公开(公告)号：KR101944636B1

公开(公告)日：2019-01-31

申请号：KR1020170182379

申请日：2017-12-28

Applicant: 대구가톨릭대학교산학협력단

Inventor： 박승환 ,  안도열

IPC: H01L33/04 ,  H01L33/12

公开(公告)号：KR101667925B1

公开(公告)日：2016-10-20

申请号：KR1020100059562

申请日：2010-06-23

Applicant: 엘지이노텍 주식회사

Inventor： 문용태 ,  이정식 ,  박중서 ,  권호기 ,  박승환

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/48

Abstract: 발광소자및 발광소자패키지에관한것으로, 제 1 도전형반도체층과, 제 1 도전형반도체층위에형성되는발광층과, 발광층위에형성되는제 2 도전형반도체층과, 발광층은양자우물층과양자장벽층을포함하고, 제 1 도전형반도체층또는제 2 도전형반도체층의면방향격자상수는양자장벽층의면방향격자상수보다크고양자우물층의면방향격자상수보다작은발광소자를제공한다.

公开(公告)号：KR101915212B1

公开(公告)日：2018-11-06

申请号：KR1020120016203

申请日：2012-02-17

Applicant: 엘지이노텍 주식회사

Inventor： 한대섭 ,  문용태 ,  박승환

IPC: H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/28 ,  H01L33/14 ,  H01L33/12

Abstract: 실시예에따른발광소자는제1 도전형반도체층과활성층및 제2 도전형반도체층을포함하는발광구조물; 및상기제1 도전형반도체층과활성층사이에위치하고, In을포함하는전자주입층;을포함하고, 상기활성층은우물층과장벽층이적어도한번교대로위치하고상기전자주입층은복수개의서브층을포함하며, 상기서브층의에너지밴드갭이상기우물층의에너지밴드갭보다넓다.

公开(公告)号：KR1020130096336A

公开(公告)日：2013-08-30

申请号：KR1020120016203

申请日：2012-02-17

Applicant: 엘지이노텍 주식회사

Inventor： 한대섭 ,  문용태 ,  박승환

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device is provided to improve light emitting efficiency by relieving the stress between a first conductive semiconductor layer and an active layer. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer (210), an active layer (230), and a second conductive semiconductor layer (240). An electron injection layer (220) is located between the first conductive semiconductor layer and the active layer and includes In. The active layer includes a well layer and a barrier layer which are alternately located. The electron injection layer includes multiple sub layers. An energy band gap of the sub layer is wider than an energy band gap of the well layer. The multiple sub layers include a sub well layer and a sub barrier layer which are alternately located.

Abstract translation: 目的：通过减轻第一导电半导体层和有源层之间的应力来提供发光器件以提高发光效率。 构成：发光结构包括第一导电半导体层（210），有源层（230）和第二导电半导体层（240）。 电子注入层（220）位于第一导电半导体层和有源层之间，并包括In。 活性层包括交替位置的阱层和势垒层。 电子注入层包括多个子层。 子层的能带隙比阱层的能带隙宽。 多个子层包括交替位置的子阱层和子阻挡层。

公开(公告)号：KR1020110128711A

公开(公告)日：2011-11-30

申请号：KR1020100059562

申请日：2010-06-23

Applicant: 엘지이노텍 주식회사

Inventor： 문용태 ,  이정식 ,  박중서 ,  권호기 ,  박승환

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/48

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/36 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device and a light emitting device package are provided to improve the self luminous efficiency of a quantum well layer by reducing compressive stress which is applied to a quantum-well layer in a light emitting layer. CONSTITUTION: A light emitting device comprises a first conductive semiconductor layer and a second conductive semiconductor layer(50). The light emitting layer is formed on the first conductive semiconductor layer. The second conductive semiconductor layer is formed on the light emitting layer. The light emitting layer includes a quantum well layer(33) and a quantum barrier layer(31). The face direction lattice constant of the first conductive semiconductor layer and the second conductive semiconductor layer is bigger than that of the quantum barrier layer and is smaller than that of the quantum well layer.

Abstract translation: 目的：提供发光器件和发光器件封装，以通过降低施加到发光层中的量子阱层的压缩应力来提高量子阱层的自发光效率。 构成：发光器件包括第一导电半导体层和第二导电半导体层（50）。 发光层形成在第一导电半导体层上。 第二导电半导体层形成在发光层上。 发光层包括量子阱层（33）和量子势垒层（31）。 第一导电半导体层和第二导电半导体层的面向晶格常数大于量子势垒层的面方向晶格常数，并且小于量子阱层的面方向晶格常数。