个碳原子的烃基。 R5是具有少于5个碳原子的烃基。