公开(公告)号：KR1020120111274A

公开(公告)日：2012-10-10

申请号：KR1020110029674

申请日：2011-03-31

Applicant: 재단법인대구경북과학기술원

Inventor： 장환수 ,  최호진 ,  백성호 ,  김재현

IPC: H01L21/306

CPC classification number: H01L21/30604

Abstract: PURPOSE: A manufacturing method of a silicon wire array by an electrochemical etching method is provided to prevent the contamination of a device by excluding anisotropic etching solution. CONSTITUTION: An etching mask is patterned on the surface of a silicon substrate. The surface of the silicon substrate is electrochemically etched. The electrochemical etching forms an etching area by applying an electric field having a first current density. The etching area includes micro openings. The etching area is etched by applying an electric field having a second current density higher than the first current density. [Reference numerals] (AA) Initial washing; (BB) Photolithography; (CC) BOE(natural oxide film removal); (DD) Al deposition; (EE) Electrochemical etching(first current density); (FF) Etching area; (GG) Micro opening; (HH) Electrochemical etching(second current density)

Abstract translation: 目的：提供通过电化学蚀刻方法制造硅线阵列的方法，以通过排除各向异性蚀刻溶液来防止器件的污染。 构成：在硅衬底的表面上刻蚀蚀刻掩模。 硅衬底的表面被电化学蚀刻。 电化学蚀刻通过施加具有第一电流密度的电场形成蚀刻区域。 蚀刻区域包括微孔。 通过施加具有高于第一电流密度的第二电流密度的电场来蚀刻蚀刻区域。 （附图标记）（AA）初次洗涤; （BB）光刻 （CC）京东方（天然氧化膜去除）; （DD）Al沉积; （EE）电化学蚀刻（第一电流密度）; （FF）蚀刻面积; （GG）微开口; （HH）电化学蚀刻（第二电流密度）

公开(公告)号：KR1020110070026A

公开(公告)日：2011-06-24

申请号：KR1020090126665

申请日：2009-12-18

Applicant: 재단법인대구경북과학기술원

Inventor： 장환수 ,  김재현 ,  우성호 ,  백성호 ,  최호진 ,  김성빈

IPC: H01L21/306

CPC classification number: H01L21/324 ,  H01L21/3065

Abstract: PURPOSE: A method for forming an etching hole for electrochemical etching is provided to form an etching hole of a reverse pyramid shape, thereby shortening the number of manufacturing processes. CONSTITUTION: A polystyrene particle(402) is regularly and periodically formed on a semiconductor substrate. The semiconductor substrate is processed by heat. The semiconductor substrate is etched by reactive ions with the polystyrene particle as an etching mask until an etching hole of a reverse pyramid shape is formed on the semiconductor substrate. The polystyrene particle is eliminated.

Abstract translation: 目的：提供一种用于形成用于电化学蚀刻的蚀刻孔的方法，以形成反锥形蚀刻孔，从而缩短了制造工艺的数量。 构成：在半导体衬底上规则地和周期地形成聚苯乙烯颗粒（402）。 半导体衬底被加热处理。 通过与聚苯乙烯粒子的反应离子蚀刻半导体衬底作为蚀刻掩模，直到在半导体衬底上形成反锥体形状的蚀刻孔。 消除聚苯乙烯颗粒。